NUMERICAL MODELLING OF CVD PROCESSES AND EQUIPMENT p. C2-3 C . WERNER DOI: https://doi.org/10.1051/jp4:1991201 AbstractPDF (2.992 MB)
THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN p. C2-19 C.R. KLEIJN DOI: https://doi.org/10.1051/jp4:1991202 AbstractPDF (1.480 MB)
ANGULAR DISTRIBUTION OF DESORBED MOLECULES p. C2-33 X.W. LI, B.Z. GUO, S.H. LIN and H. MA DOI: https://doi.org/10.1051/jp4:1991203 AbstractPDF (192.7 KB)
2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR p. C2-39 Y. WANG, C. CHAUSSAVOINE and F. TEYSSANDIER DOI: https://doi.org/10.1051/jp4:1991204 AbstractPDF (1.023 MB)
CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD p. C2-47 L.J. de LEGÉ and M. HENDRIKS DOI: https://doi.org/10.1051/jp4:1991205 AbstractPDF (266.6 KB)
MECHANISM OF STEP COVERAGE FORMATION OF SiO2 FILMS FROM TEOS AND EFFECTS OF GAS PHASE ADDITIVES STUDIED BY MICRO/MACROCAVITY METHOD p. C2-55 Y. EGASHIRA, T. SORITA, S. SHIGA, K. IKUTA and H. KOMIYAMA DOI: https://doi.org/10.1051/jp4:1991206 AbstractPDF (693.0 KB)
SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING p. C2-63 M. GUEYE, E. SCHEID, P. TAURINES, P. DUVERNEUIL, D. BIELLE-DASPET and J.P. COUDERC DOI: https://doi.org/10.1051/jp4:1991207 AbstractPDF (1.420 MB)
A NOVEL WAFER CAGE FOR BETTER UNIFORMITY OF PHOSPHORUS DOPED SILICON LAYERS : EXPERIMENTAL STUDY AND MODELLING p. C2-71 C. AZZARO, P. DUVERNEUIL and J.P. COUDERC DOI: https://doi.org/10.1051/jp4:1991208 AbstractPDF (1.067 MB)
AN UNDERSTANDING OF IN SITU BORON DOPED POLYSILICON FILMS BY CHARACTERIZATION AND SIMULATION p. C2-79 C. AZZARO, E. SCHEID, D. BIELLE-DASPET, P. DUVERNEUIL and P. BOUDRE DOI: https://doi.org/10.1051/jp4:1991209 AbstractPDF (236.5 KB)
GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K p. C2-87 L.-S. HONG, Y. SHIMOGAKI and H. KOMIYAMA DOI: https://doi.org/10.1051/jp4:1991210 AbstractPDF (647.8 KB)
THE REACTIVITY AND MOLECULAR SIZE OF FILM PRECURSORS DURING CHEMICAL VAPOR DEPOSITION OF WSix p. C2-95 Y. SHIMOGAKI, T. SAITO, F. TADOKORO and H. KOMIYAMA DOI: https://doi.org/10.1051/jp4:1991211 AbstractPDF (2.113 MB)
NUMERICAL MODEL OF A FLUIDIZED BED REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION-ESTIMATION OF CVD AND FINES FORMATION p. C2-103 T. KIMURA and T. KOJIMA DOI: https://doi.org/10.1051/jp4:1991212 AbstractPDF (364.3 KB)
TRANSPORT PHENOMENA AND REACTOR DESIGN FOR CHROMIUM CARBIDE DEPOSITION p. C2-111 M. PONS, M. SANCANDI and J.F. NOWAK DOI: https://doi.org/10.1051/jp4:1991213 AbstractPDF (682.5 KB)
AN EXPERIMENTAL KINETIC STUDY OF BORON NITRIDE CVD FROM BF3-NH3-Ar MIXTURES p. C2-119 S. PROUHET, A. GUETTE and F. LANGLAIS DOI: https://doi.org/10.1051/jp4:1991214 AbstractPDF (683.9 KB)
GAS FLOW SIMULATION OF CHEMICAL VAPOUR INFILTRATION IN A VERTICAL HOT-WALL REACTOR p. C2-127 M. SASAKI, A. OHKUBO and T. HIRAI DOI: https://doi.org/10.1051/jp4:1991215 AbstractPDF (910.8 KB)
ANALYSIS OF TRANSPORT PHENOMENA IN THE COATING OF FIBERS BY CVD p. C2-135 J.H. SCHOLTZ, J.E. GATICA, H.J. VILJOEN and V. HLAVACEK DOI: https://doi.org/10.1051/jp4:1991216 AbstractPDF (1.517 MB)
THE CHEMICAL VAPOUR IMPREGNATION OF POROUS SOLIDS. MODELLING OF THE CVI-PROCESS p. C2-143 E. FITZER, W. FRITZ and G. SCHOCH DOI: https://doi.org/10.1051/jp4:1991217 AbstractPDF (934.6 KB)
IN - SITU OPTICAL CHARACTERISATION OF CVD PROCESSES p. C2-153 W. RICHTER and P. KURPAS DOI: https://doi.org/10.1051/jp4:1991218 AbstractPDF (39.46 KB)
SOME INSIGHT INTO THE NATURE OF THE SURFACE CHEMICAL PROCESSES INVOLVED IN THE MOVPE GROWTH OF GaAs FROM ARSINE AND TRIMETHYL- OR TRIETHYL-GALLIUM p. C2-155 M.E. PEMBLE, D.S. BUHAENKO, H. PATEL, A. STAFFORD and A.G. TAYOR DOI: https://doi.org/10.1051/jp4:1991219 AbstractPDF (1.198 MB)
REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K p. C2-167 H. PATEL and M.E. PEMBLE DOI: https://doi.org/10.1051/jp4:1991220 AbstractPDF (701.7 KB)
EXPERIMENTAL STUDY AND NUMERICAL SIMULATION OF HYDRODYNAMICS AND HEAT TRANSFER IN A COLD-WALL CVD REACTOR p. C2-175 H. CHEHOUANI, B. ARMAS, C. COMBESCURE, S . BENET and S. BRUNET DOI: https://doi.org/10.1051/jp4:1991221 AbstractPDF (983.5 KB)
IN SITU ELLIPSOMETRY, A MEASUREMENT TECHNIQUE FOR DYNAMIC FILM CHARACTERIZATION AND PROCESS DEVELOPMENT p. C2-183 M. TAMME, R. KAMILLI, P. PADUSCHEK, P. MONTGOMERY and S. ILLSLEY DOI: https://doi.org/10.1051/jp4:1991222 AbstractPDF (17.63 KB)
ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY p. C2-185 P.A.C. GROENEN, J.G.A. HÖLSCHER and H.H. BRONGERSMA DOI: https://doi.org/10.1051/jp4:1991223 AbstractPDF (692.9 KB)
THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES p. C2-193 W. AHMED, J.S. FOORD, N.K. SINGH and R.D. PILKINGTON DOI: https://doi.org/10.1051/jp4:1991224 AbstractPDF (255.1 KB)
DEPOSITION OF CUBIC BORON MONOPHOSPHIDE FROM BBr3 AND PBr3 : A REACTION MECHANISM p. C2-201 E.M. KELDER, P.J. VAN DER PUT, J.G.M. BECHT and J. SCHOONMAN DOI: https://doi.org/10.1051/jp4:1991225 AbstractPDF (346.9 KB)
SYNTHESIS AND STRUCTURE OF NONSTOICHIOMETRIC δ-NbN1+y FILMS p. C2-209 E.V. SHALAEVA, M.V. KUZNETSOV, R.S. BARYSHEV and B.V. MITROFANOV DOI: https://doi.org/10.1051/jp4:1991226 AbstractPDF (1.491 MB)
NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES p. C2-217 H.B. de BREE, M.H. HAAFKENS, M.M. MICHORIUS and L.R. WOLFF DOI: https://doi.org/10.1051/jp4:1991227 AbstractPDF (1.092 MB)
INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE p. C2-225 A. FIGUERAS, R. RODRIGUEZ-CLEMENTE, S. GARELIK, J. SANTISO, B . ARMAS, C. COMBESCURE, A. MAZEL, Y. KIHN and J. SÉVELY DOI: https://doi.org/10.1051/jp4:1991228 AbstractPDF (1.357 MB)
A STUDY OF α-Fe2O3 ULTRAFINE PARTICLE FILMS p. C2-233 D. GUORUI, C. LIHUA, Y. BAILIANG and L. MINGDENG DOI: https://doi.org/10.1051/jp4:1991229 AbstractPDF (1.012 MB)
METALORGANIC CHEMICAL VAPOR DEPOSITION : EXAMPLES OF THE INFLUENCE OF PRECURSOR STRUCTURE ON FILM PROPERTIES p. C2-243 K.F. JENSEN, A. ANNAPRAGADA, K.L. HO, J.-S. HUH, S. PATNAIK and S. SALIM DOI: https://doi.org/10.1051/jp4:1991230 AbstractPDF (440.6 KB)
METALORGANIC PRECURSORS FOR SEMICONDUCTORS REQUIREMENTS AND RECENT DEVELOPMENTS p. C2-253 A.C . JONES DOI: https://doi.org/10.1051/jp4:1991231 AbstractPDF (342.0 KB)
LOW PRESSURE MOCVD OF COPPER BASED COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONS p. C2-263 R.D. PILKINGTON, P.A. JONES, W. AHMED, R.D. TOMLINSON, A. E. HILL, J. J. SMITH and R. NUTTALL DOI: https://doi.org/10.1051/jp4:1991232 AbstractPDF (303.9 KB)
NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION p. C2-271 J.A.T. NORMAN, B.A. MURATORE, P.N. DYER, D.A. ROBERTS and A.K. HOCHBERG DOI: https://doi.org/10.1051/jp4:1991233 AbstractPDF (1.033 MB)
THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER p. C2-279 B. LECOHIER, J.-M. PHILIPPOZ, B. CALPINI, T. STUMM and H. VAN DEN BERGH DOI: https://doi.org/10.1051/jp4:1991234 AbstractPDF (723.9 KB)
THERMODYNAMIC MODELING OF MOCVD OF THE SUPERCONDUCTING PHASE IN THE Bi-Sr-Ca-Cu-O SYSTEM : INFLUENCE OF METAL PRECURSOR AND OXYGEN SOURCE p. C2-287 A. HÅRSTA and J.-O. CARLSSON DOI: https://doi.org/10.1051/jp4:1991235 AbstractPDF (1.355 MB)
DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSOR p. C2-295 C.I.M.A. SPEE, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, A. MACKOR and H.A. MEINEMA DOI: https://doi.org/10.1051/jp4:1991236 AbstractPDF (1.333 MB)
LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TIN OXIDE THIN FILMS FROM AN ORGANOMETALLIC COMPOUND. APPLICATION TO GAS DETECTION p. C2-303 C. PIJOLAT, L. BRUNO and R. LALAUZE DOI: https://doi.org/10.1051/jp4:1991237 AbstractPDF (1.817 MB)
MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS p. C2-311 W. KERN, A. CHEN and N. SANDLER DOI: https://doi.org/10.1051/jp4:1991238 AbstractPDF (550.2 KB)
GROWTH KINETICS, CRYSTAL STRUCTURE, AND MORPHOLOGY OF OMVPE-GROWN HOMOEPITAXIAL CdTe p. C2-319 D.W. SNYDER, P.J. SIDES, E.I. KO and S. MAHAJAN DOI: https://doi.org/10.1051/jp4:1991239 AbstractPDF (735.2 KB)
COMPARATIVE STUDY OF GexCx-1 FILMS PREPARED BY MOCVD FROM TETRAETHYLGERMANIUM AND TETRAVINYLGERMANIUM p. C2-327 M'B. AMJOUD, A. REYNES, R. MORANCHO, P. MAZEROLLES and R. CARLES DOI: https://doi.org/10.1051/jp4:1991240 AbstractPDF (634.6 KB)
GENERATION OF THREE-DIMENSIONAL FREE-STANDING MICRO-OBJECTS BY LASER CHEMICAL PROCESSING p. C2-337 O. LEHMANN and M. STUKE DOI: https://doi.org/10.1051/jp4:1991241 AbstractPDF (1.133 MB)
PLASMAS : SOURCES OF EXCITED, DISSOCIATED AND IONIZED SPECIES. CONSEQUENCES FOR CHEMICAL VAPOR DEPOSITION (CVD) AND FOR SURFACE TREATMENT p. C2-343 A. GICQUEL and Y. CATHERINE DOI: https://doi.org/10.1051/jp4:1991242 AbstractPDF (2.860 MB)
SURFACE MECHANISMS IN THE UVCVD OF SiO2 FILMS p. C2-357 C. LICOPPE, C. MERIADEC, J. FLICSTEIN, Y.I. NISSIM, E. PETIT and J.M. MOISON DOI: https://doi.org/10.1051/jp4:1991243 AbstractPDF (293.0 KB)
PREPARATION OF SiC FILMS BY PHOTOCHEMICAL VAPOUR DEPOSITION USING A D2 LAMP p. C2-365 S. MOTOJIMA and S. MANO DOI: https://doi.org/10.1051/jp4:1991244 AbstractPDF (208.7 KB)
LASER INDUCED DIRECT WRITING OF ALUMINIUM p. C2-373 V. SHANOV, B. IVANOV and C. POPOV DOI: https://doi.org/10.1051/jp4:1991245 AbstractPDF (806.1 KB)
KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD p. C2-381 W. ZHANG, M. LELOGEAIS and M. DUCARROIR DOI: https://doi.org/10.1051/jp4:1991246 AbstractPDF (895.5 KB)
COPPER AND COPPER OXIDE THIN FILMS OBTAINED BY METALORGANIC MICROWAVE PLASMA CVD p. C2-389 B. WISNIEWSKI, J. DURAND and L. COT DOI: https://doi.org/10.1051/jp4:1991247 AbstractPDF (783.7 KB)
PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS p. C2-397 K.-T. RIE, J. WÖHLE and A. GEBAUER DOI: https://doi.org/10.1051/jp4:1991248 AbstractPDF (1.381 MB)
INFLUENCE OF EXCITATION FREQUENCY ON ORIENTED (10(-1)0) GROWTH OF ALUMINIUM NITRIDE THIN FILMS BY PECVD p. C2-405 N. AZEMA, J. DURAND, R. BERJOAN, J.L. BALLADORE and L. COT DOI: https://doi.org/10.1051/jp4:1991249 AbstractPDF (1.337 MB)
PLASMA DEPOSITION OF SILICON NITRIDE p. C2-413 C. FAKIH, R.S. BES, B. ARMAS and D. THENEGAL DOI: https://doi.org/10.1051/jp4:1991250 AbstractPDF (544.2 KB)
DOWNSTREAM MICROWAVE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION OF SiO2 USING O2/SiH4 AND N2O/SiH4 MIXTURES p. C2-421 H. DEL PUPPO, T. SINDZINGRE, L. PECCOUD and J. DESMAISON DOI: https://doi.org/10.1051/jp4:1991251 AbstractPDF (729.6 KB)
DEVELOPMENT OF A PLASMA JETTING FLUIDIZED BED REACTOR p. C2-429 T. KOJIMA, M. MATSUKATA, M. ARAO, M. NAKAMURA and Y. MITSUYOSHI DOI: https://doi.org/10.1051/jp4:1991252 AbstractPDF (540.1 KB)
PLANARIZED INTERMETAL DIELECTRIC DEPOSITED BY DECR CVD p. C2-437 A. TISSIER, J. KHALLAAYOUNE, A. GERODOLLE and B. HUIZING DOI: https://doi.org/10.1051/jp4:1991253 AbstractPDF (956.6 KB)
SAFETY AND ENVIRONMENTAL ASPECTS OF CVD p. C2-447 R.H. WALLING and R.H. MOSS DOI: https://doi.org/10.1051/jp4:1991254 AbstractPDF (29.43 KB)
CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY p. C2-449 M.L. HAMMOND DOI: https://doi.org/10.1051/jp4:1991255 AbstractPDF (300.9 KB)
USE OF THE HAZOP ANALYSIS FOR EVALUATION OF CVD REACTORS p. C2-459 W.W. CRAWFORD, J.R. ZUBER and W.R. KNOLLE DOI: https://doi.org/10.1051/jp4:1991256 AbstractPDF (337.2 KB)
CVD OF SiC IN LARGE COATING VESSELS p. C2-467 K. BRENNFLECK and H. REICH DOI: https://doi.org/10.1051/jp4:1991257 AbstractPDF (2.529 MB)
OPTIMUM PROCESS CONDITIONS FOR STABLE AND EFFECTIVE OPERATION OF A FLUIDIZED BED CVD REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION p. C2-475 T. KOJIMA and O. MORISAWA DOI: https://doi.org/10.1051/jp4:1991258 AbstractPDF (900.8 KB)
CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR p. C2-483 M. MATSUKATA, T. ODAGIRI and T. KOJIMA DOI: https://doi.org/10.1051/jp4:1991259 AbstractPDF (853.7 KB)
CHEMICAL VAPOUR INFILTRATION (CVI) OF SILICON CARBIDE FIBRE PREFORMS p. C2-491 R. LUNDBERG, L. PEJRYD and G. LÖÖF DOI: https://doi.org/10.1051/jp4:1991260 AbstractPDF (1.677 MB)
PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS p. C2-497 S. ICHIJO, K. TAMURA, T. TAKANO, A. NAKAO and T. HIRAHARA DOI: https://doi.org/10.1051/jp4:1991261 AbstractPDF (3.124 MB)
HIGH QUALITY OXIDES FOR LARGE AREA DISPLAYS p. C2-505 L.M. JOHNSON, M. SAUNDERS and D.B. MEAKIN DOI: https://doi.org/10.1051/jp4:1991262 AbstractPDF (15.81 KB)
CHEMICAL VAPOUR DEPOSITON - A REVIEW OF 25 YEARS EXPERIENCE p. C2-509 E. FITZER DOI: https://doi.org/10.1051/jp4:1991263 AbstractPDF (4.431 MB)
HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD p. C2-539 F. SCHMADERER, R. HUBER, H. OETZMANN and G. WAHL DOI: https://doi.org/10.1051/jp4:1991264 AbstractPDF (1.126 MB)
CVD COATING OF CERAMIC LAYERS ON CERAMIC CUTTING TOOL MATERIALS p. C2-549 R. PORAT DOI: https://doi.org/10.1051/jp4:1991265 AbstractPDF (840.7 KB)
GRAIN REFINEMENT OF CVD TiC LAYERS BY AlCl3, ZrCl4 AND BCl3 IMPURITIES p. C2-557 A. OSADA, M. DANZINGER, R. HAUBNER and B. LUX DOI: https://doi.org/10.1051/jp4:1991266 AbstractPDF (1.164 MB)
COMPOSITION OSCILLATIONS IN HARD MATERIAL LAYERS DEPOSITED FROM THE VAPOUR PHASE p. C2-563 K. BARTSCH, A. LEONHARDT and E. WOLF DOI: https://doi.org/10.1051/jp4:1991267 AbstractPDF (757.1 KB)
INFLUENCE OF CH4 AND Ar ON THE MORPHOLOGIES OF Al2O3 - CVD COATINGS p. C2-571 M. DANZINGER, J. PENG, R. HAUBNER and B. LUX DOI: https://doi.org/10.1051/jp4:1991268 AbstractPDF (1.333 MB)
INFLUENCE OF ETCHING THE TiC UNDERLAYER WITH CH4/AlCl3/H2 ON THE CVD FORMATION OF KAPPA-Al2O3 p. C2-579 M. DANZINGER, R. HAUBNER and B. LUX DOI: https://doi.org/10.1051/jp4:1991269 AbstractPDF (791.9 KB)
CHEMICAL VAPOUR DEPOSITION OF Al-CONTAINING TiC - AND Ti(O,C) - HARD COATINGS p. C2-587 D. SELBMANN, A. LEONHARDT and E. WOLF DOI: https://doi.org/10.1051/jp4:1991270 AbstractPDF (669.9 KB)
CHEMICAL VAPOR PRECIPITATION OF SUBMICRON TITANIUM NITRIDE POWDER p. C2-593 J.P. DEKKER, P.J. VAN DER PUT, R.R. NIEUWENHUIS, H.J. VERINGA and J. SCHOONMAN DOI: https://doi.org/10.1051/jp4:1991271 AbstractPDF (535.3 KB)
ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL p. C2-601 M. LELOGEAIS, M. DUCARROIR and R. BERJOAN DOI: https://doi.org/10.1051/jp4:1991272 AbstractPDF (787.3 KB)
THE EFFECTS OF METALLIC INTERLAYER FORMATION ON THE ADHESION PROPERTIES OF PACVD - TiN FILMS ON TOOL STEEL p. C2-609 S.B. KIM, C.B. IN, S.K. CHOI and S.S. CHUN DOI: https://doi.org/10.1051/jp4:1991273 AbstractPDF (564.7 KB)
DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE p. C2-617 J.G.M. BECHT, A. BATH, E. HENGST, P.J. VAN DER PUT and J. SCHOONMAN DOI: https://doi.org/10.1051/jp4:1991274 AbstractPDF (981.0 KB)
TITANOCENE-DICHLORIDE AS A METALORGANIC SOURCE FOR TITANIUM CARBIDE p. C2-625 J. SLIFIRSKI, G. HUCHET and F. TEYSSANDIER DOI: https://doi.org/10.1051/jp4:1991275 AbstractPDF (743.1 KB)
ON THE OPTIMIZATION OF THE MICROSTRUCTURE AND THE ADHERENCE OF TiC/TiN COATINGS DEPOSITED AT MODERATE TEMPERATURE FOR MILLING APPLICATIONS p. C2-633 B. DROUIN, L. VANDENBULCKE, J.P. PITON and R. HERBIN DOI: https://doi.org/10.1051/jp4:1991276 AbstractPDF (2.462 MB)
CORROSION OF CHEMICALLY VAPOUR DEPOSITED TITANIUM CARBIDE ON AN INERT SUBSTRATE p. C2-641 A. DELBLANC BAUER and J.-O. CARLSSON DOI: https://doi.org/10.1051/jp4:1991277 AbstractPDF (335.6 KB)
FABRICATION AND EVALUATION OF SiC/C FUNCTIONALLY GRADIENT MATERIAL p. C2-649 M. SASAKI and T. HIRAI DOI: https://doi.org/10.1051/jp4:1991278 AbstractPDF (1.337 MB)
PROTECTION AGAINST OXIDATION OF C/SiC COMPOSITES BY CHEMICAL VAPOUR DEPOSITION OF TITANIUM DIBORIDE : DEPOSITION KINETICS AND OXIDATION BEHAVIOUR OF FILMS PREPARED FROM TiCl4/BCl3/H2 MIXTURES p. C2-657 C. COURTOIS, J. DESMAISON and H. TAWIL DOI: https://doi.org/10.1051/jp4:1991279 AbstractPDF (981.2 KB)
CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM p. C2-665 B. ASPAR, B. ARMAS, C. COMBESCURE and D. THENEGAL DOI: https://doi.org/10.1051/jp4:1991280 AbstractPDF (683.2 KB)
NEW COMPOUNDS OBTAINED BY LPCVD IN THE B-C-N CHEMICAL SYSTEM p. C2-673 F. SAUGNAC, F. TEYSSANDIER and A. MARCHAND DOI: https://doi.org/10.1051/jp4:1991281 AbstractPDF (316.6 KB)
LPCVD SiC COATINGS ON UNIDIRECTIONAL CARBON FIBRE-YARNS : APPLICATION TO ALUMINIUM MATRIX COMPOSITES p. C2-681 M.H. VIDAL-SÉTIF and J.L. GÉRARD DOI: https://doi.org/10.1051/jp4:1991282 AbstractPDF (1.704 MB)
DEVELOPMENT OF HIGH DENSITY FIBER REINFORCED SILICON CARBIDE FCVI COMPOSITES p. C2-689 Y.G. ROMAN, D.P. STINTON and T.M. BESMANN DOI: https://doi.org/10.1051/jp4:1991283 AbstractPDF (766.0 KB)
THE CVD OF TiB2 PROTECTIVE COATING ON SiC MONOFILAMENT FIBRES p. C2-697 K.-L. CHOY and B. DERBY DOI: https://doi.org/10.1051/jp4:1991284 AbstractPDF (1.656 MB)
CHEMICAL VAPOR INFILTRATION OF 3D FIBROUS CARBON PREFORMS BY ZIRCONIUM CARBIDE p. C2-705 M. NADAL and F. TEYSSANDIER DOI: https://doi.org/10.1051/jp4:1991285 AbstractPDF (2.246 MB)
THE Ba-PROBLEM IN CVD-YBa2 Cu3 O7-[MATH] HTC SUPERCONDUCTORS p. C2-713 E. FITZER, H. OETZMANN, F. SCHMADERER and G. WAHL DOI: https://doi.org/10.1051/jp4:1991286 AbstractPDF (1.207 MB)
PREPARATION OF YBa2Cu3O7-x FILMS BY SPRAY PYROLYSIS p. C2-721 J. PENG, M. DANZINGER, R. HAUBNER and B. LUX DOI: https://doi.org/10.1051/jp4:1991287 AbstractPDF (936.6 KB)
GROWTH MECHANISM AND STRUCTURE PECULIARITIES OF TUNGSTEN-RHENIUM COATINGS p. C2-729 Y.V. LAKHOTKIN and R.V. KUKUSHKIN DOI: https://doi.org/10.1051/jp4:1991288 AbstractPDF (744.7 KB)
INFLUENCE OF GAS PHASE COMPOSITION ON THE FORMATION OF Ti-Si COATINGS ON NIOBIUM p. C2-735 M.S. TSIRLIN and S.U. RYBAKOV DOI: https://doi.org/10.1051/jp4:1991289 AbstractPDF (219.3 KB)
THE SELECTIVE EPITAXIAL GROWTH OF SILICON p. C2-745 M.R. GOULDING DOI: https://doi.org/10.1051/jp4:1991290 AbstractPDF (6.338 MB)
EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD p. C2-779 D.W. McNEILL, Y. LIANG, J.H. MONTGOMERY, H.S. GAMBLE and B.M. ARMSTRONG DOI: https://doi.org/10.1051/jp4:1991291 AbstractPDF (755.2 KB)
LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS p. C2-787 R. KIRCHER, M. FURUNO, J. MUROTA and S. ONO DOI: https://doi.org/10.1051/jp4:1991292 AbstractPDF (718.8 KB)
LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT p. C2-795 J. MUROTA, M. KATO, R. KIRCHER and S. ONO DOI: https://doi.org/10.1051/jp4:1991293 AbstractPDF (1.233 MB)
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD p. C2-803 J. MUROTA, M. SAKURABA, N. MIKOSHIBA and S. ONO DOI: https://doi.org/10.1051/jp4:1991294 AbstractPDF (631.8 KB)
UHV CHEMICAL VAPOUR DEPOSITION OF UNDOPED AND IN-SITU DOPED POLYSILICON FILMS p. C2-809 W. AHMED, R.D. PILKINGTON and D.B. MEAKIN DOI: https://doi.org/10.1051/jp4:1991295 AbstractPDF (308.0 KB)
CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES p. C2-817 M. SARRET, A. LIBA, O. BONNAUD, M. MOKHTARI and B. FORTIN DOI: https://doi.org/10.1051/jp4:1991296 AbstractPDF (209.1 KB)
GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD p. C2-823 F.H. RUDDELL, B.M. ARMSTRONG and H.S. GAMBLE DOI: https://doi.org/10.1051/jp4:1991297 AbstractPDF (715.8 KB)
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE p. C2-831 H. KANOH, O. SUGIURA, S. FUJIOKA, Y. ARAMAKI, T. HATTORI and M. MATSUMURA DOI: https://doi.org/10.1051/jp4:1991298 AbstractPDF (337.5 KB)
PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES p. C2-839 H. TREICHEL, R. BRAUN, Z. GABRIC, O. SPINDLER and A. GSCHWANDTNER DOI: https://doi.org/10.1051/jp4:1991299 AbstractPDF (2.682 MB)
REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS p. C2-847 S.E. ALEXANDROV and A.Y. KOVALGIN DOI: https://doi.org/10.1051/jp4:19912100 AbstractPDF (29.90 KB)
A STUDY ON THE THERMODYNAMICS AND KINETICS OF TUNGSTEN DEPOSITION BY WF6 AND GeH4 p. C2-849 C.A. VAN DER JEUGD, G.J. LEUSINK, G.C.A.M. JANSSEN and S. RADELAAR DOI: https://doi.org/10.1051/jp4:19912101 AbstractPDF (375.5 KB)
SELECTIVE R.T.L.P.C.V.D. OF TUNGSTEN BY SILANE REDUCTION ON PATTERNED PPQ/Si WAFERS p. C2-857 A. BOUTEVILLE, T. CHARRIER, J.C. REMY, J. PALLEAU and J. TORRES DOI: https://doi.org/10.1051/jp4:19912102 AbstractPDF (924.3 KB)
CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY p. C2-865 K.A. GESHEVA, V. ABROSIMOVA and G.D. BESHKOV DOI: https://doi.org/10.1051/jp4:19912103 AbstractPDF (581.7 KB)
PROCESSING OF WSi2 FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METAL p. C2-873 E. BLANQUET, N. THOMAS, P. SURYANARAYANA, C. VAHLAS, C. BERNARD and R. MADAR DOI: https://doi.org/10.1051/jp4:19912104 AbstractPDF (1.084 MB)
CVD OF COPPER USING CuCl AS PRECURSOR p. C2-881 C. LAMPE-ÖNNERUD, A. HÅRSTA and U. JANSSON DOI: https://doi.org/10.1051/jp4:19912105 AbstractPDF (2.323 MB)
CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON p. C2-889 H. DALLAPORTA, Z. HAMMADI, R. PIERRISNARD and A. CROS DOI: https://doi.org/10.1051/jp4:19912106 AbstractPDF (1.242 MB)
MICROENGINEERING - THE NEW APPLICATION OF CHEMICAL VAPOR DEPOSITION p. C2-897 P.B. GRABIEC and J.M. LYSKO DOI: https://doi.org/10.1051/jp4:19912107 AbstractPDF (394.9 KB)
MOCVD - THE ROUTE TO HIGH PERFORMANCE COMPOUND SEMICONDUCTOR OPTOELECTRONIC DEVICES p. C2-905 R.J.M. GRIFFITHS DOI: https://doi.org/10.1051/jp4:19912108 AbstractPDF (28.59 KB)
DIAMOND CHEMICAL VAPOUR DEPOSITION p. C2-907 P.K. BACHMANN, D. LEERS and D.U. WIECHERT DOI: https://doi.org/10.1051/jp4:19912109 AbstractPDF (1.078 MB)
EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS p. C2-915 C. JOHNSTON, C.F. AYRES and P.R. CHALKER DOI: https://doi.org/10.1051/jp4:19912110 AbstractPDF (1.100 MB)
INFLUENCE OF THE FILAMENT MATERIAL ON LOW-PRESSURE HOT-FILAMENT CVD DIAMOND DEPOSITION p. C2-923 S. OKOLI, R. HAUBNER and B. LUX DOI: https://doi.org/10.1051/jp4:19912111 AbstractPDF (2.767 MB)
HIGH TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS p. C2-931 C. JOHNSTON, A. CROSSLEY, A.M. JONES, P.R. CHALKER, F.L. CULLEN and I.M. BUCKLEY-GOLDER DOI: https://doi.org/10.1051/jp4:19912112 AbstractPDF (901.7 KB)
ELECTRON SIGNIFICANCE TO DIAMOND SYNTHESIS IN PLASMA ENHANCED CVD PROCESS p. C2-939 S.F. MITURA DOI: https://doi.org/10.1051/jp4:19912113 AbstractPDF (986.6 KB)
ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION (APMOCVD) FOR THE GROWTH OF ZnSe EPILAYERS ON (100)-GaAs SUBSTRATES USING DIETHYL-ZINC (DEZn) AND HYDROGEN SELENIDE (H2Se) p. C2-945 A. BOUMAZA, H.M. YATES, L. JAMES, I.A. PATTERSON, D.J. COLE-HAMILTON and J.O. WILLIAMS DOI: https://doi.org/10.1051/jp4:19912114 AbstractPDF (252.1 KB)
HETEROEPITAXIAL GROWTH OF TiO2, VO2, AND TiO2/VO2 MULTILAYERS BY MOCVD p. C2-953 H.L.M. CHANG, Y. GAO, J. GUO, C.M. FOSTER, H. YOU, T.J. ZHANG and D.J. LAM DOI: https://doi.org/10.1051/jp4:19912115 AbstractPDF (2.212 MB)
STUDIES OF In2O3 - Sn FILMS GROWN BY MOCVD p. C2-961 W. LUO, P. REN, C. TAN and Z. TAN DOI: https://doi.org/10.1051/jp4:19912116 AbstractPDF (20.51 KB)
Sb (P, As OR F) - DOPED SnO2 FILMS PREPARED BY MOCVD p. C2-962 W. LUO, C. TAN, P. REN and Z. TAN DOI: https://doi.org/10.1051/jp4:19912117 AbstractPDF (24.70 KB)
A STUDY OF GAS SENSING PROPERTIES OF OXIDE MULTILAYER THIN FILMS p. C2-963 D. GUORUI DOI: https://doi.org/10.1051/jp4:19912118 AbstractPDF (1.148 MB)