J. Phys. IV France 02 (1991) C2-183-C2-183
IN SITU ELLIPSOMETRY, A MEASUREMENT TECHNIQUE FOR DYNAMIC FILM CHARACTERIZATION AND PROCESS DEVELOPMENTM. TAMME, R. KAMILLI, P. PADUSCHEK, P. MONTGOMERY and S. ILLSLEY
PLASMOS GmbH, Prozesstechnik, Tegernseer Landstrasse 161, D-8000 Munich 90, Germany
In situ ellipsometry enables "on line" continuous monitoring of film development within the deposition chamber. Furthermore in situ ellipsometry not only provides thickness monitoring, but is an excellent tool for determining refractive index and absorption coefficients. Advantages and disadvantages of in situ ellipsometry are shown and compared with other techniques. Examples of transparent PECVD film growth are shown as well as an example of a-Si as a highly absorbing film.
© EDP Sciences 1991