| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-183 - C2-183 | |
| DOI | https://doi.org/10.1051/jp4:1991222 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-183-C2-183
DOI: 10.1051/jp4:1991222
PLASMOS GmbH, Prozesstechnik, Tegernseer Landstrasse 161, D-8000 Munich 90, Germany
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-183-C2-183
DOI: 10.1051/jp4:1991222
IN SITU ELLIPSOMETRY, A MEASUREMENT TECHNIQUE FOR DYNAMIC FILM CHARACTERIZATION AND PROCESS DEVELOPMENT
M. TAMME, R. KAMILLI, P. PADUSCHEK, P. MONTGOMERY and S. ILLSLEYPLASMOS GmbH, Prozesstechnik, Tegernseer Landstrasse 161, D-8000 Munich 90, Germany
Abstract
In situ ellipsometry enables "on line" continuous monitoring of film development within the deposition chamber. Furthermore in situ ellipsometry not only provides thickness monitoring, but is an excellent tool for determining refractive index and absorption coefficients. Advantages and disadvantages of in situ ellipsometry are shown and compared with other techniques. Examples of transparent PECVD film growth are shown as well as an example of a-Si as a highly absorbing film.
© EDP Sciences 1991