J. Phys. IV France 02 (1991) C2-839-C2-846
PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICESH. TREICHEL, R. BRAUN, Z. GABRIC, O. SPINDLER and A. GSCHWANDTNER
SIEMENS AG, Semiconductor Group, Process Engineering, Otto-Hahn-Ring 6, D-8000 München 83, Germany
A new planarizing passivation scheme has been developed. The passivation sequence consists of a planarized SiO2 (deposition/etch-back/deposition ; similar to that for the intermetal dielectric in-situ planarization) with a sandwich of PSG and low-stress/low-hydrogen silicon nitride on top. The different process steps, and properties of the deposited materials will be described (e.g. mechanical stress and hydrogen content).
© EDP Sciences 1991