J. Phys. IV France 02 (1991) C2-823-C2-830
GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVDF.H. RUDDELL, B.M. ARMSTRONG and H.S. GAMBLE
The Institute of Advanced Microelectronics, Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, IR-Belfast BT9 5AH, Northern Ireland
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon carbide layers on [MATH] and [MATH] silicon substrates. Silane/propane gas chemistry has been employed at growth temperatures less than 1000°C. The growth mechanism for SiC may be considered as carbonation of silane species adsorbed on the wafer surface. Sufficient propane is present in the gas ambient to allow complete carbonation, with the carbon concentration in the film saturating at 50%.
© EDP Sciences 1991