Journal de Physique IV

NUMERICAL MODELLING OF CVD PROCESSES AND EQUIPMENT p. C2-3

C . WERNER

DOI: https://doi.org/10.1051/jp4:1991201

THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN p. C2-19

C.R. KLEIJN

DOI: https://doi.org/10.1051/jp4:1991202

ANGULAR DISTRIBUTION OF DESORBED MOLECULES p. C2-33

X.W. LI, B.Z. GUO, S.H. LIN et H. MA

DOI: https://doi.org/10.1051/jp4:1991203

2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR p. C2-39

Y. WANG, C. CHAUSSAVOINE et F. TEYSSANDIER

DOI: https://doi.org/10.1051/jp4:1991204

CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD p. C2-47

L.J. de LEGÉ et M. HENDRIKS

DOI: https://doi.org/10.1051/jp4:1991205

MECHANISM OF STEP COVERAGE FORMATION OF SiO₂ FILMS FROM TEOS AND EFFECTS OF GAS PHASE ADDITIVES STUDIED BY MICRO/MACROCAVITY METHOD p. C2-55

Y. EGASHIRA, T. SORITA, S. SHIGA, K. IKUTA et H. KOMIYAMA

DOI: https://doi.org/10.1051/jp4:1991206

SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING p. C2-63

M. GUEYE, E. SCHEID, P. TAURINES, P. DUVERNEUIL, D. BIELLE-DASPET et J.P. COUDERC

DOI: https://doi.org/10.1051/jp4:1991207

A NOVEL WAFER CAGE FOR BETTER UNIFORMITY OF PHOSPHORUS DOPED SILICON LAYERS : EXPERIMENTAL STUDY AND MODELLING p. C2-71

C. AZZARO, P. DUVERNEUIL et J.P. COUDERC

DOI: https://doi.org/10.1051/jp4:1991208

AN UNDERSTANDING OF IN SITU BORON DOPED POLYSILICON FILMS BY CHARACTERIZATION AND SIMULATION p. C2-79

C. AZZARO, E. SCHEID, D. BIELLE-DASPET, P. DUVERNEUIL et P. BOUDRE

DOI: https://doi.org/10.1051/jp4:1991209

GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si₂H₆ AND C₂H₂ AT 873 K p. C2-87

L.-S. HONG, Y. SHIMOGAKI et H. KOMIYAMA

DOI: https://doi.org/10.1051/jp4:1991210

THE REACTIVITY AND MOLECULAR SIZE OF FILM PRECURSORS DURING CHEMICAL VAPOR DEPOSITION OF WSi_x p. C2-95

Y. SHIMOGAKI, T. SAITO, F. TADOKORO et H. KOMIYAMA

DOI: https://doi.org/10.1051/jp4:1991211

NUMERICAL MODEL OF A FLUIDIZED BED REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION-ESTIMATION OF CVD AND FINES FORMATION p. C2-103

T. KIMURA et T. KOJIMA

DOI: https://doi.org/10.1051/jp4:1991212

TRANSPORT PHENOMENA AND REACTOR DESIGN FOR CHROMIUM CARBIDE DEPOSITION p. C2-111

M. PONS, M. SANCANDI et J.F. NOWAK

DOI: https://doi.org/10.1051/jp4:1991213

AN EXPERIMENTAL KINETIC STUDY OF BORON NITRIDE CVD FROM BF₃-NH₃-Ar MIXTURES p. C2-119

S. PROUHET, A. GUETTE et F. LANGLAIS

DOI: https://doi.org/10.1051/jp4:1991214

GAS FLOW SIMULATION OF CHEMICAL VAPOUR INFILTRATION IN A VERTICAL HOT-WALL REACTOR p. C2-127

M. SASAKI, A. OHKUBO et T. HIRAI

DOI: https://doi.org/10.1051/jp4:1991215

ANALYSIS OF TRANSPORT PHENOMENA IN THE COATING OF FIBERS BY CVD p. C2-135

J.H. SCHOLTZ, J.E. GATICA, H.J. VILJOEN et V. HLAVACEK

DOI: https://doi.org/10.1051/jp4:1991216

THE CHEMICAL VAPOUR IMPREGNATION OF POROUS SOLIDS. MODELLING OF THE CVI-PROCESS p. C2-143

E. FITZER, W. FRITZ et G. SCHOCH

DOI: https://doi.org/10.1051/jp4:1991217

IN - SITU OPTICAL CHARACTERISATION OF CVD PROCESSES p. C2-153

W. RICHTER et P. KURPAS

DOI: https://doi.org/10.1051/jp4:1991218

SOME INSIGHT INTO THE NATURE OF THE SURFACE CHEMICAL PROCESSES INVOLVED IN THE MOVPE GROWTH OF GaAs FROM ARSINE AND TRIMETHYL- OR TRIETHYL-GALLIUM p. C2-155

M.E. PEMBLE, D.S. BUHAENKO, H. PATEL, A. STAFFORD et A.G. TAYOR

DOI: https://doi.org/10.1051/jp4:1991219

REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K p. C2-167

H. PATEL et M.E. PEMBLE

DOI: https://doi.org/10.1051/jp4:1991220

EXPERIMENTAL STUDY AND NUMERICAL SIMULATION OF HYDRODYNAMICS AND HEAT TRANSFER IN A COLD-WALL CVD REACTOR p. C2-175

H. CHEHOUANI, B. ARMAS, C. COMBESCURE, S . BENET et S. BRUNET

DOI: https://doi.org/10.1051/jp4:1991221

IN SITU ELLIPSOMETRY, A MEASUREMENT TECHNIQUE FOR DYNAMIC FILM CHARACTERIZATION AND PROCESS DEVELOPMENT p. C2-183

M. TAMME, R. KAMILLI, P. PADUSCHEK, P. MONTGOMERY et S. ILLSLEY

DOI: https://doi.org/10.1051/jp4:1991222

ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY p. C2-185

P.A.C. GROENEN, J.G.A. HÖLSCHER et H.H. BRONGERSMA

DOI: https://doi.org/10.1051/jp4:1991223

THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES p. C2-193

W. AHMED, J.S. FOORD, N.K. SINGH et R.D. PILKINGTON

DOI: https://doi.org/10.1051/jp4:1991224

DEPOSITION OF CUBIC BORON MONOPHOSPHIDE FROM BBr₃ AND PBr₃ : A REACTION MECHANISM p. C2-201

E.M. KELDER, P.J. VAN DER PUT, J.G.M. BECHT et J. SCHOONMAN

DOI: https://doi.org/10.1051/jp4:1991225

SYNTHESIS AND STRUCTURE OF NONSTOICHIOMETRIC δ-NbN_1+y FILMS p. C2-209

E.V. SHALAEVA, M.V. KUZNETSOV, R.S. BARYSHEV et B.V. MITROFANOV

DOI: https://doi.org/10.1051/jp4:1991226

NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES p. C2-217

H.B. de BREE, M.H. HAAFKENS, M.M. MICHORIUS et L.R. WOLFF

DOI: https://doi.org/10.1051/jp4:1991227

INFLUENCE OF H₂ PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE p. C2-225

A. FIGUERAS, R. RODRIGUEZ-CLEMENTE, S. GARELIK, J. SANTISO, B . ARMAS, C. COMBESCURE, A. MAZEL, Y. KIHN et J. SÉVELY

DOI: https://doi.org/10.1051/jp4:1991228

A STUDY OF α-Fe₂O₃ ULTRAFINE PARTICLE FILMS p. C2-233

D. GUORUI, C. LIHUA, Y. BAILIANG et L. MINGDENG

DOI: https://doi.org/10.1051/jp4:1991229

METALORGANIC CHEMICAL VAPOR DEPOSITION : EXAMPLES OF THE INFLUENCE OF PRECURSOR STRUCTURE ON FILM PROPERTIES p. C2-243

K.F. JENSEN, A. ANNAPRAGADA, K.L. HO, J.-S. HUH, S. PATNAIK et S. SALIM

DOI: https://doi.org/10.1051/jp4:1991230

METALORGANIC PRECURSORS FOR SEMICONDUCTORS REQUIREMENTS AND RECENT DEVELOPMENTS p. C2-253

A.C . JONES

DOI: https://doi.org/10.1051/jp4:1991231

LOW PRESSURE MOCVD OF COPPER BASED COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONS p. C2-263

R.D. PILKINGTON, P.A. JONES, W. AHMED, R.D. TOMLINSON, A. E. HILL, J. J. SMITH et R. NUTTALL

DOI: https://doi.org/10.1051/jp4:1991232

NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION p. C2-271

J.A.T. NORMAN, B.A. MURATORE, P.N. DYER, D.A. ROBERTS et A.K. HOCHBERG

DOI: https://doi.org/10.1051/jp4:1991233

THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER p. C2-279

B. LECOHIER, J.-M. PHILIPPOZ, B. CALPINI, T. STUMM et H. VAN DEN BERGH

DOI: https://doi.org/10.1051/jp4:1991234

THERMODYNAMIC MODELING OF MOCVD OF THE SUPERCONDUCTING PHASE IN THE Bi-Sr-Ca-Cu-O SYSTEM : INFLUENCE OF METAL PRECURSOR AND OXYGEN SOURCE p. C2-287

A. HÅRSTA et J.-O. CARLSSON

DOI: https://doi.org/10.1051/jp4:1991235

DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSOR p. C2-295

C.I.M.A. SPEE, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, A. MACKOR et H.A. MEINEMA

DOI: https://doi.org/10.1051/jp4:1991236

LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TIN OXIDE THIN FILMS FROM AN ORGANOMETALLIC COMPOUND. APPLICATION TO GAS DETECTION p. C2-303

C. PIJOLAT, L. BRUNO et R. LALAUZE

DOI: https://doi.org/10.1051/jp4:1991237

MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS p. C2-311

W. KERN, A. CHEN et N. SANDLER

DOI: https://doi.org/10.1051/jp4:1991238

GROWTH KINETICS, CRYSTAL STRUCTURE, AND MORPHOLOGY OF OMVPE-GROWN HOMOEPITAXIAL CdTe p. C2-319

D.W. SNYDER, P.J. SIDES, E.I. KO et S. MAHAJAN

DOI: https://doi.org/10.1051/jp4:1991239

COMPARATIVE STUDY OF Ge_xC_x-1 FILMS PREPARED BY MOCVD FROM TETRAETHYLGERMANIUM AND TETRAVINYLGERMANIUM p. C2-327

M'B. AMJOUD, A. REYNES, R. MORANCHO, P. MAZEROLLES et R. CARLES

DOI: https://doi.org/10.1051/jp4:1991240

GENERATION OF THREE-DIMENSIONAL FREE-STANDING MICRO-OBJECTS BY LASER CHEMICAL PROCESSING p. C2-337

O. LEHMANN et M. STUKE

DOI: https://doi.org/10.1051/jp4:1991241

PLASMAS : SOURCES OF EXCITED, DISSOCIATED AND IONIZED SPECIES. CONSEQUENCES FOR CHEMICAL VAPOR DEPOSITION (CVD) AND FOR SURFACE TREATMENT p. C2-343

A. GICQUEL et Y. CATHERINE

DOI: https://doi.org/10.1051/jp4:1991242

SURFACE MECHANISMS IN THE UVCVD OF SiO₂ FILMS p. C2-357

C. LICOPPE, C. MERIADEC, J. FLICSTEIN, Y.I. NISSIM, E. PETIT et J.M. MOISON

DOI: https://doi.org/10.1051/jp4:1991243

PREPARATION OF SiC FILMS BY PHOTOCHEMICAL VAPOUR DEPOSITION USING A D₂ LAMP p. C2-365

S. MOTOJIMA et S. MANO

DOI: https://doi.org/10.1051/jp4:1991244

LASER INDUCED DIRECT WRITING OF ALUMINIUM p. C2-373

V. SHANOV, B. IVANOV et C. POPOV

DOI: https://doi.org/10.1051/jp4:1991245

KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD p. C2-381

W. ZHANG, M. LELOGEAIS et M. DUCARROIR

DOI: https://doi.org/10.1051/jp4:1991246

COPPER AND COPPER OXIDE THIN FILMS OBTAINED BY METALORGANIC MICROWAVE PLASMA CVD p. C2-389

B. WISNIEWSKI, J. DURAND et L. COT

DOI: https://doi.org/10.1051/jp4:1991247

PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS p. C2-397

K.-T. RIE, J. WÖHLE et A. GEBAUER

DOI: https://doi.org/10.1051/jp4:1991248

INFLUENCE OF EXCITATION FREQUENCY ON ORIENTED (10(-1)0) GROWTH OF ALUMINIUM NITRIDE THIN FILMS BY PECVD p. C2-405

N. AZEMA, J. DURAND, R. BERJOAN, J.L. BALLADORE et L. COT

DOI: https://doi.org/10.1051/jp4:1991249

PLASMA DEPOSITION OF SILICON NITRIDE p. C2-413

C. FAKIH, R.S. BES, B. ARMAS et D. THENEGAL

DOI: https://doi.org/10.1051/jp4:1991250

DOWNSTREAM MICROWAVE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION OF SiO₂ USING O₂/SiH₄ AND N₂O/SiH₄ MIXTURES p. C2-421

H. DEL PUPPO, T. SINDZINGRE, L. PECCOUD et J. DESMAISON

DOI: https://doi.org/10.1051/jp4:1991251

DEVELOPMENT OF A PLASMA JETTING FLUIDIZED BED REACTOR p. C2-429

T. KOJIMA, M. MATSUKATA, M. ARAO, M. NAKAMURA et Y. MITSUYOSHI

DOI: https://doi.org/10.1051/jp4:1991252

PLANARIZED INTERMETAL DIELECTRIC DEPOSITED BY DECR CVD p. C2-437

A. TISSIER, J. KHALLAAYOUNE, A. GERODOLLE et B. HUIZING

DOI: https://doi.org/10.1051/jp4:1991253

SAFETY AND ENVIRONMENTAL ASPECTS OF CVD p. C2-447

R.H. WALLING et R.H. MOSS

DOI: https://doi.org/10.1051/jp4:1991254

CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY p. C2-449

M.L. HAMMOND

DOI: https://doi.org/10.1051/jp4:1991255

USE OF THE HAZOP ANALYSIS FOR EVALUATION OF CVD REACTORS p. C2-459

W.W. CRAWFORD, J.R. ZUBER et W.R. KNOLLE

DOI: https://doi.org/10.1051/jp4:1991256

CVD OF SiC IN LARGE COATING VESSELS p. C2-467

K. BRENNFLECK et H. REICH

DOI: https://doi.org/10.1051/jp4:1991257

OPTIMUM PROCESS CONDITIONS FOR STABLE AND EFFECTIVE OPERATION OF A FLUIDIZED BED CVD REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION p. C2-475

T. KOJIMA et O. MORISAWA

DOI: https://doi.org/10.1051/jp4:1991258

CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR p. C2-483

M. MATSUKATA, T. ODAGIRI et T. KOJIMA

DOI: https://doi.org/10.1051/jp4:1991259

CHEMICAL VAPOUR INFILTRATION (CVI) OF SILICON CARBIDE FIBRE PREFORMS p. C2-491

R. LUNDBERG, L. PEJRYD et G. LÖÖF

DOI: https://doi.org/10.1051/jp4:1991260

PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS p. C2-497

S. ICHIJO, K. TAMURA, T. TAKANO, A. NAKAO et T. HIRAHARA

DOI: https://doi.org/10.1051/jp4:1991261

HIGH QUALITY OXIDES FOR LARGE AREA DISPLAYS p. C2-505

L.M. JOHNSON, M. SAUNDERS et D.B. MEAKIN

DOI: https://doi.org/10.1051/jp4:1991262

CHEMICAL VAPOUR DEPOSITON - A REVIEW OF 25 YEARS EXPERIENCE p. C2-509

E. FITZER

DOI: https://doi.org/10.1051/jp4:1991263

HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD p. C2-539

F. SCHMADERER, R. HUBER, H. OETZMANN et G. WAHL

DOI: https://doi.org/10.1051/jp4:1991264

CVD COATING OF CERAMIC LAYERS ON CERAMIC CUTTING TOOL MATERIALS p. C2-549

R. PORAT

DOI: https://doi.org/10.1051/jp4:1991265

GRAIN REFINEMENT OF CVD TiC LAYERS BY AlCl₃, ZrCl₄ AND BCl₃ IMPURITIES p. C2-557

A. OSADA, M. DANZINGER, R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jp4:1991266

COMPOSITION OSCILLATIONS IN HARD MATERIAL LAYERS DEPOSITED FROM THE VAPOUR PHASE p. C2-563

K. BARTSCH, A. LEONHARDT et E. WOLF

DOI: https://doi.org/10.1051/jp4:1991267

INFLUENCE OF CH₄ AND Ar ON THE MORPHOLOGIES OF Al₂O₃ - CVD COATINGS p. C2-571

M. DANZINGER, J. PENG, R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jp4:1991268

INFLUENCE OF ETCHING THE TiC UNDERLAYER WITH CH₄/AlCl₃/H₂ ON THE CVD FORMATION OF KAPPA-Al₂O₃ p. C2-579

M. DANZINGER, R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jp4:1991269

CHEMICAL VAPOUR DEPOSITION OF Al-CONTAINING TiC - AND Ti(O,C) - HARD COATINGS p. C2-587

D. SELBMANN, A. LEONHARDT et E. WOLF

DOI: https://doi.org/10.1051/jp4:1991270

CHEMICAL VAPOR PRECIPITATION OF SUBMICRON TITANIUM NITRIDE POWDER p. C2-593

J.P. DEKKER, P.J. VAN DER PUT, R.R. NIEUWENHUIS, H.J. VERINGA et J. SCHOONMAN

DOI: https://doi.org/10.1051/jp4:1991271

ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL p. C2-601

M. LELOGEAIS, M. DUCARROIR et R. BERJOAN

DOI: https://doi.org/10.1051/jp4:1991272

THE EFFECTS OF METALLIC INTERLAYER FORMATION ON THE ADHESION PROPERTIES OF PACVD - TiN FILMS ON TOOL STEEL p. C2-609

S.B. KIM, C.B. IN, S.K. CHOI et S.S. CHUN

DOI: https://doi.org/10.1051/jp4:1991273

DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE p. C2-617

J.G.M. BECHT, A. BATH, E. HENGST, P.J. VAN DER PUT et J. SCHOONMAN

DOI: https://doi.org/10.1051/jp4:1991274

TITANOCENE-DICHLORIDE AS A METALORGANIC SOURCE FOR TITANIUM CARBIDE p. C2-625

J. SLIFIRSKI, G. HUCHET et F. TEYSSANDIER

DOI: https://doi.org/10.1051/jp4:1991275

ON THE OPTIMIZATION OF THE MICROSTRUCTURE AND THE ADHERENCE OF TiC/TiN COATINGS DEPOSITED AT MODERATE TEMPERATURE FOR MILLING APPLICATIONS p. C2-633

B. DROUIN, L. VANDENBULCKE, J.P. PITON et R. HERBIN

DOI: https://doi.org/10.1051/jp4:1991276

CORROSION OF CHEMICALLY VAPOUR DEPOSITED TITANIUM CARBIDE ON AN INERT SUBSTRATE p. C2-641

A. DELBLANC BAUER et J.-O. CARLSSON

DOI: https://doi.org/10.1051/jp4:1991277

FABRICATION AND EVALUATION OF SiC/C FUNCTIONALLY GRADIENT MATERIAL p. C2-649

M. SASAKI et T. HIRAI

DOI: https://doi.org/10.1051/jp4:1991278

PROTECTION AGAINST OXIDATION OF C/SiC COMPOSITES BY CHEMICAL VAPOUR DEPOSITION OF TITANIUM DIBORIDE : DEPOSITION KINETICS AND OXIDATION BEHAVIOUR OF FILMS PREPARED FROM TiCl₄/BCl₃/H₂ MIXTURES p. C2-657

C. COURTOIS, J. DESMAISON et H. TAWIL

DOI: https://doi.org/10.1051/jp4:1991279

CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM p. C2-665

B. ASPAR, B. ARMAS, C. COMBESCURE et D. THENEGAL

DOI: https://doi.org/10.1051/jp4:1991280

NEW COMPOUNDS OBTAINED BY LPCVD IN THE B-C-N CHEMICAL SYSTEM p. C2-673

F. SAUGNAC, F. TEYSSANDIER et A. MARCHAND

DOI: https://doi.org/10.1051/jp4:1991281

LPCVD SiC COATINGS ON UNIDIRECTIONAL CARBON FIBRE-YARNS : APPLICATION TO ALUMINIUM MATRIX COMPOSITES p. C2-681

M.H. VIDAL-SÉTIF et J.L. GÉRARD

DOI: https://doi.org/10.1051/jp4:1991282

DEVELOPMENT OF HIGH DENSITY FIBER REINFORCED SILICON CARBIDE FCVI COMPOSITES p. C2-689

Y.G. ROMAN, D.P. STINTON et T.M. BESMANN

DOI: https://doi.org/10.1051/jp4:1991283

THE CVD OF TiB₂ PROTECTIVE COATING ON SiC MONOFILAMENT FIBRES p. C2-697

K.-L. CHOY et B. DERBY

DOI: https://doi.org/10.1051/jp4:1991284

CHEMICAL VAPOR INFILTRATION OF 3D FIBROUS CARBON PREFORMS BY ZIRCONIUM CARBIDE p. C2-705

M. NADAL et F. TEYSSANDIER

DOI: https://doi.org/10.1051/jp4:1991285

THE Ba-PROBLEM IN CVD-YBa₂ Cu₃ O_7-[MATH] HT_C SUPERCONDUCTORS p. C2-713

E. FITZER, H. OETZMANN, F. SCHMADERER et G. WAHL

DOI: https://doi.org/10.1051/jp4:1991286

PREPARATION OF YBa₂Cu₃O_7-x FILMS BY SPRAY PYROLYSIS p. C2-721

J. PENG, M. DANZINGER, R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jp4:1991287

GROWTH MECHANISM AND STRUCTURE PECULIARITIES OF TUNGSTEN-RHENIUM COATINGS p. C2-729

Y.V. LAKHOTKIN et R.V. KUKUSHKIN

DOI: https://doi.org/10.1051/jp4:1991288

INFLUENCE OF GAS PHASE COMPOSITION ON THE FORMATION OF Ti-Si COATINGS ON NIOBIUM p. C2-735

M.S. TSIRLIN et S.U. RYBAKOV

DOI: https://doi.org/10.1051/jp4:1991289

THE SELECTIVE EPITAXIAL GROWTH OF SILICON p. C2-745

M.R. GOULDING

DOI: https://doi.org/10.1051/jp4:1991290

EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD p. C2-779

D.W. McNEILL, Y. LIANG, J.H. MONTGOMERY, H.S. GAMBLE et B.M. ARMSTRONG

DOI: https://doi.org/10.1051/jp4:1991291

LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS p. C2-787

R. KIRCHER, M. FURUNO, J. MUROTA et S. ONO

DOI: https://doi.org/10.1051/jp4:1991292

LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT p. C2-795

J. MUROTA, M. KATO, R. KIRCHER et S. ONO

DOI: https://doi.org/10.1051/jp4:1991293

CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD p. C2-803

J. MUROTA, M. SAKURABA, N. MIKOSHIBA et S. ONO

DOI: https://doi.org/10.1051/jp4:1991294

UHV CHEMICAL VAPOUR DEPOSITION OF UNDOPED AND IN-SITU DOPED POLYSILICON FILMS p. C2-809

W. AHMED, R.D. PILKINGTON et D.B. MEAKIN

DOI: https://doi.org/10.1051/jp4:1991295

CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES p. C2-817

M. SARRET, A. LIBA, O. BONNAUD, M. MOKHTARI et B. FORTIN

DOI: https://doi.org/10.1051/jp4:1991296

GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD p. C2-823

F.H. RUDDELL, B.M. ARMSTRONG et H.S. GAMBLE

DOI: https://doi.org/10.1051/jp4:1991297

LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE p. C2-831

H. KANOH, O. SUGIURA, S. FUJIOKA, Y. ARAMAKI, T. HATTORI et M. MATSUMURA

DOI: https://doi.org/10.1051/jp4:1991298

PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES p. C2-839

H. TREICHEL, R. BRAUN, Z. GABRIC, O. SPINDLER et A. GSCHWANDTNER

DOI: https://doi.org/10.1051/jp4:1991299

REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS p. C2-847

S.E. ALEXANDROV et A.Y. KOVALGIN

DOI: https://doi.org/10.1051/jp4:19912100

A STUDY ON THE THERMODYNAMICS AND KINETICS OF TUNGSTEN DEPOSITION BY WF₆ AND GeH₄ p. C2-849

C.A. VAN DER JEUGD, G.J. LEUSINK, G.C.A.M. JANSSEN et S. RADELAAR

DOI: https://doi.org/10.1051/jp4:19912101

SELECTIVE R.T.L.P.C.V.D. OF TUNGSTEN BY SILANE REDUCTION ON PATTERNED PPQ/Si WAFERS p. C2-857

A. BOUTEVILLE, T. CHARRIER, J.C. REMY, J. PALLEAU et J. TORRES

DOI: https://doi.org/10.1051/jp4:19912102

CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY p. C2-865

K.A. GESHEVA, V. ABROSIMOVA et G.D. BESHKOV

DOI: https://doi.org/10.1051/jp4:19912103

PROCESSING OF WSi₂ FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METAL p. C2-873

E. BLANQUET, N. THOMAS, P. SURYANARAYANA, C. VAHLAS, C. BERNARD et R. MADAR

DOI: https://doi.org/10.1051/jp4:19912104

CVD OF COPPER USING CuCl AS PRECURSOR p. C2-881

C. LAMPE-ÖNNERUD, A. HÅRSTA et U. JANSSON

DOI: https://doi.org/10.1051/jp4:19912105

CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON p. C2-889

H. DALLAPORTA, Z. HAMMADI, R. PIERRISNARD et A. CROS

DOI: https://doi.org/10.1051/jp4:19912106

MICROENGINEERING - THE NEW APPLICATION OF CHEMICAL VAPOR DEPOSITION p. C2-897

P.B. GRABIEC et J.M. LYSKO

DOI: https://doi.org/10.1051/jp4:19912107

MOCVD - THE ROUTE TO HIGH PERFORMANCE COMPOUND SEMICONDUCTOR OPTOELECTRONIC DEVICES p. C2-905

R.J.M. GRIFFITHS

DOI: https://doi.org/10.1051/jp4:19912108

DIAMOND CHEMICAL VAPOUR DEPOSITION p. C2-907

P.K. BACHMANN, D. LEERS et D.U. WIECHERT

DOI: https://doi.org/10.1051/jp4:19912109

EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS p. C2-915

C. JOHNSTON, C.F. AYRES et P.R. CHALKER

DOI: https://doi.org/10.1051/jp4:19912110

INFLUENCE OF THE FILAMENT MATERIAL ON LOW-PRESSURE HOT-FILAMENT CVD DIAMOND DEPOSITION p. C2-923

S. OKOLI, R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jp4:19912111

HIGH TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS p. C2-931

C. JOHNSTON, A. CROSSLEY, A.M. JONES, P.R. CHALKER, F.L. CULLEN et I.M. BUCKLEY-GOLDER

DOI: https://doi.org/10.1051/jp4:19912112

ELECTRON SIGNIFICANCE TO DIAMOND SYNTHESIS IN PLASMA ENHANCED CVD PROCESS p. C2-939

S.F. MITURA

DOI: https://doi.org/10.1051/jp4:19912113

ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION (APMOCVD) FOR THE GROWTH OF ZnSe EPILAYERS ON (100)-GaAs SUBSTRATES USING DIETHYL-ZINC (DEZn) AND HYDROGEN SELENIDE (H₂Se) p. C2-945

A. BOUMAZA, H.M. YATES, L. JAMES, I.A. PATTERSON, D.J. COLE-HAMILTON et J.O. WILLIAMS

DOI: https://doi.org/10.1051/jp4:19912114

HETEROEPITAXIAL GROWTH OF TiO₂, VO₂, AND TiO₂/VO₂ MULTILAYERS BY MOCVD p. C2-953

H.L.M. CHANG, Y. GAO, J. GUO, C.M. FOSTER, H. YOU, T.J. ZHANG et D.J. LAM

DOI: https://doi.org/10.1051/jp4:19912115

STUDIES OF In₂O₃ - Sn FILMS GROWN BY MOCVD p. C2-961

W. LUO, P. REN, C. TAN et Z. TAN

DOI: https://doi.org/10.1051/jp4:19912116

Sb (P, As OR F) - DOPED SnO₂ FILMS PREPARED BY MOCVD p. C2-962

W. LUO, C. TAN, P. REN et Z. TAN

DOI: https://doi.org/10.1051/jp4:19912117

A STUDY OF GAS SENSING PROPERTIES OF OXIDE MULTILAYER THIN FILMS p. C2-963

D. GUORUI

DOI: https://doi.org/10.1051/jp4:19912118

Le Journal de Physique IV

Volume 02 / Numéro C2 (Septembre 1991)

Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse