| Issue |
J. Phys. IV France
Volume 02, Number C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-365 - C2-371 | |
| DOI | https://doi.org/10.1051/jp4:1991244 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-365-C2-371
DOI: 10.1051/jp4:1991244
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501-11, Japan
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-365-C2-371
DOI: 10.1051/jp4:1991244
PREPARATION OF SiC FILMS BY PHOTOCHEMICAL VAPOUR DEPOSITION USING A D2 LAMP
S. MOTOJIMA and S. MANODepartment of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501-11, Japan
Abstract
SiC films have been prepared by photochemical vapour deposition using a D2 lamp from a gas mixture of CH3SiCl3+H2+Ar on a graphite plate. The deposition temperature of the SiC films of a single phase was lowered by irradiation with a D2 lamp by 50°C as compared to that without irradiation. Furthermore, the deposition rate was increased with irradiation by 1.2-2.8 times as compared to that without irradiation.
© EDP Sciences 1991