| Issue |
J. Phys. IV France
Volume 02, Number C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-253 - C2-261 | |
| DOI | https://doi.org/10.1051/jp4:1991231 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-253-C2-261
DOI: 10.1051/jp4:1991231
Epichem Limited, Power Road, Bromborough, Wirral, GB-Mersesydide L62 3QF, Great-Britain
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-253-C2-261
DOI: 10.1051/jp4:1991231
METALORGANIC PRECURSORS FOR SEMICONDUCTORS REQUIREMENTS AND RECENT DEVELOPMENTS
A.C . JONESEpichem Limited, Power Road, Bromborough, Wirral, GB-Mersesydide L62 3QF, Great-Britain
Abstract
Recent advances in the growth of III-V and II-VI semiconductor materials by MOVPE have been greatly facilitated by the development of new metalorganic precursors. The use of trimethylamine alane (AlH3 (NMe3) ) has allowed the growth of AlGaAs with greatly lowered carbon and oxygen levels, whilst adducts such as Me2ZnNEt3 have served to eliminate a formerly severe prereaction during growth of ZnSe and ZnS. A number of these recent developments are critically reviewed and possible growth mechanisms are discussed.
© EDP Sciences 1991