LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TIN OXIDE THIN FILMS FROM AN ORGANOMETALLIC COMPOUND. APPLICATION TO GAS DETECTION

C. PIJOLAT; L. BRUNO; R. LALAUZE

doi:doi:10.1051/jp4:1991237

Numéro		J. Phys. IV France Volume 02, Numéro C2, Septembre 1991 Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse


Page(s)		C2-303 - C2-310
DOI		https://doi.org/10.1051/jp4:1991237

Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-303-C2-310
DOI: 10.1051/jp4:1991237

LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TIN OXIDE THIN FILMS FROM AN ORGANOMETALLIC COMPOUND. APPLICATION TO GAS DETECTION

C. PIJOLAT, L. BRUNO and R. LALAUZE

École Nationale Supérieure des Mines de Saint-Etienne, Département de Chimie-Physique des Processus Industriels, 158 Cours Fauriel, F-42023 Saint-Etienne Cedex 2, France

Abstract
Tin dioxide SnO₂ is one of the most common materials used in the fabrication of semiconductor gas sensors The principle of such sensors is based upon the variations of conductivity induced by adsorption of various gases. A low pressure OMCVD apparatus has been developed in order to obtain tin dioxide thin films. Structural and electrical properties have been investigated by different techniques : S.E.M., X-ray diffraction and conductivity measurements in different atmospheres. A correlation is found between the deposition parameters and the electrical properties of CVD-SnO₂ thin films.