2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR

Y. WANG; C. CHAUSSAVOINE; F. TEYSSANDIER

doi:doi:10.1051/jp4:1991204

Issue		J. Phys. IV France Volume 02, Number C2, Septembre 1991 Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse


Page(s)		C2-39 - C2-46
DOI		https://doi.org/10.1051/jp4:1991204

Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-39-C2-46
DOI: 10.1051/jp4:1991204

2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR

Y. WANG, C. CHAUSSAVOINE and F. TEYSSANDIER

CNRS, Institut de Science et de Génie des Matériaux et Procédés, Université, Avenue de Villeneuve, F-66860 Perpignan cedex, France

Abstract
Numerical 2D modelling of silicon deposition in steady state conditions from a SiH₄-H₂ initial gas mixture is undertaken in an impinging jet configuration. Variable physical properties and dilute reactants in the carrier gas are assumed. The influence on both the deposition rate and the silicon deposition profile of transport phenomena and chemical reactions in the gas phase are studied. Homogeneous and heterogeneous reactions are considered with three chemical species resulting from silane dissociation in a H₂ carrier gas : SiH₄, SiH₂ and Si₂H₆. Comparison is made between calculations achieved under kinetic control or thermodynamic equilibrium.