| Issue |
J. Phys. IV France
Volume 02, Number C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-831 - C2-837 | |
| DOI | https://doi.org/10.1051/jp4:1991298 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-831-C2-837
DOI: 10.1051/jp4:1991298
1 Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan
2 Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tamazutumi, Setagaya-ku, Tokyo 158, Japan
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-831-C2-837
DOI: 10.1051/jp4:1991298
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE
H. KANOH1, O. SUGIURA1, S. FUJIOKA2, Y. ARAMAKI2, T. HATTORI2 and M. MATSUMURA11 Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan
2 Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tamazutumi, Setagaya-ku, Tokyo 158, Japan
Abstract
Low-temperature CVD method has been investigated for silicon-nitride films by using higher silanes and hydrazine aiming at thin-film transistor application. The deposition temperature has been reduced to as low as 350°C, i.e., by about 400°C lower than the typical temperature. Atomic N/Si ratio was more than 4/3, i.e., the film was stoichiometric SiN, and hydrogen content was as high as 20 atomic%. Breakdown field strength, specific resistivity and MIS interface state density were about 6MV/cm, 6x1015 Ωcm and 1x1011cm-2eV-1, respectively.
© EDP Sciences 1991