| Issue |
J. Phys. IV France
Volume 02, Number C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-217 - C2-224 | |
| DOI | https://doi.org/10.1051/jp4:1991227 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-217-C2-224
DOI: 10.1051/jp4:1991227
1 Intech Ceramics Xycarb, Zuiddijk 4 , NL-5705 CS Helmond, The Netherlands
2 Centre for Technical Ceramics, Eindhoven University of Technology, P.O. BOX 513, NL-5600 MB Eindhoven, The Netherlands
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-217-C2-224
DOI: 10.1051/jp4:1991227
NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES
H.B. de BREE1, M.H. HAAFKENS1, M.M. MICHORIUS1 and L.R. WOLFF21 Intech Ceramics Xycarb, Zuiddijk 4 , NL-5705 CS Helmond, The Netherlands
2 Centre for Technical Ceramics, Eindhoven University of Technology, P.O. BOX 513, NL-5600 MB Eindhoven, The Netherlands
Abstract
Morphology and preferential crystallographic orientation were studied in TiN CVD on graphite substrates. Three types of isostatically pressed graphite were used, both in as delivered and in purified condition. Using X-ray diffractometry and optical as well as scanning electron microscopy, the results were analyzed after various deposition times. Three deposition temperatures : 850, 900 and 950°C were used. Except for the deposition temperature, the process conditions were not varied. In an experiment where instead of TiCl4, H2 and N2 only TiCl4 and H2 were used as reactants, it was demonstrated that the deposition of TiN on graphite substrates is probably preceded by the formation of a monolayer of TiC.
© EDP Sciences 1991