| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-103 - C2-110 | |
| DOI | https://doi.org/10.1051/jp4:1991212 | |
J. Phys. IV France 02 (1991) C2-103-C2-110
DOI: 10.1051/jp4:1991212
NUMERICAL MODEL OF A FLUIDIZED BED REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION-ESTIMATION OF CVD AND FINES FORMATION
T. KIMURA and T. KOJIMADepartment of Industrial Chemistry, Seikei University, 3-3-1 Kichijojikita-machi, Musashino-shi, Tokyo 180, Japan
Abstract
A numerical model of a fluidized bed reactor was developed for estimating rates of CVD and fines formation in polycrystalline silicon production from monosilane. In the model, Kunii-Levenspiel fluidized bed model and reaction kinetics were combined. The model predicts both the homogeneous decomposition to give fine powder and the heterogeneous CVD on seed silicon particles. The relative and quantitative contributions of both reactions were elucidated in fluidized bed bubbling zone including both bubble and emulsion phases. The present model also predicts the effects of operational conditions on the rates. The numerical values were compared with experimental data by ourselves and Hsu et al. The results indicated that fines mainly form in the bubble phase.
© EDP Sciences 1991