J. Phys. IV France 02 (1991) C2-263-C2-269
LOW PRESSURE MOCVD OF COPPER BASED COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONSR.D. PILKINGTON1, P.A. JONES1, W. AHMED1, R.D. TOMLINSON1, A. E. HILL1, J. J. SMITH1 and R. NUTTALL2
1 Department of Electrical Engineering, University of Salford, GB-Salford M5 4WT, Great-Britain
2 Electro Gas Systems Ltd, Unit 8, Sidcup Road, Roundthorn Industrial Estate Wythenshawe, GB-Manchester M22 9PH, Great-Britain
In recent years copper based compounds such as copper indium diselenide (CuInSe2, CIS) have emerged as the most promising candidates for high efficiency stable solar cells. To date research has been centred around the standard thin film deposition techniques i.e. evaporation, sputtering and electroplating. While these techniques give good films it has proved difficult to gain reproducible results. The production of devices based on CIS thin films has now progressed to a point where, to achieve further advances in device efficiency, more research into alternative deposition techniques and the basic deposition parameters is required. The major problems encountered with the standard technique are poor step coverage and lack of control over the stoichiometry. A low pressure MOCVD reactor has been constructed to investigate the growth of thin film CIS and the factors affecting deposition. The considerations involved in the design of such a system are discussed. A detailed study of reactor parameters affecting low pressure MOCVD of copper, copper indium and copper indium diselenide is being carried out. Mass spectrometric analysis of the decomposition products has been undertaken and the growth mechanisms and kinetics involved in these deposition processes are king investigated.
© EDP Sciences 1991