J. Phys. IV France
Volume 02, Number C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-381 - C2-388|
J. Phys. IV France 02 (1991) C2-381-C2-388
KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVDW. ZHANG, M. LELOGEAIS and M. DUCARROIR
IMP-CNRS, Université de Perpignan, 52 avenue de Villeneuve, F-66860 Perpignan cedex, France
Silicon carbide deposition in an inductively coupled RF plasma reactor using tetramethysilane(TMS)/argon mixtures was carried out on steel substrates in a restricted range of experimental parameters. A kinetic approach in the pressure range of 0.7-2.4 kPa is made to correlate the deposition rate of silicon carbide with plasma parameters. A "global" or "effective" concept has been emphasized. The main contribution of TMS dissociation in the present pressure range is assumed to the excited Ar(ion and metastable atom)-TMS molecule reactions rather than the primary electron-TMS reactions. A simple analytical expression for deposition rate is deduced which provides a good fit with experiments.
© EDP Sciences 1991