J. Phys. IV France 02 (1991) C2-873-C2-880
PROCESSING OF WSi2 FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METALE. BLANQUET1, N. THOMAS1, P. SURYANARAYANA2, C. VAHLAS1, C. BERNARD1 and R. MADAR3
1 LTPTCM, ENSEEG, BP. 75, F-38402 Saint Martin d'Hères, France
2 SDA, CEERI, PILANI, 333031, India
3 LMGP, ENSPG, BP. 46, F-38402 Saint Martin d'Hères, France
An experimental investigation of WSi2 thin films by LPCVD from in situ elaborated metal chlorides is presented. The films composition and properties are studied as a function of input gas phase composition. Preliminary results show that WSi2 films can selectively grow on silicon. An attempt has been made to understand the results in terms of deposition conditions.
© EDP Sciences 1991