J. Phys. IV France 02 (1991) C2-279-C2-286
THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPERB. LECOHIER, J.-M. PHILIPPOZ, B. CALPINI, T. STUMM and H. VAN DEN BERGH
Laboratoire de Chimie Technique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Low pressure CVD of copper from its bis-hexafluoroacetylacetonate is studied on oxidized silicon substrates locally seeded with a 2.5 Å platinum prenucleation film. Copper is deposited selectively on top of the prenucleation layer from the gaseous metalorganic compound diluted in hydrogen. The selectivity, growth rate and resistivity of the copper deposit strongly depend on the presence of water vapor in the reagent gas mixture.
© EDP Sciences 1991