| Issue |
J. Phys. IV France
Volume 02, Number C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-839 - C2-846 | |
| DOI | https://doi.org/10.1051/jp4:1991299 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-839-C2-846
DOI: 10.1051/jp4:1991299
SIEMENS AG, Semiconductor Group, Process Engineering, Otto-Hahn-Ring 6, D-8000 München 83, Germany
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-839-C2-846
DOI: 10.1051/jp4:1991299
PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES
H. TREICHEL, R. BRAUN, Z. GABRIC, O. SPINDLER and A. GSCHWANDTNERSIEMENS AG, Semiconductor Group, Process Engineering, Otto-Hahn-Ring 6, D-8000 München 83, Germany
Abstract
A new planarizing passivation scheme has been developed. The passivation sequence consists of a planarized SiO2 (deposition/etch-back/deposition ; similar to that for the intermetal dielectric in-situ planarization) with a sandwich of PSG and low-stress/low-hydrogen silicon nitride on top. The different process steps, and properties of the deposited materials will be described (e.g. mechanical stress and hydrogen content).
© EDP Sciences 1991