J. Phys. IV France
Volume 02, Number C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-119 - C2-126|
J. Phys. IV France 02 (1991) C2-119-C2-126
AN EXPERIMENTAL KINETIC STUDY OF BORON NITRIDE CVD FROM BF3-NH3-Ar MIXTURESS. PROUHET, A. GUETTE and F. LANGLAIS
Laboratoire des Composites Thermostructuraux (UMR 47 - CNRS-SEP-UB1), 1-3, Avenue Léonard de Vinci, Europarc, F-33600 Pessac, France
A proper control of the CVD of boron nitride from the B-N-H-F-Ar system, as very thin films in electronic devices or ceramic composite materials, needs a thorough knowledge of the mechanisms of the process. A detailed kinetic study is presented, which provides evidenced a transition from chemical to mass transfer control, as a function of the deposition temperature, total pressure and total flow rate. On the basis of these results, a pressure temperature diagram is proposed, which defines the boundaries of both control domains for a number of compositions of the initial gaseous mixture. For these compositions, the stoichiometry of the boron nitride deposits is given, on the basis of EPMA analysis data. Under conditions of a chemically controlled process, activation energies and apparent reaction orders with respect to NH3 and BF3 are reported.
© EDP Sciences 1991