J. Phys. IV France 02 (1991) C2-657-C2-664
PROTECTION AGAINST OXIDATION OF C/SiC COMPOSITES BY CHEMICAL VAPOUR DEPOSITION OF TITANIUM DIBORIDE : DEPOSITION KINETICS AND OXIDATION BEHAVIOUR OF FILMS PREPARED FROM TiCl4/BCl3/H2 MIXTURESC. COURTOIS1, J. DESMAISON1 and H. TAWIL2
1 Laboratoire de Céramiques Nouvelles, URA CNRS 320, 123 avenue Albert Thomas, F-87060 Limoges cedex, France
2 S.E.P, F-33165 Saint Médard en Jalles cedex, France
TiB2 coatings were deposited by hydrogen reduction of TiCl4 and BCl3. The objective was to correlate process variables with thermodynamic equilibrium calculations, deposition kinetics, coating structure and properties. Particular emphasis was given to obtaining deposits having appropriate oxidation resistance to protect C/SiC composites. Films, obtained at moderate temperature (800°C), acted as self-healing external barriers below the microcracking temperature of the outer SiC coating used as primary oxygen protection.
© EDP Sciences 1991