Thermodynamic, kinetic and mass transport calculations, as the basis for materials processing by CVD p. Pr3-3 C. Bernard DOI: https://doi.org/10.1051/jp4:2001301 AbstractPDF (920.4 KB)
Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation : A powerful technique p. Pr3-17 J. Müller, B. Witting, H. Sternkicker and S. Bendix DOI: https://doi.org/10.1051/jp4:2001302 AbstractPDF (290.3 KB)
The growth kinetics study of CVD Cu on TiN barriers p. Pr3-23 W. Pan, D.R. Evans, R. Barrowcliff and S.T. Hsu DOI: https://doi.org/10.1051/jp4:2001303 AbstractPDF (937.0 KB)
The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors p. Pr3-31 R.F. Hicks, Q. Fu, L. Li, S.B. Visbeck, Y. Sun, C.H. Li and D.C. Law DOI: https://doi.org/10.1051/jp4:2001304 AbstractPDF (1.767 MB)
Thermodynamic and kinetic criteria to select hydrocarbon precursor p. Pr3-39 S. de Persis and F. Teyssandier DOI: https://doi.org/10.1051/jp4:2001305 AbstractPDF (1.170 MB)
A study of morphology and texture of LPCVD germanium-silicon films p. Pr3-47 A. Kovalgin and J. Holleman DOI: https://doi.org/10.1051/jp4:2001306 AbstractPDF (2.388 MB)
Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios p. Pr3-55 W.G. Zhang and K.J. Hüttinger DOI: https://doi.org/10.1051/jp4:2001307 AbstractPDF (647.9 KB)
Density functional study on the adsorption of DMAH on hydrogen terminated Si(111) surfaces p. Pr3-63 T. Matsuwaki, T. Nakajima and K. Yamashita DOI: https://doi.org/10.1051/jp4:2001308 AbstractPDF (1.905 MB)
(HFA)Cu . 1,5-COD as the prospective precursor for CVD-technologies : The electronic structure, thermodynamical properties and process of formation of thin copper films p. Pr3-69 T.I. Liskovskaya, L.G. Bulusheva, A.V. Okotrub, S.A. Krupoder, P.P. Semyannikov, I. P. Asanov, I.K. Igumenov, A.V. Manaev, V.F. Traven and A.G. Cherkov DOI: https://doi.org/10.1051/jp4:2001309 AbstractPDF (913.6 KB)
Elementary steps and application of the CVD of SiC/BN double layers p. Pr3-77 S. Hemeltjen, J. Heinrich, G. Marx, D. Dietrich, K. Nestler, K. Weise and S. Stöckel DOI: https://doi.org/10.1051/jp4:2001310 AbstractPDF (919.6 KB)
Thermodynamic and experimental study of low temperature ZrB2 chemical vapor deposition p. Pr3-85 J.F. Pierson, T. Belmonte and H. Michel DOI: https://doi.org/10.1051/jp4:2001311 AbstractPDF (366.7 KB)
MOCVD of lead-containing perovskites p. Pr3-93 A.A. Bosak, A.N. Botev, O.Yu. Gorbenko, I.E. Graboy, S.V. Samoilenkov, A.R. Kaul, C. Dubourdieu and J.-P. Sénateur DOI: https://doi.org/10.1051/jp4:2001312 AbstractPDF (338.0 KB)
Kinetic modelling of gas-phase decomposition of propane : Correlation with pyrocarbon deposition p. Pr3-101 B. Descamps, G.L. Vignoles, O. Féron, J. Lavenac and F. Langlais DOI: https://doi.org/10.1051/jp4:2001313 AbstractPDF (477.5 KB)
Transition and rare earth metal fluorides as thermal sources of atomic and molecular fluorine p. Pr3-109 J.V. Rau, N.S. Chilingarov, M.S. Leskiv, V.F. Sukhoverkhov, V. Rossi Albertini and L.N. Sidorov DOI: https://doi.org/10.1051/jp4:2001314 AbstractPDF (130.9 KB)
Multiscale approach to material synthesis by gas phase deposition p. Pr3-117 M. Masi DOI: https://doi.org/10.1051/jp4:2001315 AbstractPDF (677.1 KB)
Modelling of silica film growth by chemical vapour deposition : Influence of the interface properties p. Pr3-129 L. Vázquez, F. Ojeda, R. Cuerno, R. Salvarezza and J.M. Albella DOI: https://doi.org/10.1051/jp4:2001316 AbstractPDF (678.6 KB)
Kinetics of LPCVD of gallium nitride and oxynitride films based on pyrolysis of a gallium chloride complex with ammonia GaCl3NH3 p. Pr3-141 S.E. Alexandrov and V.A. Kriakin DOI: https://doi.org/10.1051/jp4:2001317 AbstractPDF (369.2 KB)
Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O3, TMB, TMPi : Determination of a chemical mechanism p. Pr3-149 J.-P. Nieto, B. Caussat, J.-P. Couderc, I. Orain and L. Jeannerot DOI: https://doi.org/10.1051/jp4:2001318 AbstractPDF (269.4 KB)
Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complex p. Pr3-155 S.E. Alexandrov and V.A. Chistiakov DOI: https://doi.org/10.1051/jp4:2001319 AbstractPDF (318.6 KB)
Two-dimensional simulation of a pulsed-power electronegative discharge p. Pr3-163 B. Ramamurthi and D.J. Economou DOI: https://doi.org/10.1051/jp4:2001320 AbstractPDF (402.9 KB)
Heat and mass transfer during producing silicon layers by chloride LPCVD process p. Pr3-171 V.G. Minkina DOI: https://doi.org/10.1051/jp4:2001321 AbstractPDF (236.9 KB)
Thermodynamic modelling of the chemical vapour deposition of boron nitride in the B-N-H-He-O system p. Pr3-177 A.N. Golubenko, M.L. Kosinova and F.A. Kuznetsov DOI: https://doi.org/10.1051/jp4:2001322 AbstractPDF (256.5 KB)
Computational analysis of horizontal cold wall CVD reactors at low pressure : Application to tungsten deposition from pyrolysis of W(CO)6 p. Pr3-183 T.C. Xenidou, M.K. Koukou, A.G. Boudouvis and N.C. Markatos DOI: https://doi.org/10.1051/jp4:2001323 AbstractPDF (634.3 KB)
Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane p. Pr3-189 L. Zambov, B. Caussat, R. Boubeker and J.-P. Couderc DOI: https://doi.org/10.1051/jp4:2001324 AbstractPDF (368.6 KB)
Computational design and analysis of MOVPE reactors p. Pr3-197 R.P. Pawlowski, A.G. Salinger, L.A. Romero and J.N. Shadid DOI: https://doi.org/10.1051/jp4:2001325 AbstractPDF (1001 KB)
A TCAD tool for the simulation of the CVD process based on cellular automata p. Pr3-205 G.Ch. Sirakoulis, I. Karafyllidis and A. Thanailakis DOI: https://doi.org/10.1051/jp4:2001326 AbstractPDF (1.560 MB)
Effect of the precursors on the deposition of (Ba, Sr)TIO3 films p. Pr3-215 J.-H. Lee, W.-Y. Yang, S.-W. Rhee and D. Kim DOI: https://doi.org/10.1051/jp4:2001327 AbstractPDF (730.5 KB)
Halide CVD of dielectric and ferroelectric oxides p. Pr3-223 A. Harsta DOI: https://doi.org/10.1051/jp4:2001328 AbstractPDF (1.549 MB)
Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures p. Pr3-231 V. Em. Vamvakas, R. Berjoan, S. Schamm, D. Davazoglou and C. Vahlas DOI: https://doi.org/10.1051/jp4:2001329 AbstractPDF (404.9 KB)
Low pressure chemical vapor deposition of CuxS p. Pr3-239 B. Meester, L. Reijnen, F. de Lange, A. Goossens and J. Schoonman DOI: https://doi.org/10.1051/jp4:2001330 AbstractPDF (344.8 KB)
Perovskite heterostructures grown by MOCVD p. Pr3-247 O.Yu. Gorbenko, I.E. Graboy, M.A. Novozhilov, A.R. Kaul, G. Wahl and V.L. Svetchnikov DOI: https://doi.org/10.1051/jp4:2001331 AbstractPDF (2.509 MB)
Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4 p. Pr3-255 Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota DOI: https://doi.org/10.1051/jp4:2001332 AbstractPDF (850.3 KB)
Organic chemistry by CVD p. Pr3-261 L. He, M.L. Hitchman, S.H. Shamlian and S.E. Alexandrov DOI: https://doi.org/10.1051/jp4:2001333 AbstractPDF (333.5 KB)
Molecular magnets and conductors on surfaces p. Pr3-271 H. Casellas, D. de Caro, L. Valade and L. Ariès DOI: https://doi.org/10.1051/jp4:2001334 AbstractPDF (590.3 KB)
Modification of activated carbon fiber pore structure by coke deposition p. Pr3-279 X. Dabou, P. Samaras and G.P. Sakellaropoulos DOI: https://doi.org/10.1051/jp4:2001335 AbstractPDF (775.7 KB)
Properties of thin AIN films prepared by PECVD and rapid thermal processes p. Pr3-287 G.D. Beshkov, S.S. Georgiev, K.G. Grigorov, H.S. Maciel, A. Djouadi and M. Marinov DOI: https://doi.org/10.1051/jp4:2001336 AbstractPDF (621.0 KB)
CVD growth of silicon films at high rates p. Pr3-293 M. Hofstätter, B. Atakan and K. Kohse-Höinghaus DOI: https://doi.org/10.1051/jp4:2001337 AbstractPDF (1.257 MB)
Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressure p. Pr3-301 A. Slaoui and S. Bourdais DOI: https://doi.org/10.1051/jp4:2001338 AbstractPDF (1.329 MB)
An extended interpretation of chemical vapor infiltration of carbon p. Pr3-307 Z.J. Hu, W.G. Zhang and K.J. Hüttinger DOI: https://doi.org/10.1051/jp4:2001339 AbstractPDF (240.2 KB)
Structural and morphological changes in low temperature annealed LPCVD Si layers p. Pr3-315 B. Cobianu, M. Modreanu, M. Danila, R. Gavrila, M . Bercu and M. Gartner DOI: https://doi.org/10.1051/jp4:2001340 AbstractPDF (401.1 KB)
Growth of Ru and RuO2 films by metal-organic chemical vapour deposition p. Pr3-325 F. Fröhlich, D. Machajdik, V. Cambel, J. Fedor, A. Pisch and J. Lindner DOI: https://doi.org/10.1051/jp4:2001341 AbstractPDF (370.2 KB)
Growth of magnetoresistant La1-xMnO3 films on r-plane cut sapphire p. Pr3-333 K. Fröhlich, M. Pripko, I. Vávra, K. Dénešová and D. Machajdík DOI: https://doi.org/10.1051/jp4:2001342 AbstractPDF (268.7 KB)
Structural properties of [(La0.7Sr0.3MnO3/SrTiO3)]15 superlattices prepared by pulsed injection-MOCVD p. Pr3-341 M. Rosina, C. Dubourdieu, F. Weiss, J.P. Sénateur and K. Fröhlich DOI: https://doi.org/10.1051/jp4:2001343 AbstractPDF (270.1 KB)
Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsine p. Pr3-349 F. Maury and E. Bedel-Pereira DOI: https://doi.org/10.1051/jp4:2001344 AbstractPDF (395.6 KB)
Treatment of polyethylene terephthalate in a He glow discharge p. Pr3-357 D.D. Papakonstantinou, D. Mataras and Arefi-Khonsari DOI: https://doi.org/10.1051/jp4:2001345 AbstractPDF (247.5 KB)
Photodegradative properties of TiO2 films prepared by MOCVD p. Pr3-363 I. Justicia, J.A. Ayllón, A. Figueras, G.A. Battiston and R. Gerbasi DOI: https://doi.org/10.1051/jp4:2001346 AbstractPDF (322.2 KB)
Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. Pr3-371 D.E. Whitehead, M.E. Pemble, H.M. Yates, A. Blanco, C. Lopez, H. Miguez and F.J. Meseguer DOI: https://doi.org/10.1051/jp4:2001347 AbstractPDF (278.3 KB)
Tin oxide APCVD thin films grown by SnCl4 oxidation on glass and Si substrates in a cold wall reactor p. Pr3-377 A. Koutsogianni and D. Tsamakis DOI: https://doi.org/10.1051/jp4:2001348 AbstractPDF (264.3 KB)
Preparation and optical study of APCVD mixed metal oxide films p. Pr3-385 T. Ivanova, K.A. Gesheva, A. Szekeres, A. Maksimov and S. Zaitzev DOI: https://doi.org/10.1051/jp4:2001349 AbstractPDF (245.9 KB)
Processing of (PyC/TiC)n multilayered coatings by pulsed CVD and RCVD p. Pr3-391 O. Rapaud, H. Vincent, C. Vincent, S. Jacques and J. Bouix DOI: https://doi.org/10.1051/jp4:2001350 AbstractPDF (391.1 KB)
Carbon nanotubes by CVD and applications p. Pr3-401 A. Cassell, L. Delzeit, C. Nguyen, R. Stevens, J. Han and M. Meyyappan DOI: https://doi.org/10.1051/jp4:2001351 AbstractPDF (1.823 MB)
Synthesis and characterization of carbon nanotubes p. Pr3-411 J. B. Nagy and A. Fonseca DOI: https://doi.org/10.1051/jp4:2001352 AbstractPDF (1.471 MB)
Gas-phase stability of c-BN clusters p. Pr3-423 K. Larsson DOI: https://doi.org/10.1051/jp4:2001353 AbstractPDF (364.9 KB)
Silicon oxide nanolayers for soft X-ray optics produced by plasma enhanced CVD p. Pr3-431 F. Hamelmann, A. Aschentrup, J. Schmalhorst, U. Kleineberg, U. Heinzmann, K. Dittmar and P. Jutzi DOI: https://doi.org/10.1051/jp4:2001354 AbstractPDF (247.2 KB)
Nanoscale cobalt oxides thin films obtained by CVD and sol-gel routes p. Pr3-437 L. Armelao, D. Barreca, S. Gross and E. Tondello DOI: https://doi.org/10.1051/jp4:2001355 AbstractPDF (817.2 KB)
Chemical vapour deposition - a promising method for production of different kinds of carbon nanotubes p. Pr3-445 A. Leonhardt, M. Ritschel, K. Bartsch, A. Graff, C. Täschner and J. Fink DOI: https://doi.org/10.1051/jp4:2001356 AbstractPDF (1.830 MB)
Nanophased ZrO2-CeO2 or TiO2-ZrO2-CeO2 films by CVD as catalysts for hydrocarbon complete combustion p. Pr3-453 D. Barreca, G.A. Battiston, U. Casellato, R. Gerbasi, E. Roncari, E. Tondello and P. Zanella DOI: https://doi.org/10.1051/jp4:2001357 AbstractPDF (1.331 MB)
Formation of cubic SiC nanocrystals by laser-assisted CVD p. Pr3-461 Y. Kamlag, A. Goossens, I. Colbeck and J. Schoonman DOI: https://doi.org/10.1051/jp4:2001358 AbstractPDF (591.7 KB)
Nanocrystalline ZnO from siloxy-substituted single-source precursors p. Pr3-467 K. Merz, R. Schoenen and M. Driess DOI: https://doi.org/10.1051/jp4:2001359 AbstractPDF (433.7 KB)
Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors p. Pr3-473 H. Parala, A. Devi, W. Rogge, A. Birkner and R.A. Fischer DOI: https://doi.org/10.1051/jp4:2001360 AbstractPDF (1.105 MB)
Synthesis of nanocomposite Pd balls and wires by chemical vapor infiltration p. Pr3-481 K.-B. Lee, C.-S. Choi, S.J. Oh, H.-C.Ri and J. Cheon DOI: https://doi.org/10.1051/jp4:2001361 AbstractPDF (282.3 KB)
Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVD p. Pr3-487 S. Mathur, M. Veith, V. Sivakov, H. Shen and H.-B. Gao DOI: https://doi.org/10.1051/jp4:2001362 AbstractPDF (527.6 KB)
Advances in copper CVD for the semiconductor industry p. Pr3-497 J.A.T. Norman DOI: https://doi.org/10.1051/jp4:2001363 AbstractPDF (418.9 KB)
General aspects of surface chemistry of metal β-diketonates p. Pr3-505 I.K. Igumenov, A.E. Turgambaeva and P.P. Semyannikov DOI: https://doi.org/10.1051/jp4:2001364 AbstractPDF (537.8 KB)
Fundamental studies on the decomposition mechanism of Ti(OC3H7)4 and TiO2 film evolution on Si(100) and Pt(100) surfaces p. Pr3-517 S.-I. Cho, S.H. Moon and C.-H. Chung DOI: https://doi.org/10.1051/jp4:2001365 AbstractPDF (373.2 KB)
Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor p. Pr3-525 B. Atakan and Z.-J. Liu DOI: https://doi.org/10.1051/jp4:2001366 AbstractPDF (341.8 KB)
Direct liquid injection MOCVD growth of TiO2 films using the precursor Ti(mpd)(dmae)2 p. Pr3-531 A. Awaluddin, M.E. Pemble, A.C. Jones and P.A. Williams DOI: https://doi.org/10.1051/jp4:2001367 AbstractPDF (347.0 KB)
Al2O3 growth optimisation using aluminium dimethylisopropoxide as precursor as a function of reaction conditions and reacting gases p. Pr3-539 D. Barreca, G.A. Battiston, G. Carta, R. Gerbasi, G. Rossetto, E. Tondello and P. Zanella DOI: https://doi.org/10.1051/jp4:2001368 AbstractPDF (379.6 KB)
Synthesis of siloxy- and alkoxy-substituted ZnO-aggregates for CVS of ZnO p. Pr3-547 R. Schoenen, K. Merz, S. Rell and M. Driess DOI: https://doi.org/10.1051/jp4:2001369 AbstractPDF (172.8 KB)
CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac) p. Pr3-553 W. Zhuang, L.J. Charneski, D.R. Evans, S.T. Hsu, Z. Tang and A.M. Guloy DOI: https://doi.org/10.1051/jp4:2001370 AbstractPDF (357.5 KB)
Metal and oxide thin film MO CVD as a base for nanostructure and superlattice formation p. Pr3-561 V.V. Bakovets, N.V. Gelfond, V.N. Mitkin, T.M. Levashova, I.P. Dolgovesova, V.T. Ratushnjak and V.G. Martynets DOI: https://doi.org/10.1051/jp4:2001371 AbstractPDF (718.6 KB)
Chemical vapour deposition of copper using copper(II) alkoxides p. Pr3-569 R. Becker, J. Weiß, A. Devi and R.A. Fischer DOI: https://doi.org/10.1051/jp4:2001372 AbstractPDF (534.8 KB)
Growth of InN whiskers from single source precursor p. Pr3-577 A. Devi, H. Parala, W. Rogge, A. Wohlfart, A. Birkner and R.A. Fischer DOI: https://doi.org/10.1051/jp4:2001373 AbstractPDF (854.3 KB)
New volatile polyazolylborates of copper(I) for MOCVD p. Pr3-585 A. Drozdov, S.I. Troyanov, C. Pettinari, F. Marchetti, C. Santini, R. Pettinari, G.A. Battiston and R. Gerbasi DOI: https://doi.org/10.1051/jp4:2001374 AbstractPDF (592.0 KB)
MO CVD obtaining composite coatings from metal of platinum group on titanium electrodes p. Pr3-593 N.V. Gelfond, P.S. Galkin, I. K. Igumenov, N.B. Morozova, N.E. Fedotova, G.I. Zharkova and Yu.V. Shubin DOI: https://doi.org/10.1051/jp4:2001375 AbstractPDF (306.5 KB)
MOCVD of rhenium-containing complex oxides with the new thd-precursor p. Pr3-601 O.Yu. Gorbenko, S.I. Troyanov, A.A. Zakharov and A.A. Bosak DOI: https://doi.org/10.1051/jp4:2001376 AbstractPDF (1.658 MB)
Vapor pressure of precursors for CVD on the base of platinum group metals p. Pr3-609 N.B. Morozova, G.I. Zharkova, P.P. Semyannikov, S.V. Sysoev, I.K. Igumenov, N.E. Fedotova and N.V. Gelfond DOI: https://doi.org/10.1051/jp4:2001377 AbstractPDF (329.4 KB)
Investigation of composition, optical and electrophysical properties of tin dioxide films made by oxidative pyrolysis of tetraethyltin p. Pr3-617 B. Kozyrkin DOI: https://doi.org/10.1051/jp4:2001378 AbstractPDF (170.4 KB)
Thermal conversions of some Ba, Sr, Ti oxide precursors for CVD p. Pr3-621 A.E. Turgambaeva and I.K. Igumenov DOI: https://doi.org/10.1051/jp4:2001379 AbstractPDF (297.3 KB)
CVD deposition of cobalt oxide (CO3O4) from Co(acac)2 p. Pr3-629 E. Fischer Rivera, B. Atakan and K. Kohse-Höinghaus DOI: https://doi.org/10.1051/jp4:2001380 AbstractPDF (1.106 MB)
Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate p. Pr3-637 A.U. Mane, K. Shalini and S.A. Shivashankar DOI: https://doi.org/10.1051/jp4:2001381 AbstractPDF (733.7 KB)
MOCVD of Ag thin films p. Pr3-645 S. Paramonov, S. Samoilenkov, S. Papucha, I. Malkerova, A. Alikhanyan, N. Kuzmina, S.I. Troyanov and A.R. Kaul DOI: https://doi.org/10.1051/jp4:2001382 AbstractPDF (375.5 KB)
Deposition by an aerosol assisted MOCVD process of Eu or Er doped Y2O3-P2O5 thin films p. Pr3-653 J.L. Deschanvres and W. Meffre DOI: https://doi.org/10.1051/jp4:2001383 AbstractPDF (294.4 KB)
Volatility studies on single source precursors for LaNiO3 film deposition: Mass spectrometry and thermal analysis p. Pr3-661 N. Kuzmina, I. Malkerova, M. Ryazanov, A. Alikhanyan, A. Rogachev and A.N. Gleizes DOI: https://doi.org/10.1051/jp4:2001384 AbstractPDF (322.9 KB)
Characterization of a solvant-free vapour source for MOCVD p. Pr3-669 C. Jimenez, H. Guillon, B. Pierret, O. Stadel, J. Schmidt, U. Krause and G. Wahl DOI: https://doi.org/10.1051/jp4:2001385 AbstractPDF (242.3 KB)
Influence of thermal decomposition behavior of titanium precursors on (Ba,Sr)TiO3 thin films p. Pr3-675 Y.S. Min, Y.J. Cho, D. Kim, J.H. Lee, B.M. Kim, S.K. Lim, I.M. Lee and W.I. Lee DOI: https://doi.org/10.1051/jp4:2001386 AbstractPDF (299.8 KB)
Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor p. Pr3-683 A. Wohlfart, A. Devi, F. Hipler, H.W. Becker and R.A. Fischer DOI: https://doi.org/10.1051/jp4:2001387 AbstractPDF (216.7 KB)
Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources: Mechanism of the process and properties of resulting silicon-carbon deposits p. Pr3-691 A.M. Wrobel DOI: https://doi.org/10.1051/jp4:2001388 AbstractPDF (544.6 KB)
Photon assisted CVD p. Pr3-703 K. Piglmayer, M. Boman, M. Lindstam and R. Chabicovsky DOI: https://doi.org/10.1051/jp4:2001389 AbstractPDF (640.0 KB)
Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin films p. Pr3-715 E. Amanatides, D.E. Rapakoulias and D. Mataras DOI: https://doi.org/10.1051/jp4:2001390 AbstractPDF (446.6 KB)
Microwave plasma enhanced CVD of aluminum oxide films: Influence of the deposition parameter on the films characteristics p. Pr3-723 H. Hidalgo, P. Tristant, A. Denoirjean and J. Desmaison DOI: https://doi.org/10.1051/jp4:2001391 AbstractPDF (374.7 KB)
Comparative characterization of nitrogen-rich CNx films prepared by different ICP-CVD techniques p. Pr3-731 C. Popov, J. Bulir, L. Zambov, M. Jelinek and M.-P. Delplancke-Ogletree DOI: https://doi.org/10.1051/jp4:2001392 AbstractPDF (442.3 KB)
GeO2 and SiO2 thin film preparation with CVD using ultraviolet excimer lamps p. Pr3-739 K. Kurosawa, Y. Maezono, J.-I. Miyano, T. Motoyama and A. Yokotani DOI: https://doi.org/10.1051/jp4:2001393 AbstractPDF (336.3 KB)
Room temperature SiO2 films deposited by multipolar ECR PECVD p. Pr3-747 G. Isai, A. Kovalgin, J. Holleman, P. Woerlee and H. Wallinga DOI: https://doi.org/10.1051/jp4:2001394 AbstractPDF (368.6 KB)
Aluminium nitride synthesis by RPECVD p. Pr3-755 T. Belmonte, J.Y. Poussardin, L. Lefèvre and H. Michel DOI: https://doi.org/10.1051/jp4:2001395 AbstractPDF (410.0 KB)
Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structure p. Pr3-763 G.C. Chen, M.C. Kim, T.H. Kim, S.-B. Lee and J.-H. Boo DOI: https://doi.org/10.1051/jp4:2001396 AbstractPDF (328.1 KB)
RMPECVD of silica films with a high microwave power (1600 W) parametric studies p. Pr3-771 P. Tristant, J. Desmaison, F. Naudin and D. Merle DOI: https://doi.org/10.1051/jp4:2001397 AbstractPDF (373.5 KB)
Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges p. Pr3-779 A. Hammad, E. Amanatides, D.E. Rapakoulias and D. Mataras DOI: https://doi.org/10.1051/jp4:2001398 AbstractPDF (400.9 KB)
Plasma enhanced decomposition of propylene on activated carbon fibers p. Pr3-787 T. Orfanoudaki, I. Dolios, S. Korili, P. Samaras, N. Platakis and G.P. Sakellaropoulos DOI: https://doi.org/10.1051/jp4:2001399 AbstractPDF (346.7 KB)
Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor deposition p. Pr3-795 C. Shim, J. Yang, Y. C. Quan, J. Choi and D. Jung DOI: https://doi.org/10.1051/jp4:20013100 AbstractPDF (421.2 KB)
Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method p. Pr3-803 P. Thévenin, A. Soltani and A. Bath DOI: https://doi.org/10.1051/jp4:20013101 AbstractPDF (301.4 KB)
Room temperature deposition of GeO2 thin film using dielectric barrier discharge driven excimer lamps p. Pr3-811 Y. Maezono, H. Yanagita, K. Nishi, J.-I. Miyano, A. Yokotani, K. Kurosawa, N. Hishinuma and H. Matsuno DOI: https://doi.org/10.1051/jp4:20013102 AbstractPDF (2.126 MB)
Low frequency PACVD of silicon-carbon alloys : Process study p. Pr3-817 L. Thomas, J.M. Badie, E. Tomasella, M. Ducarroir and R. Berjoan DOI: https://doi.org/10.1051/jp4:20013103 AbstractPDF (391.0 KB)
Selective area deposition of titanium dioxide thin films by light induced chemical vapour deposition p. Pr3-825 E. Halary-Wagner, P. Lambelet, G. Benvenuti and P. Hoffmann DOI: https://doi.org/10.1051/jp4:20013104 AbstractPDF (2.110 MB)
Thermal barrier coatings p. Pr3-835 G. Wahl, Ch. Metz and S. Samoilenkov DOI: https://doi.org/10.1051/jp4:20013105 AbstractPDF (1.470 MB)
Advances in chemically vapour deposited wear resistant coatings p. Pr3-847 S. Ruppi DOI: https://doi.org/10.1051/jp4:20013106 AbstractPDF (3.813 MB)
CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics p. Pr3-861 S. M. Zemskova, J. A. Haynes and K. M. Cooley DOI: https://doi.org/10.1051/jp4:20013107 AbstractPDF (1.552 MB)
Yttrium containing aluminide layers p. Pr3-869 Ch. Metz, G. Wahl, P. Bianchi, M. Innocenti, D. Baxter, N. Archer and R. Wing DOI: https://doi.org/10.1051/jp4:20013108 AbstractPDF (271.6 KB)
Fiber-coatings for fiber-reinforced mullite/mullite composites p. Pr3-877 K. Nubian, G. Wahl, B. Saruhan and H. Schneider DOI: https://doi.org/10.1051/jp4:20013109 AbstractPDF (879.7 KB)
Coating of continuous carbon fibers with double layers by chemical vapor deposition p. Pr3-885 N. Popovska, S. Schmidt, E. Edelmann, V. K. Wunder, H. Gerhard and G. Emig DOI: https://doi.org/10.1051/jp4:20013110 AbstractPDF (2.052 MB)
Wear behavior of PACVD tin coatings deposited onto tool steels p. Pr3-893 M. stoiber, G . Fontalvo, M. Panzenböck, C. Mitterer, C. Lugmair and R. Kullmer DOI: https://doi.org/10.1051/jp4:20013111 AbstractPDF (527.8 KB)
Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method p. Pr3-901 A. Izumi, H. Sato and H. Matsumura DOI: https://doi.org/10.1051/jp4:20013112 AbstractPDF (277.1 KB)
Investigation of the tantalum chlorination with hydrogen chloride for LPCVD tantalum elaboration p. Pr3-907 A. Levesque and A. Bouteville DOI: https://doi.org/10.1051/jp4:20013113 AbstractPDF (234.1 KB)
Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. Pr3-915 A. Levesque and A. Bouteville DOI: https://doi.org/10.1051/jp4:20013114 AbstractPDF (245.0 KB)
In situ characterization of atomic layer deposition of SrTiO3 p. Pr3-923 A. Rahtu, T. Hänninen and M. Ritala DOI: https://doi.org/10.1051/jp4:20013115 AbstractPDF (336.8 KB)
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors p. Pr3-931 W.-C. Liu, H.-J. Pan, C.-H. Yen, K.-P. Lin, C.-Z. Wu, W.-H. Chiou and C.-Y. Chen DOI: https://doi.org/10.1051/jp4:20013116 AbstractPDF (272.1 KB)
Development of SiNx LPCVD processes for microtechnological applications p. Pr3-937 B. Rousset, L. Furgal, P. Fadel, A. Fulop, D. Pujos and P. Temple-Boyer DOI: https://doi.org/10.1051/jp4:20013117 AbstractPDF (349.4 KB)
High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMT's) p. Pr3-945 W.-C. Liu, K.-W. Lin, K.-H. Yu, W.-L. Chang, C.-C. Cheng, C.-K. Wang and H.-M. Chang DOI: https://doi.org/10.1051/jp4:20013118 AbstractPDF (249.7 KB)
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations p. Pr3-951 W.-C. Liu, K.-H. Yu, K.-W. Lin, K.-P. Lin, C.-H. Yen, C.-C. Cheng, C.-K. Wang and H.-M. Chuang DOI: https://doi.org/10.1051/jp4:20013119 AbstractPDF (217.1 KB)
A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior p. Pr3-957 W.-C. Liu, W.-C. Wang, C.-H. Yen, C.-C. Cheng, C.-Z. Wu, W.-H. Chiou and C.-Y. Chuen DOI: https://doi.org/10.1051/jp4:20013120 AbstractPDF (221.5 KB)
Characterisation of LPCVD silicon oxynitride films by optical spectroscopy p. Pr3-963 M. Bercu, C. Cobianu, M. Modreanu and B.N. Bercu DOI: https://doi.org/10.1051/jp4:20013121 AbstractPDF (408.8 KB)
Characterization of the core structure of growth defects in CVD diamond films by UHREM : Z-shaped twin interactions p. Pr3-971 D. Dorignac, S. Delclos, F. Phillipp, F. Silva and A. Gicquel DOI: https://doi.org/10.1051/jp4:20013122 AbstractPDF (1.174 MB)
Structure study of thin RPECVD CdxZn1-xS films p. Pr3-979 N.I. Fainer, M.L. Kosinova, Yu.M. Rumyantsev, E.A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N.P. Sysoeva and F.A. Kuznetsov DOI: https://doi.org/10.1051/jp4:20013123 AbstractPDF (426.4 KB)
Structure and composition investigation of RPECVD SiCN and LPCVD BCN films p. Pr3-987 M.L. Kosinova, N.I Fainer, Yu.M. Rumyantsev, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka and F.A. Kuznetsov DOI: https://doi.org/10.1051/jp4:20013124 AbstractPDF (466.5 KB)
In situ mass spectrometry during thermal CVD of the tris-acetylacetonates of 3-d transition metals p. Pr3-995 P.P. Semyannikov, I.K. Igumenov, S.V. Trubin and I.P. Asanov DOI: https://doi.org/10.1051/jp4:20013125 AbstractPDF (379.6 KB)
Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition p. Pr3-1005 L.M. Zambov, B. Ivanov, C. Popov, G. Georgiev, I. Stoyanov and D.B. Dimitrov DOI: https://doi.org/10.1051/jp4:20013126 AbstractPDF (414.8 KB)
Deposition process of laminar pyrocarbon from propane p. Pr3-1013 J. Lavenac, F. Langlais, X. Bourrat and R. Naslain DOI: https://doi.org/10.1051/jp4:20013127 AbstractPDF (488.2 KB)
APCVD-molybdenum oxide thin films : Vibrational and optical properties p. Pr3-1023 K.A. Gesheva, T. Ivanova, A. Szekeres, A. Maksimov and S. Zaitzev DOI: https://doi.org/10.1051/jp4:20013128 AbstractPDF (254.8 KB)
Influence of texture on the absorption threshold of LPCVD silicon films p. Pr3-1029 D. Davazoglou, D.N. Kouvatsos and E. Valamontes DOI: https://doi.org/10.1051/jp4:20013129 AbstractPDF (396.6 KB)
Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS p. Pr3-1037 D.N. Kouvatsos, V.Em. Vamvakas and D. Davazoglou DOI: https://doi.org/10.1051/jp4:20013130 AbstractPDF (400.6 KB)
MOCVD of antimony oxides for gas sensor applications p. Pr3-1045 P. W. Haycock, G. A. Horley, K. C. Molloy, C. P. Myers, S. A. Rushworth and L. M. Smith DOI: https://doi.org/10.1051/jp4:20013131 AbstractPDF (851.2 KB)
CVD techniques for gas separation membranes synthesis - characterization - applications p. Pr3-1053 J. Durand and V. Rouessac DOI: https://doi.org/10.1051/jp4:20013132 AbstractPDF (2.803 MB)
Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition p. Pr3-1065 S. Oda and K. Nishiguchi DOI: https://doi.org/10.1051/jp4:20013133 AbstractPDF (1.591 MB)
Group-III nitride growth in production scale MOVPE systems p. Pr3-1073 B. Schineller, H. Protzmann, M. Luenenbuerger, M. Heuken, E.V. Lutsenko and G.P. Yablonskii DOI: https://doi.org/10.1051/jp4:20013134 AbstractPDF (975.1 KB)
Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition p. Pr3-1079 M. Pons, J. Mezière, J. M. Dedulle, S. Wan Tang Kuan, E. Blanquet, C. Bernard, P. Ferret, L. Di Cioccio, T. Billon and R. Madar DOI: https://doi.org/10.1051/jp4:20013135 AbstractPDF (1.848 MB)
Single source MOCVD system for deposition of superconducting films onto moved tapes p. Pr3-1087 O. Stadel, J. Schmidt, N.V. Markov, S.V. Samoilenkov, G. Wahl, C. Jimenez, F. Weiss, D. Selbmann, J. Eickemeyer, O.Yu. Gorbenko et al. (2 more) DOI: https://doi.org/10.1051/jp4:20013136 AbstractPDF (1.648 MB)
Reactive pack-cementation coating of silicon carbide on carbon-carbon composite p. Pr3-1095 O. Paccaud and A. Derré DOI: https://doi.org/10.1051/jp4:20013137 AbstractPDF (987.9 KB)
Atomic layer deposition of CuxS p. Pr3-1103 L. Reijnen, B. Meester, A. Goossens and J. Schoonman DOI: https://doi.org/10.1051/jp4:20013138 AbstractPDF (579.5 KB)
Diagnostics of TiN coatings process in pulsed D.C plasma enhanced chemical vapor deposition p. Pr3-1109 S. Ma, K. Xu and V. Ji DOI: https://doi.org/10.1051/jp4:20013139 AbstractPDF (496.1 KB)
Spouted bed metallorganic chemical vapor deposition of ruthenium on NiCoCrAlYTa powders p. Pr3-1117 F. Juarez, A. Castillo, B. Pieraggi and C. Vahlas DOI: https://doi.org/10.1051/jp4:20013140 AbstractPDF (2.497 MB)
Deposition of Cr, Al coatings on Ni by means of a PB and FB CVD process p. Pr3-1125 C. Christoglou and G.N. Angelopoulos DOI: https://doi.org/10.1051/jp4:20013141 AbstractPDF (422.7 KB)
Study of SiO2-films deposited by adding N2O or O2 to TEOS in photo-chemical vapor deposition at room temperature p. Pr3-1131 Y. Motoyama, J.-I. Miyano, K. Toshikawa, Y. Yagi, H. Yanagida, K. Kurosawa and A. Yokotani DOI: https://doi.org/10.1051/jp4:20013142 AbstractPDF (357.1 KB)
The development of MOCVD techniques for ferroelectric and dielectric thin film depositions p. Pr3-1139 T. Li and S.T. Hsu DOI: https://doi.org/10.1051/jp4:20013143 AbstractPDF (374.3 KB)
Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films p. Pr3-1147 B. Meester, L. Reijnen, A. Goossens and J. Schoonman DOI: https://doi.org/10.1051/jp4:20013144 AbstractPDF (294.4 KB)
NIR diode laser based process control for industrial CVD reactors p. Pr3-1153 V. Hopfe, D.W. Sheel, D. Raisbeck, J. M. Rivero, W. Graehlert, O. Throl, A.M.B. van Mol and C.I.M.A. Spee DOI: https://doi.org/10.1051/jp4:20013145 AbstractPDF (299.6 KB)
Unique precursor delivery and control afforded by low-pressure pulsed-CVD process with ultrasonic atomization p. Pr3-1161 S. Krumdieck, O. Sbaizero and R. Raj DOI: https://doi.org/10.1051/jp4:20013146 AbstractPDF (462.1 KB)
Deposition of SrRuO3 films and SrRuO3/YBa2Cu3O7 heterostructures by pulsed injection MOCVD p. Pr3-1169 A. Abrutis, V. Plausinaitiene, S. Pasko, A. Teiserskis, V. Kubilius, Z. Saltyte and J.-P. Sénateur DOI: https://doi.org/10.1051/jp4:20013147 AbstractPDF (241.3 KB)
GaN heteroepitaxy by remote plasma MOCVD : Real time monitoring by laser reflectance interferometry p. Pr3-1175 M. Losurdo, A. Grimaldi, M. Giangregorio, P. Capezzuto and G. Bruno DOI: https://doi.org/10.1051/jp4:20013148 AbstractPDF (419.0 KB)
Area selective OMCVD of gold and palladium on self-assembled organic monolayers : Control of nucleation sites p. Pr3-1183 R.A. Fischer, U. Weckenmann, C. Winter, J. Käshammer, V. Scheumann and S. Mittler DOI: https://doi.org/10.1051/jp4:20013149 AbstractPDF (417.2 KB)
CVD modifications of porous Vycor silica for gas separation and sensor applications p. Pr3-1191 E. Magoulianti, K. Beltsios, D. Davazoglou and N. Kanellopoulos DOI: https://doi.org/10.1051/jp4:20013150 AbstractPDF (312.7 KB)
Fabrication of fine copper lines on AZ 5214TM patterned silicon substrates by selective chemical vapor deposition p. Pr3-1197 A.N. Gleizes, S. Vidal and D. Davazoglou DOI: https://doi.org/10.1051/jp4:20013151 AbstractPDF (308.9 KB)