| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-817 - Pr3-824 | |
| DOI | https://doi.org/10.1051/jp4:20013103 | |
J. Phys. IV France 11 (2001) Pr3-817-Pr3-824
DOI: 10.1051/jp4:20013103
Low frequency PACVD of silicon-carbon alloys : Process study
L. Thomas1, J.M. Badie2, E. Tomasella1, M. Ducarroir1 and R. Berjoan21 IMP-CNRS, Université de Perpignan, 52 avenue de Villeneuve, 66860 Perpignan cedex, France
2 IMP-CNRS, BP. 5, 66120 Font-Romeu, France
Abstract
Deposition of silicon-carbon alloys was carried out at temperature as low as 453 K. Electrical measurements performed on the process allow to estimate ion energy and current. These factors tend to decrease the ratio silicon-to-carbon of about 15% whatever the temperature which acts in an opposite way. The variations of the deposit composition are discussed in connection with gaseous species which were identified by optical emission spectroscopy in the plasma sheath. The lines of the few emitting species H, Si+, Ar and Ar+ are broadened by Doppler effect. Through additional OES experiments, it is demonstrated that the decrease of the ratio Si/C is due to a silicon etching from the growing film. The factors which have been varied are discussed in relation with the films features. Adherent deposits as hard as 20 GPa are obtained at 453 K.
© EDP Sciences 2001