| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-779 - Pr3-785 | |
| DOI | https://doi.org/10.1051/jp4:2001398 | |
J. Phys. IV France 11 (2001) Pr3-779-Pr3-785
DOI: 10.1051/jp4:2001398
Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges
A. Hammad, E. Amanatides, D.E. Rapakoulias and D. MatarasPlasma Technology Laboratory, Department of Chemical Engineering, University of Patras, P.O. Box 1407, 26500 Patras, Greece
Abstract
The effect of the double layers formation on the gas-phase composition of SiH4/H2 discharges and the deposition rate of microcrystalline silicon thin films has been investigated by applying mass spectrometric and film growth measurements. Spatially Resolved Optical Emission Spectroscopy has been used for the detection of the appearance of this additional electron heating mechanism that in the present conditions results from the variation of either the discharge power or the total gas pressure. The experimental results have been in al1 cases combined to a gas phase and surface simulator of SiH4/H2 discharges allowing thus the discussion for the rather limited effect of this mechanism on the deposition process of µc-Si:H thin films.
© EDP Sciences 2001