Heat and mass transfer during producing silicon layers by chloride LPCVD process

Abstract
Thermodifision is shown to produce both qualitative and quantitative changes in the pattern of the distribution of the silicon deposition rate along the reactor. With decreasing temperature in the deposition zone or pressure in the reactor the kinetic reaction becomes the rate limiting stage of the process. In this case the factor influencing the kinetic reaction have a pronounced effect on the epitaxial layer. The approximate formulas are obtained, which permit calculating the process schedules for different geometry of the reactor.