| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-287 - Pr3-292 | |
| DOI | https://doi.org/10.1051/jp4:2001336 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-287-Pr3-292
DOI: 10.1051/jp4:2001336
1 Institute of Solid State Physics, 74 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
2 Institute of Electronics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
3 Technological Institute of Aeronautics, Sao Paolo, Brazil
4 ENSAM, 71250 Cluny, France
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-287-Pr3-292
DOI: 10.1051/jp4:2001336
Properties of thin AIN films prepared by PECVD and rapid thermal processes
G.D. Beshkov1, S.S. Georgiev1, K.G. Grigorov2, H.S. Maciel3, A. Djouadi4 and M. Marinov11 Institute of Solid State Physics, 74 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
2 Institute of Electronics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
3 Technological Institute of Aeronautics, Sao Paolo, Brazil
4 ENSAM, 71250 Cluny, France
Abstract
The paper deals with structural, morphological and electrical investigations of thin AIN films prepared by NH3 plasma enhanced chemical vapor deposition (PECVD). The results are compared with those when 600 nm thick Al films were rapid annealed (RTA) at 600 and 800°C in NH3 atmosphere for a time interval of 15, 30, 60 and 180 sec. Correlations between the properties of the layers, and the technological process and parameters were observed.
© EDP Sciences 2001