| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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| Page(s) | Pr3-585 - Pr3-592 | |
| DOI | https://doi.org/10.1051/jp4:2001374 | |
J. Phys. IV France 11 (2001) Pr3-585-Pr3-592
DOI: 10.1051/jp4:2001374
New volatile polyazolylborates of copper(I) for MOCVD
A. Drozdov1, S.I. Troyanov1, C. Pettinari2, F. Marchetti2, C. Santini2, R. Pettinari2, G.A. Battiston3 and R. Gerbasi31 Moscow State University, Chemistry Department, Vorobjevy Gory, 119899 Moscow, Russia
2 Dipartimento di Scienze Chimiche, Università degli Studi, Via S. Agostino 1, 62032 Camerino, Italy
3 Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Corso Stati Uniti 4, 35127 Padua, Italy
Abstract
The volatility of new bis- and tetrakis-(pyrazolyl)borates of copper(I) with monodentate tertiary phosphines recently prepared has been prepared by the reaction between CuCl, phosphine and KBH2pz2 or KBpz4 in CH3CN (Hpz is a pyrazole-type ligand) has been studied. The IR data in gas in a vast temperature region confirm the stability of precursors in vapour, suggesting the molecular structure in vapour being similar to that determined previously by X-ray diffraction. The dependence of the volatility on the number of the pyrazolyl-moieties and nature of phosphine is discussed. Film growth rates obtained from MOCVD experiments, as well as XRD and SEM data for copper films deposited by using [CuH2B(pz)2(PMePh2)2] as precursor are reported.
© EDP Sciences 2001