| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|
|---|---|---|
| Page(s) | Pr3-683 - Pr3-687 | |
| DOI | https://doi.org/10.1051/jp4:2001387 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-683-Pr3-687
DOI: 10.1051/jp4:2001387
1 Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Universitätsstr. 150, 44780 Bochum, Germany
2 Lehrstuhl für Experimentelle Physik III, Universitätsstr, 150, 44780 Bochum, Germany
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-683-Pr3-687
DOI: 10.1051/jp4:2001387
Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor
A. Wohlfart1, A. Devi1, F. Hipler1, H.W. Becker2 and R.A. Fischer11 Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Universitätsstr. 150, 44780 Bochum, Germany
2 Lehrstuhl für Experimentelle Physik III, Universitätsstr, 150, 44780 Bochum, Germany
Abstract
We report the growth of highly crystalline and oriented α-GaN layers showing a porous-like microstructure. Employing specific CVD conditions, GaN layers with such morphological features were obtained, and characterized in detail by XRD methods. The layer composition was analysed by XPS, AES as well as RBS, and the morphology was investigated by SEM and AFM measurements.
© EDP Sciences 2001