Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-539-Pr3-546
DOI: 10.1051/jp4:2001368

Al₂O₃ growth optimisation using aluminium dimethylisopropoxide as precursor as a function of reaction conditions and reacting gases

D. Barreca¹, G.A. Battiston², G. Carta², R. Gerbasi², G. Rossetto², E. Tondello¹ and P. Zanella<sup>2

1</sup>  Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Centro di Studio sulla Stabilità e Reattività dei Composti di Coordinazione del CNR, Università di Padova, Via Marzolo 1, 35131 Padova, ltaly
²  Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Corso Stati , Uniti 4, 35127 Padova, ltaly

Abstract
Aluminum oxide films were grown in a hot-wall low-pressure metal organic chemical vapor deposition (MOCVD) system using aluminum dimethylisopropoxide as precursor. Experimental reaction conditions and the reacting gas (O₂, H₂O, N₂O) have been systematically varied with the aim to decrease the deposition temperature and obtain transparent, dense and carbon-free films. Changes in the gas phase composition were studied by FT-IR spectroscopy using an in-line cell. The reactor temperature ranged from 230 °C to 380 °C. The microstructure of the films was investigated by X-ray Diffraction, while the surface chemical composition was studied by X-ray Photoelectron. Atomic Force Microscopy was employed to analyze the surface morphology of the films as a function of reaction conditions and reacting gases. The best performances have been obtained using dry oxygen at 1000 Pa and oxygen mixed with water vapor at 100 Pa. High growth rates such as 140 nm min^-1 have been obtained at 270 °C in the latter case. Different reaction mechanisms have been proposed in the two cases.

© EDP Sciences 2001