| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-739 - Pr3-745 | |
| DOI | https://doi.org/10.1051/jp4:2001393 | |
J. Phys. IV France 11 (2001) Pr3-739-Pr3-745
DOI: 10.1051/jp4:2001393
GeO2 and SiO2 thin film preparation with CVD using ultraviolet excimer lamps
K. Kurosawa, Y. Maezono, J.-I. Miyano, T. Motoyama and A. YokotaniDepartment of Electronical and Electronics Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
Abstract
We have prepared SiO2 and GeO2 thin films from tetraethoxyorthosilicate (TEOS; Si(OC2H5)4) and tetraethoxyorthogermanate (TEOG: Ge(OC2H5)4), respectively, by chemical vapor deposition (CVD) assisted by high-energy photons. The photons are supplied from excimer lamps which emit incoherent light at 308 (XeCl), 222 (KrCl), 172 (Xe2), 146 (Kr2) and 126 nm (Ar2). GeO2 film deposition is observed for all excimer lamps used here, but SiO2 films are obtained at wavelengths shorter than 172 nm. This is caused by a fact that the bonding energy between Si and O is much higher than that between Ge and O. The deposition rate is around 8nm/min for SiO2 and 16nm/min for GeO2 films. The film deposition rate increases with increasing the light intensity and with decreasing substrate temperature.
© EDP Sciences 2001