| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-149 - Pr3-154 | |
| DOI | https://doi.org/10.1051/jp4:2001318 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-149-Pr3-154
DOI: 10.1051/jp4:2001318
1 Laboratoire de Génie Chimique, UMR 5503 du CNRS, ENSIGC, Institut National Polytechnique de Toulouse, 18 chemin de la Loge, 31078 Toulouse cedex, France
2 ATMEL ES2, Zone Industrielle, 13106 Rousset cedex, France
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-149-Pr3-154
DOI: 10.1051/jp4:2001318
Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O3, TMB, TMPi : Determination of a chemical mechanism
J.-P. Nieto1, B. Caussat1, J.-P. Couderc1, I. Orain2 and L. Jeannerot21 Laboratoire de Génie Chimique, UMR 5503 du CNRS, ENSIGC, Institut National Polytechnique de Toulouse, 18 chemin de la Loge, 31078 Toulouse cedex, France
2 ATMEL ES2, Zone Industrielle, 13106 Rousset cedex, France
Abstract
APCVD of boro-phospho silicate glass from mixtures of TEOS, TMB and TMPi has been analysed then modelled in a continuous reactor. A reduced chemical mechanism has been developed and the corresponding rate constants have been identified. The first results obtained are encouraging and suggest that the very simple gas phase chernistry selected could be precise enough to represent the main trends of this very complex deposition procedure.
© EDP Sciences 2001