A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior

W.-C. Liu; W.-C. Wang; C.-H. Yen; C.-C. Cheng; C.-Z. Wu; W.-H. Chiou; C.-Y. Chuen

doi:doi:10.1051/jp4:20013120

Numéro		J. Phys. IV France Volume 11, Numéro PR3, Août 2001 Thirteenth European Conference on Chemical Vapor Deposition


Page(s)		Pr3-957 - Pr3-961
DOI		https://doi.org/10.1051/jp4:20013120

Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-957-Pr3-961
DOI: 10.1051/jp4:20013120

A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior

W.-C. Liu, W.-C. Wang, C.-H. Yen, C.-C. Cheng, C.-Z. Wu, W.-H. Chiou and C.-Y. Chuen

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, l University Road, Tainan, Taiwan 70101, Republic of China

Abstract
A new S-shaped switch based on the InP/InGaAIAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current I_B. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.