| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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| Page(s) | Pr3-645 - Pr3-652 | |
| DOI | https://doi.org/10.1051/jp4:2001382 | |
J. Phys. IV France 11 (2001) Pr3-645-Pr3-652
DOI: 10.1051/jp4:2001382
MOCVD of Ag thin films
S. Paramonov1, S. Samoilenkov1, S. Papucha1, I. Malkerova2, A. Alikhanyan1, N. Kuzmina1, S.I. Troyanov1 and A.R. Kaul11 Moscow State University, Department of Chemistry, Leninskie Gory, 119899 Moscow, Russia
2 Kurnakov Institute of General and Inorganic Chemistry, 117234 Moscow, Russia
Abstract
The new mixed ligand complex [(n-Bu3P)Ag((CH3)3CCOO)] (I) is suggested as precursor for MOCVD of Ag thin films. It was characterized by elemental, TG analysis and by mass-spectrometry. It was shown that gas phase consisted only from monomeric molecules of I. X-ray study of (I) shows that crystal structure is build up from dimeric units with van der Waals interactions between them. Ag films were grown on Si and oxide substrates using I and [(Ag((CH3)3CCOO)] (II) precursors by CVD technique in presence of oxygen. The dependence of the films thickness, orientation and microstructure on the process parameters was defined. The use of the adduct was found to be at least 20 times more effective (regarding the film thickness) in comparison to that of II.
© EDP Sciences 2001