| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-247 - Pr3-254 | |
| DOI | https://doi.org/10.1051/jp4:2001331 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-247-Pr3-254
DOI: 10.1051/jp4:2001331
1 Chemistry Department, MSU, 119899 Moscow, Russia
2 IOPW, TU Braunschweig, Bienroder Weg 53, 38108 Braunschweig, Germany
3 National Centre for HREM, Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 Delft, The Netherlands
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-247-Pr3-254
DOI: 10.1051/jp4:2001331
Perovskite heterostructures grown by MOCVD
O.Yu. Gorbenko1, I.E. Graboy1, M.A. Novozhilov1, A.R. Kaul1, G. Wahl2 and V.L. Svetchnikov31 Chemistry Department, MSU, 119899 Moscow, Russia
2 IOPW, TU Braunschweig, Bienroder Weg 53, 38108 Braunschweig, Germany
3 National Centre for HREM, Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 Delft, The Netherlands
Abstract
3d-metal perovskites are promising thin film materials with a great variety of electrical and magnetic properties. We have deposited the epitaxial heterostructures including different combinations of CMR manganites (La1-xPrx)0,7Ca0,3Mn0,3, (x=0-l), metallic nickelates RNiO3 (R=Pr, Nd, Sm) with sharp metal-insulator transition and antiferromagnetic insulators RFeO3 (R=Nd, Eu) . The heterostructures were characterised by XRD, SEM, EDX, HREM, RBS, electric and magnetic measurements. Particular attention is paid to the lattice strain in the layers and the structure of their interfaces. The prototype electronic devices based on the heterostructures are discussed.
© EDP Sciences 2001