J. Phys. IV France
Volume 11, Number PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-1045 - Pr3-1050|
J. Phys. IV France 11 (2001) Pr3-1045-Pr3-1050
MOCVD of antimony oxides for gas sensor applicationsP. W. Haycock1, G. A. Horley2, K. C. Molloy2, C. P. Myers1, S. A. Rushworth3 and L. M. Smith3
1 Birchall Centre for Inorganic Chemistry and Materials Science, School of Chemistry and Physics, Lennard-Jones Laboratories, Keele University, Staffordshire ST5 5BG, U.K.
2 Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, U.K.
3 Epichem Ltd., Power Road, Bromborough, Wirral CH62 3QF, U. K.
Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from (nBuO)3Sb in the temperature range 500 - 550°C without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600°C using (EtO)3Sb as the precursor ; this latter process is enhanced by the addition of O2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.
© EDP Sciences 2001