| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-1045 - Pr3-1050 | |
| DOI | https://doi.org/10.1051/jp4:20013131 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-1045-Pr3-1050
DOI: 10.1051/jp4:20013131
1 Birchall Centre for Inorganic Chemistry and Materials Science, School of Chemistry and Physics, Lennard-Jones Laboratories, Keele University, Staffordshire ST5 5BG, U.K.
2 Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, U.K.
3 Epichem Ltd., Power Road, Bromborough, Wirral CH62 3QF, U. K.
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-1045-Pr3-1050
DOI: 10.1051/jp4:20013131
MOCVD of antimony oxides for gas sensor applications
P. W. Haycock1, G. A. Horley2, K. C. Molloy2, C. P. Myers1, S. A. Rushworth3 and L. M. Smith31 Birchall Centre for Inorganic Chemistry and Materials Science, School of Chemistry and Physics, Lennard-Jones Laboratories, Keele University, Staffordshire ST5 5BG, U.K.
2 Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, U.K.
3 Epichem Ltd., Power Road, Bromborough, Wirral CH62 3QF, U. K.
Abstract
Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from (nBuO)3Sb in the temperature range 500 - 550°C without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600°C using (EtO)3Sb as the precursor ; this latter process is enhanced by the addition of O2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.
© EDP Sciences 2001