Journal de Physique IV

T.I. Liskovskaya, L.G. Bulusheva, A.V. Okotrub, S.A. Krupoder, P.P. Semyannikov, I. P. Asanov, I.K. Igumenov, A.V. Manaev, V.F. Traven et A.G. Cherkov

DOI: https://doi.org/10.1051/jp4:2001309

Elementary steps and application of the CVD of SiC/BN double layers p. Pr3-77

S. Hemeltjen, J. Heinrich, G. Marx, D. Dietrich, K. Nestler, K. Weise et S. Stöckel

DOI: https://doi.org/10.1051/jp4:2001310

Thermodynamic and experimental study of low temperature ZrB₂chemical vapor deposition p. Pr3-85

J.F. Pierson, T. Belmonte et H. Michel

DOI: https://doi.org/10.1051/jp4:2001311

MOCVD of lead-containing perovskites p. Pr3-93

A.A. Bosak, A.N. Botev, O.Yu. Gorbenko, I.E. Graboy, S.V. Samoilenkov, A.R. Kaul, C. Dubourdieu et J.-P. Sénateur

DOI: https://doi.org/10.1051/jp4:2001312

Kinetic modelling of gas-phase decomposition of propane : Correlation with pyrocarbon deposition p. Pr3-101

B. Descamps, G.L. Vignoles, O. Féron, J. Lavenac et F. Langlais

DOI: https://doi.org/10.1051/jp4:2001313

Transition and rare earth metal fluorides as thermal sources of atomic and molecular fluorine p. Pr3-109

J.V. Rau, N.S. Chilingarov, M.S. Leskiv, V.F. Sukhoverkhov, V. Rossi Albertini et L.N. Sidorov

DOI: https://doi.org/10.1051/jp4:2001314

Multiscale approach to material synthesis by gas phase deposition p. Pr3-117

M. Masi

DOI: https://doi.org/10.1051/jp4:2001315

Modelling of silica film growth by chemical vapour deposition : Influence of the interface properties p. Pr3-129

L. Vázquez, F. Ojeda, R. Cuerno, R. Salvarezza et J.M. Albella

DOI: https://doi.org/10.1051/jp4:2001316

Kinetics of LPCVD of gallium nitride and oxynitride films based on pyrolysis of a gallium chloride complex with ammonia GaCl₃NH₃ p. Pr3-141

S.E. Alexandrov et V.A. Kriakin

DOI: https://doi.org/10.1051/jp4:2001317

Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O₃, TMB, TMP_i : Determination of a chemical mechanism p. Pr3-149

J.-P. Nieto, B. Caussat, J.-P. Couderc, I. Orain et L. Jeannerot

DOI: https://doi.org/10.1051/jp4:2001318

Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complex p. Pr3-155

S.E. Alexandrov et V.A. Chistiakov

DOI: https://doi.org/10.1051/jp4:2001319

Two-dimensional simulation of a pulsed-power electronegative discharge p. Pr3-163

B. Ramamurthi et D.J. Economou

DOI: https://doi.org/10.1051/jp4:2001320

Heat and mass transfer during producing silicon layers by chloride LPCVD process p. Pr3-171

V.G. Minkina

DOI: https://doi.org/10.1051/jp4:2001321

Thermodynamic modelling of the chemical vapour deposition of boron nitride in the B-N-H-He-O system p. Pr3-177

A.N. Golubenko, M.L. Kosinova et F.A. Kuznetsov

DOI: https://doi.org/10.1051/jp4:2001322

Computational analysis of horizontal cold wall CVD reactors at low pressure : Application to tungsten deposition from pyrolysis of W(CO)₆ p. Pr3-183

T.C. Xenidou, M.K. Koukou, A.G. Boudouvis et N.C. Markatos

DOI: https://doi.org/10.1051/jp4:2001323

Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane p. Pr3-189

L. Zambov, B. Caussat, R. Boubeker et J.-P. Couderc

DOI: https://doi.org/10.1051/jp4:2001324

Computational design and analysis of MOVPE reactors p. Pr3-197

R.P. Pawlowski, A.G. Salinger, L.A. Romero et J.N. Shadid

DOI: https://doi.org/10.1051/jp4:2001325

A TCAD tool for the simulation of the CVD process based on cellular automata p. Pr3-205

G.Ch. Sirakoulis, I. Karafyllidis et A. Thanailakis

DOI: https://doi.org/10.1051/jp4:2001326

Effect of the precursors on the deposition of (Ba, Sr)TIO₃ films p. Pr3-215

J.-H. Lee, W.-Y. Yang, S.-W. Rhee et D. Kim

DOI: https://doi.org/10.1051/jp4:2001327

Halide CVD of dielectric and ferroelectric oxides p. Pr3-223

A. Harsta

DOI: https://doi.org/10.1051/jp4:2001328

Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures p. Pr3-231

V. Em. Vamvakas, R. Berjoan, S. Schamm, D. Davazoglou et C. Vahlas

DOI: https://doi.org/10.1051/jp4:2001329

Low pressure chemical vapor deposition of Cu_xS p. Pr3-239

B. Meester, L. Reijnen, F. de Lange, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:2001330

Perovskite heterostructures grown by MOCVD p. Pr3-247

O.Yu. Gorbenko, I.E. Graboy, M.A. Novozhilov, A.R. Kaul, G. Wahl et V.L. Svetchnikov

DOI: https://doi.org/10.1051/jp4:2001331

Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4 p. Pr3-255

Y. Shimamune, M. Sakuraba, T. Matsuura et J. Murota

DOI: https://doi.org/10.1051/jp4:2001332

Organic chemistry by CVD p. Pr3-261

L. He, M.L. Hitchman, S.H. Shamlian et S.E. Alexandrov

DOI: https://doi.org/10.1051/jp4:2001333

Molecular magnets and conductors on surfaces p. Pr3-271

H. Casellas, D. de Caro, L. Valade et L. Ariès

DOI: https://doi.org/10.1051/jp4:2001334

Modification of activated carbon fiber pore structure by coke deposition p. Pr3-279

X. Dabou, P. Samaras et G.P. Sakellaropoulos

DOI: https://doi.org/10.1051/jp4:2001335

Properties of thin AIN films prepared by PECVD and rapid thermal processes p. Pr3-287

G.D. Beshkov, S.S. Georgiev, K.G. Grigorov, H.S. Maciel, A. Djouadi et M. Marinov

DOI: https://doi.org/10.1051/jp4:2001336

CVD growth of silicon films at high rates p. Pr3-293

M. Hofstätter, B. Atakan et K. Kohse-Höinghaus

DOI: https://doi.org/10.1051/jp4:2001337

Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressure p. Pr3-301

A. Slaoui et S. Bourdais

DOI: https://doi.org/10.1051/jp4:2001338

An extended interpretation of chemical vapor infiltration of carbon p. Pr3-307

Z.J. Hu, W.G. Zhang et K.J. Hüttinger

DOI: https://doi.org/10.1051/jp4:2001339

Structural and morphological changes in low temperature annealed LPCVD Si layers p. Pr3-315

B. Cobianu, M. Modreanu, M. Danila, R. Gavrila, M . Bercu et M. Gartner

DOI: https://doi.org/10.1051/jp4:2001340

Growth of Ru and RuO₂ films by metal-organic chemical vapour deposition p. Pr3-325

F. Fröhlich, D. Machajdik, V. Cambel, J. Fedor, A. Pisch et J. Lindner

DOI: https://doi.org/10.1051/jp4:2001341

Growth of magnetoresistant La_1-xMnO₃ films on r-plane cut sapphire p. Pr3-333

K. Fröhlich, M. Pripko, I. Vávra, K. Dénešová et D. Machajdík

DOI: https://doi.org/10.1051/jp4:2001342

Structural properties of [(La_0.7Sr_0.3MnO₃/SrTiO₃)]₁₅ superlattices prepared by pulsed injection-MOCVD p. Pr3-341

M. Rosina, C. Dubourdieu, F. Weiss, J.P. Sénateur et K. Fröhlich

DOI: https://doi.org/10.1051/jp4:2001343

Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsine p. Pr3-349

F. Maury et E. Bedel-Pereira

DOI: https://doi.org/10.1051/jp4:2001344

Treatment of polyethylene terephthalate in a He glow discharge p. Pr3-357

D.D. Papakonstantinou, D. Mataras et Arefi-Khonsari

DOI: https://doi.org/10.1051/jp4:2001345

Photodegradative properties of TiO₂ films prepared by MOCVD p. Pr3-363

I. Justicia, J.A. Ayllón, A. Figueras, G.A. Battiston et R. Gerbasi

DOI: https://doi.org/10.1051/jp4:2001346

Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. Pr3-371

D.E. Whitehead, M.E. Pemble, H.M. Yates, A. Blanco, C. Lopez, H. Miguez et F.J. Meseguer

DOI: https://doi.org/10.1051/jp4:2001347

Tin oxide APCVD thin films grown by SnCl₄ oxidation on glass and Si substrates in a cold wall reactor p. Pr3-377

A. Koutsogianni et D. Tsamakis

DOI: https://doi.org/10.1051/jp4:2001348

Preparation and optical study of APCVD mixed metal oxide films p. Pr3-385

T. Ivanova, K.A. Gesheva, A. Szekeres, A. Maksimov et S. Zaitzev

DOI: https://doi.org/10.1051/jp4:2001349

Processing of (PyC/TiC)_n multilayered coatings by pulsed CVD and RCVD p. Pr3-391

O. Rapaud, H. Vincent, C. Vincent, S. Jacques et J. Bouix

DOI: https://doi.org/10.1051/jp4:2001350

Carbon nanotubes by CVD and applications p. Pr3-401

A. Cassell, L. Delzeit, C. Nguyen, R. Stevens, J. Han et M. Meyyappan

DOI: https://doi.org/10.1051/jp4:2001351

Synthesis and characterization of carbon nanotubes p. Pr3-411

J. B. Nagy et A. Fonseca

DOI: https://doi.org/10.1051/jp4:2001352

Gas-phase stability of c-BN clusters p. Pr3-423

K. Larsson

DOI: https://doi.org/10.1051/jp4:2001353

Silicon oxide nanolayers for soft X-ray optics produced by plasma enhanced CVD p. Pr3-431

F. Hamelmann, A. Aschentrup, J. Schmalhorst, U. Kleineberg, U. Heinzmann, K. Dittmar et P. Jutzi

DOI: https://doi.org/10.1051/jp4:2001354

Nanoscale cobalt oxides thin films obtained by CVD and sol-gel routes p. Pr3-437

L. Armelao, D. Barreca, S. Gross et E. Tondello

DOI: https://doi.org/10.1051/jp4:2001355

Chemical vapour deposition - a promising method for production of different kinds of carbon nanotubes p. Pr3-445

A. Leonhardt, M. Ritschel, K. Bartsch, A. Graff, C. Täschner et J. Fink

DOI: https://doi.org/10.1051/jp4:2001356

Nanophased ZrO2-CeO2 or TiO2-ZrO2-CeO2 films by CVD as catalysts for hydrocarbon complete combustion p. Pr3-453

D. Barreca, G.A. Battiston, U. Casellato, R. Gerbasi, E. Roncari, E. Tondello et P. Zanella

DOI: https://doi.org/10.1051/jp4:2001357

Formation of cubic SiC nanocrystals by laser-assisted CVD p. Pr3-461

Y. Kamlag, A. Goossens, I. Colbeck et J. Schoonman

DOI: https://doi.org/10.1051/jp4:2001358

Nanocrystalline ZnO from siloxy-substituted single-source precursors p. Pr3-467

K. Merz, R. Schoenen et M. Driess

DOI: https://doi.org/10.1051/jp4:2001359

Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors p. Pr3-473

H. Parala, A. Devi, W. Rogge, A. Birkner et R.A. Fischer

DOI: https://doi.org/10.1051/jp4:2001360

Synthesis of nanocomposite Pd balls and wires by chemical vapor infiltration p. Pr3-481

K.-B. Lee, C.-S. Choi, S.J. Oh, H.-C.Ri et J. Cheon

DOI: https://doi.org/10.1051/jp4:2001361

Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVD p. Pr3-487

S. Mathur, M. Veith, V. Sivakov, H. Shen et H.-B. Gao

DOI: https://doi.org/10.1051/jp4:2001362

Advances in copper CVD for the semiconductor industry p. Pr3-497

J.A.T. Norman

DOI: https://doi.org/10.1051/jp4:2001363

General aspects of surface chemistry of metal β-diketonates p. Pr3-505

I.K. Igumenov, A.E. Turgambaeva et P.P. Semyannikov

DOI: https://doi.org/10.1051/jp4:2001364

Fundamental studies on the decomposition mechanism of Ti(OC₃H₇)₄ and TiO₂ film evolution on Si(100) and Pt(100) surfaces p. Pr3-517

S.-I. Cho, S.H. Moon et C.-H. Chung

DOI: https://doi.org/10.1051/jp4:2001365

Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor p. Pr3-525

B. Atakan et Z.-J. Liu

DOI: https://doi.org/10.1051/jp4:2001366

Direct liquid injection MOCVD growth of TiO₂ films using the precursor Ti(mpd)(dmae)₂ p. Pr3-531

A. Awaluddin, M.E. Pemble, A.C. Jones et P.A. Williams

DOI: https://doi.org/10.1051/jp4:2001367

Al₂O₃ growth optimisation using aluminium dimethylisopropoxide as precursor as a function of reaction conditions and reacting gases p. Pr3-539

D. Barreca, G.A. Battiston, G. Carta, R. Gerbasi, G. Rossetto, E. Tondello et P. Zanella

DOI: https://doi.org/10.1051/jp4:2001368

Synthesis of siloxy- and alkoxy-substituted ZnO-aggregates for CVS of ZnO p. Pr3-547

R. Schoenen, K. Merz, S. Rell et M. Driess

DOI: https://doi.org/10.1051/jp4:2001369

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac) p. Pr3-553

W. Zhuang, L.J. Charneski, D.R. Evans, S.T. Hsu, Z. Tang et A.M. Guloy

DOI: https://doi.org/10.1051/jp4:2001370

Metal and oxide thin film MO CVD as a base for nanostructure and superlattice formation p. Pr3-561

V.V. Bakovets, N.V. Gelfond, V.N. Mitkin, T.M. Levashova, I.P. Dolgovesova, V.T. Ratushnjak et V.G. Martynets

DOI: https://doi.org/10.1051/jp4:2001371

Chemical vapour deposition of copper using copper(II) alkoxides p. Pr3-569

R. Becker, J. Weiß, A. Devi et R.A. Fischer

DOI: https://doi.org/10.1051/jp4:2001372

Growth of InN whiskers from single source precursor p. Pr3-577

A. Devi, H. Parala, W. Rogge, A. Wohlfart, A. Birkner et R.A. Fischer

DOI: https://doi.org/10.1051/jp4:2001373

New volatile polyazolylborates of copper(I) for MOCVD p. Pr3-585

A. Drozdov, S.I. Troyanov, C. Pettinari, F. Marchetti, C. Santini, R. Pettinari, G.A. Battiston et R. Gerbasi

DOI: https://doi.org/10.1051/jp4:2001374

MO CVD obtaining composite coatings from metal of platinum group on titanium electrodes p. Pr3-593

N.V. Gelfond, P.S. Galkin, I. K. Igumenov, N.B. Morozova, N.E. Fedotova, G.I. Zharkova et Yu.V. Shubin

DOI: https://doi.org/10.1051/jp4:2001375

MOCVD of rhenium-containing complex oxides with the new thd-precursor p. Pr3-601

O.Yu. Gorbenko, S.I. Troyanov, A.A. Zakharov et A.A. Bosak

DOI: https://doi.org/10.1051/jp4:2001376

Vapor pressure of precursors for CVD on the base of platinum group metals p. Pr3-609

N.B. Morozova, G.I. Zharkova, P.P. Semyannikov, S.V. Sysoev, I.K. Igumenov, N.E. Fedotova et N.V. Gelfond

DOI: https://doi.org/10.1051/jp4:2001377

Investigation of composition, optical and electrophysical properties of tin dioxide films made by oxidative pyrolysis of tetraethyltin p. Pr3-617

B. Kozyrkin

DOI: https://doi.org/10.1051/jp4:2001378

Thermal conversions of some Ba, Sr, Ti oxide precursors for CVD p. Pr3-621

A.E. Turgambaeva et I.K. Igumenov

DOI: https://doi.org/10.1051/jp4:2001379

CVD deposition of cobalt oxide (CO₃O₄) from Co(acac)₂ p. Pr3-629

E. Fischer Rivera, B. Atakan et K. Kohse-Höinghaus

DOI: https://doi.org/10.1051/jp4:2001380

Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate p. Pr3-637

A.U. Mane, K. Shalini et S.A. Shivashankar

DOI: https://doi.org/10.1051/jp4:2001381

MOCVD of Ag thin films p. Pr3-645

S. Paramonov, S. Samoilenkov, S. Papucha, I. Malkerova, A. Alikhanyan, N. Kuzmina, S.I. Troyanov et A.R. Kaul

DOI: https://doi.org/10.1051/jp4:2001382

Deposition by an aerosol assisted MOCVD process of Eu or Er doped Y₂O₃-P₂O₅ thin films p. Pr3-653

J.L. Deschanvres et W. Meffre

DOI: https://doi.org/10.1051/jp4:2001383

Volatility studies on single source precursors for LaNiO3 film deposition: Mass spectrometry and thermal analysis p. Pr3-661

N. Kuzmina, I. Malkerova, M. Ryazanov, A. Alikhanyan, A. Rogachev et A.N. Gleizes

DOI: https://doi.org/10.1051/jp4:2001384

Characterization of a solvant-free vapour source for MOCVD p. Pr3-669

C. Jimenez, H. Guillon, B. Pierret, O. Stadel, J. Schmidt, U. Krause et G. Wahl

DOI: https://doi.org/10.1051/jp4:2001385

Influence of thermal decomposition behavior of titanium precursors on (Ba,Sr)TiO₃ thin films p. Pr3-675

Y.S. Min, Y.J. Cho, D. Kim, J.H. Lee, B.M. Kim, S.K. Lim, I.M. Lee et W.I. Lee

DOI: https://doi.org/10.1051/jp4:2001386

Growth of porous columnar α-GaN layers on c-plane Al₂O₃ by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor p. Pr3-683

A. Wohlfart, A. Devi, F. Hipler, H.W. Becker et R.A. Fischer

DOI: https://doi.org/10.1051/jp4:2001387

Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources: Mechanism of the process and properties of resulting silicon-carbon deposits p. Pr3-691

A.M. Wrobel

DOI: https://doi.org/10.1051/jp4:2001388

Photon assisted CVD p. Pr3-703

K. Piglmayer, M. Boman, M. Lindstam et R. Chabicovsky

DOI: https://doi.org/10.1051/jp4:2001389

Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin films p. Pr3-715

E. Amanatides, D.E. Rapakoulias et D. Mataras

DOI: https://doi.org/10.1051/jp4:2001390

Microwave plasma enhanced CVD of aluminum oxide films: Influence of the deposition parameter on the films characteristics p. Pr3-723

H. Hidalgo, P. Tristant, A. Denoirjean et J. Desmaison

DOI: https://doi.org/10.1051/jp4:2001391

Comparative characterization of nitrogen-rich CN_x films prepared by different ICP-CVD techniques p. Pr3-731

C. Popov, J. Bulir, L. Zambov, M. Jelinek et M.-P. Delplancke-Ogletree

DOI: https://doi.org/10.1051/jp4:2001392

GeO₂ and SiO₂ thin film preparation with CVD using ultraviolet excimer lamps p. Pr3-739

K. Kurosawa, Y. Maezono, J.-I. Miyano, T. Motoyama et A. Yokotani

DOI: https://doi.org/10.1051/jp4:2001393

Room temperature SiO₂ films deposited by multipolar ECR PECVD p. Pr3-747

G. Isai, A. Kovalgin, J. Holleman, P. Woerlee et H. Wallinga

DOI: https://doi.org/10.1051/jp4:2001394

Aluminium nitride synthesis by RPECVD p. Pr3-755

T. Belmonte, J.Y. Poussardin, L. Lefèvre et H. Michel

DOI: https://doi.org/10.1051/jp4:2001395

Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structure p. Pr3-763

G.C. Chen, M.C. Kim, T.H. Kim, S.-B. Lee et J.-H. Boo

DOI: https://doi.org/10.1051/jp4:2001396

RMPECVD of silica films with a high microwave power (1600 W) parametric studies p. Pr3-771

P. Tristant, J. Desmaison, F. Naudin et D. Merle

DOI: https://doi.org/10.1051/jp4:2001397

Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges p. Pr3-779

A. Hammad, E. Amanatides, D.E. Rapakoulias et D. Mataras

DOI: https://doi.org/10.1051/jp4:2001398

Plasma enhanced decomposition of propylene on activated carbon fibers p. Pr3-787

T. Orfanoudaki, I. Dolios, S. Korili, P. Samaras, N. Platakis et G.P. Sakellaropoulos

DOI: https://doi.org/10.1051/jp4:2001399

Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor deposition p. Pr3-795

C. Shim, J. Yang, Y. C. Quan, J. Choi et D. Jung

DOI: https://doi.org/10.1051/jp4:20013100

Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method p. Pr3-803

P. Thévenin, A. Soltani et A. Bath

DOI: https://doi.org/10.1051/jp4:20013101

Room temperature deposition of GeO₂ thin film using dielectric barrier discharge driven excimer lamps p. Pr3-811

Y. Maezono, H. Yanagita, K. Nishi, J.-I. Miyano, A. Yokotani, K. Kurosawa, N. Hishinuma et H. Matsuno

DOI: https://doi.org/10.1051/jp4:20013102

Low frequency PACVD of silicon-carbon alloys : Process study p. Pr3-817

L. Thomas, J.M. Badie, E. Tomasella, M. Ducarroir et R. Berjoan

DOI: https://doi.org/10.1051/jp4:20013103

Selective area deposition of titanium dioxide thin films by light induced chemical vapour deposition p. Pr3-825

E. Halary-Wagner, P. Lambelet, G. Benvenuti et P. Hoffmann

DOI: https://doi.org/10.1051/jp4:20013104

Thermal barrier coatings p. Pr3-835

G. Wahl, Ch. Metz et S. Samoilenkov

DOI: https://doi.org/10.1051/jp4:20013105

Advances in chemically vapour deposited wear resistant coatings p. Pr3-847

S. Ruppi

DOI: https://doi.org/10.1051/jp4:20013106

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics p. Pr3-861

S. M. Zemskova, J. A. Haynes et K. M. Cooley

DOI: https://doi.org/10.1051/jp4:20013107

Yttrium containing aluminide layers p. Pr3-869

Ch. Metz, G. Wahl, P. Bianchi, M. Innocenti, D. Baxter, N. Archer et R. Wing

DOI: https://doi.org/10.1051/jp4:20013108

Fiber-coatings for fiber-reinforced mullite/mullite composites p. Pr3-877

K. Nubian, G. Wahl, B. Saruhan et H. Schneider

DOI: https://doi.org/10.1051/jp4:20013109

Coating of continuous carbon fibers with double layers by chemical vapor deposition p. Pr3-885

N. Popovska, S. Schmidt, E. Edelmann, V. K. Wunder, H. Gerhard et G. Emig

DOI: https://doi.org/10.1051/jp4:20013110

Wear behavior of PACVD tin coatings deposited onto tool steels p. Pr3-893

M. stoiber, G . Fontalvo, M. Panzenböck, C. Mitterer, C. Lugmair et R. Kullmer

DOI: https://doi.org/10.1051/jp4:20013111

Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method p. Pr3-901

A. Izumi, H. Sato et H. Matsumura

DOI: https://doi.org/10.1051/jp4:20013112

Investigation of the tantalum chlorination with hydrogen chloride for LPCVD tantalum elaboration p. Pr3-907

A. Levesque et A. Bouteville

DOI: https://doi.org/10.1051/jp4:20013113

Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. Pr3-915

A. Levesque et A. Bouteville

DOI: https://doi.org/10.1051/jp4:20013114

In situ characterization of atomic layer deposition of SrTiO₃ p. Pr3-923

A. Rahtu, T. Hänninen et M. Ritala

DOI: https://doi.org/10.1051/jp4:20013115

MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors p. Pr3-931

W.-C. Liu, H.-J. Pan, C.-H. Yen, K.-P. Lin, C.-Z. Wu, W.-H. Chiou et C.-Y. Chen

DOI: https://doi.org/10.1051/jp4:20013116

Development of SiNx LPCVD processes for microtechnological applications p. Pr3-937

B. Rousset, L. Furgal, P. Fadel, A. Fulop, D. Pujos et P. Temple-Boyer

DOI: https://doi.org/10.1051/jp4:20013117

High-performance In_0.49Ga_0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMT's) p. Pr3-945

W.-C. Liu, K.-W. Lin, K.-H. Yu, W.-L. Chang, C.-C. Cheng, C.-K. Wang et H.-M. Chang

DOI: https://doi.org/10.1051/jp4:20013118

MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations p. Pr3-951

W.-C. Liu, K.-H. Yu, K.-W. Lin, K.-P. Lin, C.-H. Yen, C.-C. Cheng, C.-K. Wang et H.-M. Chuang

DOI: https://doi.org/10.1051/jp4:20013119

A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior p. Pr3-957

W.-C. Liu, W.-C. Wang, C.-H. Yen, C.-C. Cheng, C.-Z. Wu, W.-H. Chiou et C.-Y. Chuen

DOI: https://doi.org/10.1051/jp4:20013120

Characterisation of LPCVD silicon oxynitride films by optical spectroscopy p. Pr3-963

M. Bercu, C. Cobianu, M. Modreanu et B.N. Bercu

DOI: https://doi.org/10.1051/jp4:20013121

Characterization of the core structure of growth defects in CVD diamond films by UHREM : Z-shaped twin interactions p. Pr3-971

D. Dorignac, S. Delclos, F. Phillipp, F. Silva et A. Gicquel

DOI: https://doi.org/10.1051/jp4:20013122

Structure study of thin RPECVD Cd_xZn_1-xS films p. Pr3-979

N.I. Fainer, M.L. Kosinova, Yu.M. Rumyantsev, E.A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N.P. Sysoeva et F.A. Kuznetsov

DOI: https://doi.org/10.1051/jp4:20013123

Structure and composition investigation of RPECVD SiCN and LPCVD BCN films p. Pr3-987

M.L. Kosinova, N.I Fainer, Yu.M. Rumyantsev, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka et F.A. Kuznetsov

DOI: https://doi.org/10.1051/jp4:20013124

In situ mass spectrometry during thermal CVD of the tris-acetylacetonates of 3-d transition metals p. Pr3-995

P.P. Semyannikov, I.K. Igumenov, S.V. Trubin et I.P. Asanov

DOI: https://doi.org/10.1051/jp4:20013125

Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition p. Pr3-1005

L.M. Zambov, B. Ivanov, C. Popov, G. Georgiev, I. Stoyanov et D.B. Dimitrov

DOI: https://doi.org/10.1051/jp4:20013126

Deposition process of laminar pyrocarbon from propane p. Pr3-1013

J. Lavenac, F. Langlais, X. Bourrat et R. Naslain

DOI: https://doi.org/10.1051/jp4:20013127

APCVD-molybdenum oxide thin films : Vibrational and optical properties p. Pr3-1023

K.A. Gesheva, T. Ivanova, A. Szekeres, A. Maksimov et S. Zaitzev

DOI: https://doi.org/10.1051/jp4:20013128

Influence of texture on the absorption threshold of LPCVD silicon films p. Pr3-1029

D. Davazoglou, D.N. Kouvatsos et E. Valamontes

DOI: https://doi.org/10.1051/jp4:20013129

Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS p. Pr3-1037

D.N. Kouvatsos, V.Em. Vamvakas et D. Davazoglou

DOI: https://doi.org/10.1051/jp4:20013130

MOCVD of antimony oxides for gas sensor applications p. Pr3-1045

P. W. Haycock, G. A. Horley, K. C. Molloy, C. P. Myers, S. A. Rushworth et L. M. Smith

DOI: https://doi.org/10.1051/jp4:20013131

CVD techniques for gas separation membranes synthesis - characterization - applications p. Pr3-1053

J. Durand et V. Rouessac

DOI: https://doi.org/10.1051/jp4:20013132

Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition p. Pr3-1065

S. Oda et K. Nishiguchi

DOI: https://doi.org/10.1051/jp4:20013133

Group-III nitride growth in production scale MOVPE systems p. Pr3-1073

B. Schineller, H. Protzmann, M. Luenenbuerger, M. Heuken, E.V. Lutsenko et G.P. Yablonskii

DOI: https://doi.org/10.1051/jp4:20013134

Atomic layer deposition of Cu_xS p. Pr3-1103

L. Reijnen, B. Meester, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:20013138

Study of SiO₂-films deposited by adding N₂O or O₂ to TEOS in photo-chemical vapor deposition at room temperature p. Pr3-1131

Y. Motoyama, J.-I. Miyano, K. Toshikawa, Y. Yagi, H. Yanagida, K. Kurosawa et A. Yokotani

DOI: https://doi.org/10.1051/jp4:20013142

The development of MOCVD techniques for ferroelectric and dielectric thin film depositions p. Pr3-1139

T. Li et S.T. Hsu

DOI: https://doi.org/10.1051/jp4:20013143

Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films p. Pr3-1147

B. Meester, L. Reijnen, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:20013144

NIR diode laser based process control for industrial CVD reactors p. Pr3-1153

V. Hopfe, D.W. Sheel, D. Raisbeck, J. M. Rivero, W. Graehlert, O. Throl, A.M.B. van Mol et C.I.M.A. Spee

DOI: https://doi.org/10.1051/jp4:20013145

Unique precursor delivery and control afforded by low-pressure pulsed-CVD process with ultrasonic atomization p. Pr3-1161

S. Krumdieck, O. Sbaizero et R. Raj

DOI: https://doi.org/10.1051/jp4:20013146

Deposition of SrRuO₃ films and SrRuO₃/YBa₂Cu₃O₇ heterostructures by pulsed injection MOCVD p. Pr3-1169

A. Abrutis, V. Plausinaitiene, S. Pasko, A. Teiserskis, V. Kubilius, Z. Saltyte et J.-P. Sénateur

DOI: https://doi.org/10.1051/jp4:20013147

GaN heteroepitaxy by remote plasma MOCVD : Real time monitoring by laser reflectance interferometry p. Pr3-1175

M. Losurdo, A. Grimaldi, M. Giangregorio, P. Capezzuto et G. Bruno

DOI: https://doi.org/10.1051/jp4:20013148

Area selective OMCVD of gold and palladium on self-assembled organic monolayers : Control of nucleation sites p. Pr3-1183

R.A. Fischer, U. Weckenmann, C. Winter, J. Käshammer, V. Scheumann et S. Mittler

DOI: https://doi.org/10.1051/jp4:20013149

CVD modifications of porous Vycor silica for gas separation and sensor applications p. Pr3-1191

E. Magoulianti, K. Beltsios, D. Davazoglou et N. Kanellopoulos

DOI: https://doi.org/10.1051/jp4:20013150

Fabrication of fine copper lines on AZ 5214^TM patterned silicon substrates by selective chemical vapor deposition p. Pr3-1197

A.N. Gleizes, S. Vidal et D. Davazoglou

DOI: https://doi.org/10.1051/jp4:20013151

Le Journal de Physique IV

Volume 11 / Numéro PR3 (Août 2001)

Thirteenth European Conference on Chemical Vapor Deposition

Thermodynamic, kinetic and mass transport calculations, as the basis for materials processing by CVD p. Pr3-3

Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation : A powerful technique p. Pr3-17

The growth kinetics study of CVD Cu on TiN barriers p. Pr3-23

The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors p. Pr3-31

Thermodynamic and kinetic criteria to select hydrocarbon precursor p. Pr3-39

A study of morphology and texture of LPCVD germanium-silicon films p. Pr3-47

Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios p. Pr3-55

Density functional study on the adsorption of DMAH on hydrogen terminated Si(111) surfaces p. Pr3-63

(HFA)Cu . 1,5-COD as the prospective precursor for CVD-technologies : The electronic structure, thermodynamical properties and process of formation of thin copper films p. Pr3-69