| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-385 - Pr3-390 | |
| DOI | https://doi.org/10.1051/jp4:2001349 | |
J. Phys. IV France 11 (2001) Pr3-385-Pr3-390
DOI: 10.1051/jp4:2001349
Preparation and optical study of APCVD mixed metal oxide films
T. Ivanova1, K.A. Gesheva1, A. Szekeres2, A. Maksimov3 and S. Zaitzev31 Central Laboratory of Solar Energy and New Energy Sources, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
2 Institute of Solid State Physics, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
3 Institute of Solid State Physics, 142432 Moscow Area, Chernogolovka, Russia
Abstract
Mixed metal oxides based on MoO3 and WO3 are prepared by chemical vapor deposition (CVD) using a precursor-mixture of Mo(CO)6 and W(CO)6 powders. By pyrolytical decomposition of the mixed vapors at atmospheric pressure in presence of oxygen, thin films were deposited on silicon substrates at 200°C. The films were characterized by Raman, IR and Ellipsometric Spectroscopies. In as-deposited form the films are amorphous as revealed by Raman spectra. Post-deposition annealing at 200 and 300°C does not significantly change the vibrational and optical properties. Annealing at 400 and 500°C leads to predominantly amorphous structure with appearing of crystalline phase. The character of the absorption spectra and the values of the optical energy bandgap (2.57-2.66 eV) suggest that the CVD-MoO3-WO3 oxide films have highly defective structure.
© EDP Sciences 2001