| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-1169 - Pr3-1173 | |
| DOI | https://doi.org/10.1051/jp4:20013147 | |
J. Phys. IV France 11 (2001) Pr3-1169-Pr3-1173
DOI: 10.1051/jp4:20013147
Deposition of SrRuO3 films and SrRuO3/YBa2Cu3O7 heterostructures by pulsed injection MOCVD
A. Abrutis1, V. Plausinaitiene1, S. Pasko1, A. Teiserskis1, V. Kubilius1, Z. Saltyte1 and J.-P. Sénateur21 Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania
2 LMGP, ENSPG, INPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
Abstract
Single liquid source pulsed injection MOCVD technique was applied for the deposition of epitaxial SrRuO3 films and SrRuO3/YBa2Cu3O7 heterostructures on various monocrystalline substrates (LaAlO3, SrTiO3, NdGaO3, MgO, YSZ, sapphire). Sr, Y, Ba, Cu 2,2,6,6-tetramethyl-3,5-heptanedionates and Ru 2,4-pentanedionate (acetylacetonate) were used as precursor materials, 1,2-dimethoxyethane as a solvent. Deposition conditions were optimised to obtain epitaxial films and heterostructures and the influence of substrate material on films' microstructure and electrical properties was studied. The best SrRuO3/YBa2Cu3O7 heterostructures which were in situ deposited at 825 °C exhibited rather sharp superconducting transition at about 91 K and critical current density >106 A/cm2 at 77 K.
© EDP Sciences 2001