Advances in the use of MOCVD methods for the production of novel photonic bandgap materials

D.E. Whitehead; M.E. Pemble; H.M. Yates; A. Blanco; C. Lopez; H. Miguez; F.J. Meseguer

doi:doi:10.1051/jp4:2001347

Numéro		J. Phys. IV France Volume 11, Numéro PR3, Août 2001 Thirteenth European Conference on Chemical Vapor Deposition


Page(s)		Pr3-371 - Pr3-376
DOI		https://doi.org/10.1051/jp4:2001347

Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-371-Pr3-376
DOI: 10.1051/jp4:2001347

Advances in the use of MOCVD methods for the production of novel photonic bandgap materials

D.E. Whitehead¹, M.E. Pemble¹, H.M. Yates¹, A. Blanco², C. Lopez², H. Miguez^{2, 3} and F.J. Meseguer^{2, 3}

¹ School of Sciences, University of Salford, Salford M5 4WT, U.K.
² Instituto de Ciencia de Materiales de Madrid (CSIC), Campus de Cantoblanco, 28049 Madrid, Spain
³ Departamento de Fisica Aplicada, Universidad Politecnica de Valencia 46022 Valencia, Spain

Abstract
We describe the use of novel MOCVD methods designed to infill templated structures based upon synthetic opals in order to provide increased refractive index contrast necessary for the creation of full photonic bandgap materials. The method employed is illustrated by considering the production of structures containing III-V material GaP and using this example, we demonstrate the ability to achieve levels of infil1 higher than any previously reported. We describe the use of novel MOCVD chemistry in the creation of a potentially new class of inorganic material, potentially capable of direct luminescence from within the photonic bandgap system.