| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-951 - Pr3-955 | |
| DOI | https://doi.org/10.1051/jp4:20013119 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-951-Pr3-955
DOI: 10.1051/jp4:20013119
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, l University Road, Tainan, Taiwan 70101, Republic of China
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-951-Pr3-955
DOI: 10.1051/jp4:20013119
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
W.-C. Liu, K.-H. Yu, K.-W. Lin, K.-P. Lin, C.-H. Yen, C.-C. Cheng, C.-K. Wang and H.-M. ChuangInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, l University Road, Tainan, Taiwan 70101, Republic of China
Abstract
A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1x100 µm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 µA/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.
© EDP Sciences 2001