| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-333 - Pr3-339 | |
| DOI | https://doi.org/10.1051/jp4:2001342 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-333-Pr3-339
DOI: 10.1051/jp4:2001342
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84239 Bratislava, Slovak Republic
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-333-Pr3-339
DOI: 10.1051/jp4:2001342
Growth of magnetoresistant La1-xMnO3 films on r-plane cut sapphire
K. Fröhlich, M. Pripko, I. Vávra, K. Dénesová and D. MachajdíkInstitute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84239 Bratislava, Slovak Republic
Abstract
We have prepared thin La1-xMnO3 films on r-plane cut sapphire by liquid source MOCVD. Tetramethylheptadionates of La and Mn (La(thd)3 and Mn(thd)3) were used as precursors and diethyleneglycol dimethyl ether as a solvent. The films were grown at deposition temperature TD = 800 °C . Temperature dependence of resistivity of the films was typical as for epitaxial films, with insulator-metal transition between 260 and 300 K and sharp decrease of the resistivity below. X-ray diffraction analysis show (100) and (110) preferred orientation of the film. Transition electron microscopy revealed epitaxial grains with grain size about 100 nm distributed in polycrystalline matrix.
© EDP Sciences 2001