Morphology and Film Growth in CVD Reactions p. C5-3 V. Hlavacek, J.J. Thiart and D. Orlicki DOI: https://doi.org/10.1051/jphyscol:1995501 PDF (1.547 MB)
Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process p. C5-45 S. Berg and C. Nender DOI: https://doi.org/10.1051/jphyscol:1995502 PDF (342.3 KB)
Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy p. C5-55 L. Vescan, R. Loo, A. Souifi, C. Dieker and S. Wickenhäuser DOI: https://doi.org/10.1051/jphyscol:1995503 PDF (2.036 MB)
Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex p. C5-63 M. Pons, E. Blanquet, C. Bernard, H. Rouch, J.M. Dedulle and R. Madar DOI: https://doi.org/10.1051/jphyscol:1995504 PDF (323.0 KB)
Kinetic Modeling of the Gas Phase Decomposition of Germane by Computational Chemistry Techniques p. C5-71 M. Hierlemann, H. Simka, K.F. Jensen and M. Utz DOI: https://doi.org/10.1051/jphyscol:1995505 PDF (333.1 KB)
Thermodynamic Analysis of the Chemical Vapor Deposition of Phosphorus Nitride (P3N5) Thin Films p. C5-79 S. Eroglu DOI: https://doi.org/10.1051/jphyscol:1995506 PDF (328.9 KB)
Metal-Containing Thin Film MOCVD : Kinetics and Reaction Mechanisms p. C5-87 I. Fragalà DOI: https://doi.org/10.1051/jphyscol:1995507 PDF (51.25 KB)
Mass Spectrometric Study of the Gas Phase During Chemical Vapor Deposition of Pyrolytic Carbon p. C5-89 F. Fau-Canillac, F. Carrere, A. Reynes, C. Vahlas and F. Maury DOI: https://doi.org/10.1051/jphyscol:1995508 PDF (357.9 KB)
Monitoring of SiC Deposition in an Industrial CVI/CVD Reactor by In-Situ FTIR Spectroscopy p. C5-97 H. Mosebach, V. Hopfe, M. Erhard and M. Meyer DOI: https://doi.org/10.1051/jphyscol:1995509 PDF (910.6 KB)
Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor p. C5-105 F. Langlais, F. Loumagne, D. Lespiaux, S. Schamm and R. Naslain DOI: https://doi.org/10.1051/jphyscol:1995510 PDF (1.181 MB)
On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2 p. C5-113 J.B. Rem, J.H. Klootwijk, C. Cobianu, J. Holleman and J.F. Verweij DOI: https://doi.org/10.1051/jphyscol:1995511 PDF (826.7 KB)
Deposition of Platinum from Bis(Acetylacetonato)Platinum(II) p. C5-119 J. Arndt, L. Klippe, R. Stolle and G. Wahl DOI: https://doi.org/10.1051/jphyscol:1995512 PDF (1.286 MB)
Experimental Design Approach to Development of a CVD ZrN Coating p. C5-127 W.C. Russell DOI: https://doi.org/10.1051/jphyscol:1995513 PDF (547.5 KB)
Silicon Carbide Coating for Carbon Materials Produced by a Pack-Cementation Process p. C5-135 O. Paccaud and A. Derré DOI: https://doi.org/10.1051/jphyscol:1995514 PDF (2.253 MB)
Chemical Vapour Deposition of Thick Tungsten Coatings : Raman Measurements and Mass Transport Modelling p. C5-143 M. Pons, A. Benezech, P. Huguet, R. Gaufres, Ph. Diez and D. Lafforet DOI: https://doi.org/10.1051/jphyscol:1995515 PDF (295.2 KB)
Thermodynamic Simulation of YBa2Cu3O6+x Film Growth Using Aerosol MOCVD p. C5-151 F. Weiss, A. Pisch, C. Bernard and U. Schmatz DOI: https://doi.org/10.1051/jphyscol:1995516 PDF (354.3 KB)
Modelling Binary, Knudsen and Transition Regime Diffusion Inside Complex Porous Media p. C5-159 G.L. Vignoles DOI: https://doi.org/10.1051/jphyscol:1995517 PDF (1.469 MB)
Kinetics of Chemical Vapour Deposition of Boron Nitride from a Gas Mixture of Trimethylborazine, Ammonia, and Hydrogen at 900 to 1050 °C and 1 Bar Total Pressure p. C5-167 A. Jörg, D. Neuschütz and E. Zimmermann DOI: https://doi.org/10.1051/jphyscol:1995518 PDF (682.5 KB)
Parameters of Vacuum Process as the Factors Changing the Growth Kinetics of Chromized Layers Produced on Low-Carbon Iron Alloys by Means of CVD p. C5-175 E. Kasprzycka DOI: https://doi.org/10.1051/jphyscol:1995519 PDF (586.5 KB)
A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy p. C5-183 S.E. Alexandrov, A.Y. Kovalgin and D.M. Krasovitskiy DOI: https://doi.org/10.1051/jphyscol:1995520 PDF (385.5 KB)
Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour p. C5-191 A.F. Bykov, A.E. Turgambaeva, I.K. Igumenov and P.P. Semyannikov DOI: https://doi.org/10.1051/jphyscol:1995521 PDF (347.9 KB)
Thermodynamics Aspects of Chemical Vapour Deposition of V-VII Group Metals and their Alloys with Tungsten p. C5-199 Y.V. Lakhotkin DOI: https://doi.org/10.1051/jphyscol:1995522 PDF (238.2 KB)
Mechanism of Thermal Decomposition of Palladium β-Diketonates Vapour on Hot surface p. C5-205 P.P. Semyannikov, V.M. Grankin, I.K. Igumenov and A.F. Bykov DOI: https://doi.org/10.1051/jphyscol:1995523 PDF (343.7 KB)
Mechanism of Interaction of Dimethylgold(III) Chelates Vapour with Hot Surface p. C5-213 P.P. Semyannikov, V.M. Grankin, I.K. Igumenov and G.I. Zharkova DOI: https://doi.org/10.1051/jphyscol:1995524 PDF (353.4 KB)
Mass Spectrometric Study of Copper(II) β-Diketonates Vapour Thermolysis Mechanism and Kinetics p. C5-221 A.E. Turgambaeva, A.F. Bykov and I.K. Igumenov DOI: https://doi.org/10.1051/jphyscol:1995525 PDF (348.1 KB)
Deposition Kinetics of CVD-Silicon Carbonitride Coatings p. C5-229 A.G. Varliamov and S.V. Afanas'eva DOI: https://doi.org/10.1051/jphyscol:1995526 PDF (220.0 KB)
CVD as Laminar Phenomena with Homogeneous/Heterogeneous Appearances. A Theoretical Analysis p. C5-235 K.T. Raic DOI: https://doi.org/10.1051/jphyscol:1995527 PDF (333.3 KB)
Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor p. C5-245 H. Siimon and J. Aarik DOI: https://doi.org/10.1051/jphyscol:1995528 PDF (309.7 KB)
Simulation of Chemical Vapour Deposition of SiC from Methyltrichlorosilane in a Hot Wall Reactor p. C5-253 D. Neuschütz, M. Schierling and S. Zimdahl DOI: https://doi.org/10.1051/jphyscol:1995529 PDF (325.2 KB)
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors p. C5-261 M. Masi, S. Fogliani and S. Carrà DOI: https://doi.org/10.1051/jphyscol:1995530 PDF (775.7 KB)
Optimum Design of LPCVD Reactors p. C5-269 L.M. Zambov DOI: https://doi.org/10.1051/jphyscol:1995531 PDF (288.8 KB)
Reactivities of TaCl5 and H2O as Precursors for Atomic Layer Deposition p. C5-277 H. Siimon and J. Aarik DOI: https://doi.org/10.1051/jphyscol:1995532 PDF (240.3 KB)
Systematic Classification of LPCVD Processes p. C5-283 J. Schlote, K. Tittelbach-Helmrich, B. Tillack, B. Kuck and T. Hünlich DOI: https://doi.org/10.1051/jphyscol:1995533 PDF (363.8 KB)
Low Pressure CVD of Silicon Nitride from a Silane-Ammonia Mixture : Analysis of Preliminary Experimental and Simulation Results p. C5-291 K. Yacoubi, C. Azzaro and J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:1995534 PDF (392.5 KB)
Wall-Less Like Reactor : Simulation and Experimental Results p. C5-299 C. Bisch, Y.B. Wang and F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995535 PDF (1007 KB)
Reactor Modelling and Analysis of Amorphous Hydrogenated Silicon Deposition by PECVD p. C5-307 A. Djelloul, B. Despax, J.P. Couderc and P. Duverneuil DOI: https://doi.org/10.1051/jphyscol:1995536 PDF (866.6 KB)
SIPOS Deposition from Disilane : Experimental Study and Modelling p. C5-315 C. Cordier, E. Dehan, E. Scheid, P. Duverneuil and J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:1995537 PDF (382.9 KB)
Economical Analysis and Optimization of a Low Pressure Chemical Vapor Depositioni (LPCVD) Reactor p. C5-323 T. Tamani, P. Duverneuil and J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:1995538 PDF (294.3 KB)
Modelling of the Deposition of Molybdenum on Silicon from Molybdenum Hexafluoride and Hydrogen p. C5-331 E.N. Orij, M.H.J.M. de Croon and G.B. Marin DOI: https://doi.org/10.1051/jphyscol:1995539 PDF (833.4 KB)
Formation of Ti(OCN) Layers Under Glow Discharge Conditions p. C5-339 J.R. Sobiecki and T. Wierzchon DOI: https://doi.org/10.1051/jphyscol:1995540 PDF (1.613 MB)
Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors p. C5-347 A. Figueras DOI: https://doi.org/10.1051/jphyscol:1995541 PDF (424.0 KB)
A study by In Situ FTIR Spectroscopy of the Decomposition of Precursors for the MOCVD of High Temperature Superconductors p. C5-357 A.Y. Kovalgin, F. Chabert-Rocabois, M.L. Hitchman, S.H. Shamlian and S.E. Alexandrov DOI: https://doi.org/10.1051/jphyscol:1995542 PDF (317.4 KB)
High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD p. C5-365 C. Dubourdieu, J.P. Sénateur, O. Thomas and F. Weiss DOI: https://doi.org/10.1051/jphyscol:1995543 PDF (1.573 MB)
Barium Diketonates as Precursors for HTSC Thin Films : Structure and Properties p. C5-373 A. Drozdov and S. Troyanov DOI: https://doi.org/10.1051/jphyscol:1995544 PDF (156.2 KB)
Atomic Layer-by-Layer MOCVD of Oxide Superconductors p. C5-379 S. Oda, S. Yamamoto and A. Kawaguchi DOI: https://doi.org/10.1051/jphyscol:1995545 PDF (1.971 MB)
MOCVD Routes to Tl2Ba2Can-1CunO4+2nSuperconductor and Dielectric Insulator Thin Films p. C5-391 B.J. Hinds, D.B. Studebaker, J. Chen, R.J. McNeely, B. Han, J.L. Schindler, T.P. Hogan, C.R. Kannewurf and T.J. Marks DOI: https://doi.org/10.1051/jphyscol:1995546 PDF (1.296 MB)
MOCVD of High Quality YBa2Cu3O7-δ Thin Films Using Novel Fluorinated and Non-Fluorinated Precursors p. C5-407 B.C. Richads, S.L. Cook, D.L. Pinch and G.W. Andrews DOI: https://doi.org/10.1051/jphyscol:1995547 PDF (776.3 KB)
Compositional Effects on Morphology, Structure and Superconducting Properties of YxBay CuzO7-δ Thin Films Prepared by Metalorganic Chemical Vapour Deposition p. C5-415 M. Doudkowsky, J. Santiso, A. Figueras and R. Berjoan DOI: https://doi.org/10.1051/jphyscol:1995548 PDF (1.011 MB)
Growth of (YBaCuO)m/(PrBaCuO)n Superlattices by MOCVD p. C5-423 N. Didier, B. Chenevier, O. Thomas, J.P. Sénateur, F. Weiss and A. Gaskov DOI: https://doi.org/10.1051/jphyscol:1995549 PDF (893.1 KB)
Physico-Chemical Study of Barium (II) Dipivaloylmethanate Nature p. C5-431 N.E. Fedotova, I.K. Igumenov, V.I. Mamatyuk and G.V. Sidorenko DOI: https://doi.org/10.1051/jphyscol:1995550 PDF (330.0 KB)
Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film p. C5-439 G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, A. Figueras, S. Schamm, D. Dorignac, Ch. Grigis and M. Aguilò DOI: https://doi.org/10.1051/jphyscol:1995551 PDF (1.472 MB)
Recent Trends in the Selection of Metal-Organic Precursors for MOCVD Process p. C5-449 F. Maury DOI: https://doi.org/10.1051/jphyscol:1995552 PDF (836.5 KB)
Nickel Thin Films Grown by MOCVD Using Ni(dmg)2 as Precursor p. C5-465 M. Becht, J. Gallus, M. Hunziker, F. Atamny and K.-H. Dahmen DOI: https://doi.org/10.1051/jphyscol:1995553 PDF (291.4 KB)
Vanadium Oxi-Carbide Coatings Deposited by OMCVD in an Isothermal Reactor p. C5-473 L. Poirier and F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995554 PDF (1.160 MB)
Growth of InP in a Novel Remote-Plasma MOCVD Apparatus : an Approach to Improve Process and Material Properties p. C5-481 G. Bruno, P. Capezzuto and M. Losurdo DOI: https://doi.org/10.1051/jphyscol:1995555 PDF (347.9 KB)
MO CVD of Noble Metals p. C5-489 I.K. Igumenov DOI: https://doi.org/10.1051/jphyscol:1995556 PDF (358.3 KB)
Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings p. C5-497 A. Grafov, E. Mazurenko, G.A. Battiston and P. Zanella DOI: https://doi.org/10.1051/jphyscol:1995557 PDF (672.6 KB)
New Barium Volatile Complexes Useful in CVD p. C5-503 A. Drozdov, S. Troyanov, A. Pisarevsky and Y. Struchkov DOI: https://doi.org/10.1051/jphyscol:1995558 PDF (183.5 KB)
Deposition of MoO3 Films from a Volatile Molybdenyl Complex p. C5-509 B. Ballarin, E. Brescacin, G.A. Rizzi and E. Tondello DOI: https://doi.org/10.1051/jphyscol:1995559 PDF (1.065 MB)
CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design p. C5-517 J.-L. Mermet, M.-J. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau and F. Braud DOI: https://doi.org/10.1051/jphyscol:1995560 PDF (678.2 KB)
Chemical Vapor Deposition of ZrO2 Thin Films Using Zr(NEt2)4 as Precursor p. C5-525 A. Bastianini, G.A. Battiston, R. Gerbasi, M. Porchia and S. Daolio DOI: https://doi.org/10.1051/jphyscol:1995561 PDF (727.7 KB)
Properties of Thin Epitaxial Aerosol MOCVD CeO2 Films Grown on (1102) Sapphire p. C5-533 K. Fröhlich, J. Souc, D. Machajdík, A.P. Kobzev, F. Weiss, J.P. Senateur and K.H. Dahmen DOI: https://doi.org/10.1051/jphyscol:1995562 PDF (308.0 KB)
Structure and Destruction of a Precursor : Mass-Spectrometric Evaluation of Creation of Functional Films with Predeterminated Composition p. C5-541 A. Grafov, I.A. Grafova, E. Mazurenko, L.I. Koval, S. Catinella, P. Traldi, G.A. Battiston and P. Zanella DOI: https://doi.org/10.1051/jphyscol:1995563 PDF (357.3 KB)
Volatile Metals Coordination Compounds as Precursors for Functional Materials Synthesis by CVD-Method p. C5-547 E.A. Mazurenko and A.I. Gerasimchuk DOI: https://doi.org/10.1051/jphyscol:1995564 PDF (227.9 KB)
CVD Synthesis of HTSC Films Using Volatile Coordination Compounds p. C5-553 S.V. Volkov, V.Y. Zub, O.N. Balakshina and E.A. Mazurenko DOI: https://doi.org/10.1051/jphyscol:1995565 PDF (165.1 KB)
A New Route to the Deposition of Al2O3 by MOCVD p. C5-557 A.C. Jones, D.J. Houlton, S.A. Rushworth and G.W. Critchlow DOI: https://doi.org/10.1051/jphyscol:1995566 PDF (613.2 KB)
CVD Conference Recollections p. C5-563 J.M. Blocher Jr. DOI: https://doi.org/10.1051/jphyscol:1995567 PDF (23.72 KB)
Remote PECVD : a Route to Controllable Plasma Deposition p. C5-567 S.E. Alexandrov DOI: https://doi.org/10.1051/jphyscol:1995568 PDF (747.6 KB)
Plasma-Assisted Deposition at Atmospheric Pressure p. C5-583 J. Salge DOI: https://doi.org/10.1051/jphyscol:1995569 PDF (1.757 MB)
Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates p. C5-593 C. Tixier, P. Tristant, J. Desmaison and D. Merle DOI: https://doi.org/10.1051/jphyscol:1995570 PDF (337.0 KB)
Laser-CVD 3D Rapid Prototyping of Laser Driven Moveable Micro-Objects p. C5-601 O. Lehmann and M. Stuke DOI: https://doi.org/10.1051/jphyscol:1995571 PDF (1.111 MB)
Optical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition p. C5-607 M. Andrieux, J.M. Badie, C. Bisch, M. Ducarroir and F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995572 PDF (1.336 MB)
Deposition and Properties of Thin PECVD Carbon Films After Rapid Thermal Annealing p. C5-615 G. Beshkov, D. Dimitrov, S. Georgiev and T. Dimitrova DOI: https://doi.org/10.1051/jphyscol:1995573 PDF (152.7 KB)
Remote Microwave Plasma Enhanced Chemical Vapour Deposition of SiO2 Films : Oxygen Plasma Diagnostic p. C5-621 C. Regnier, J. Desmaison, P. Tristant and D. Merle DOI: https://doi.org/10.1051/jphyscol:1995574 PDF (819.0 KB)
Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate p. C5-629 D. Tonneau, R. Pierrisnard, H. Dallaporta and W. Marine DOI: https://doi.org/10.1051/jphyscol:1995575 PDF (867.9 KB)
Deposition of Boron Containing Coatings Using MO-PACVD Process to Protect Aluminium Casting Tools p. C5-637 K.-T. Rie, A. Gebauer and C. Pfohl DOI: https://doi.org/10.1051/jphyscol:1995576 PDF (1.637 MB)
Laser CVD vs. Hot Wall CVD : Coating of Fibres for Ceramic Composites p. C5-647 V. Hopfe, K. Brennfleck, R. Weiß, R. Meistring, K. Schönfeld, R. Jäckel, G. Dietrich and R. Goller DOI: https://doi.org/10.1051/jphyscol:1995577 PDF (2.098 MB)
Principles for Controlling the Electronic Quality of High-Rate Deposited a-Si:H Films p. C5-655 G. Suchaneck, T. Blum, S. Röhlecke and A. Kottwitz DOI: https://doi.org/10.1051/jphyscol:1995578 PDF (314.6 KB)
On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates p. C5-663 G. Bruno, M. Losurdo and P. Capezzuto DOI: https://doi.org/10.1051/jphyscol:1995579 PDF (347.9 KB)
Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition p. C5-671 H. Masumoto and T. Hirai DOI: https://doi.org/10.1051/jphyscol:1995580 PDF (233.7 KB)
A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm p. C5-679 I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D.C. Dumitras, S. Mulenko, A. Pogorelyi and A. Andrei DOI: https://doi.org/10.1051/jphyscol:1995581 PDF (1.033 MB)
Direct Deposition of Metal Film Patterns Using Nitrogen Laser p. C5-687 E.F. Reznikova, V.V. Chesnokov, G.I. Zharkova and I.K. Igumenov DOI: https://doi.org/10.1051/jphyscol:1995582 PDF (2.459 MB)
The Study of the Boron Nitride Thin Layer Structure p. C5-695 G.S. Yuryev, E.A. Maximovskiy, Yu.M. Rumyantsev, N.I. Fainer and M.L. Kosinova DOI: https://doi.org/10.1051/jphyscol:1995583 PDF (183.2 KB)
Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions p. C5-699 T. Wierzchon and J.R. Sobiecki DOI: https://doi.org/10.1051/jphyscol:1995584 PDF (966.5 KB)
PE MOCVD of Thin High Transparent Dielectric Amorphous Films of Aluminium Oxide p. C5-705 V.P. Ovsyannikov, G.V. Lashkaryov and E.A. Mazurenko DOI: https://doi.org/10.1051/jphyscol:1995585 PDF (222.2 KB)
Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films p. C5-711 T.V. Tabenskaya, V.P. Ovsyannikov and E.A. Mazurenko DOI: https://doi.org/10.1051/jphyscol:1995586 PDF (194.5 KB)
Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD p. C5-719 C.I.M.A. Spee, J.P.A.M. Driessen and A.D. Kuypers DOI: https://doi.org/10.1051/jphyscol:1995587 PDF (843.1 KB)
Silicon and Boron Containing Components by CVD and CVI for High Temperature Ceramic Composites p. C5-735 L. Vandenbulke and M. Leparoux DOI: https://doi.org/10.1051/jphyscol:1995588 PDF (2.493 MB)
Murakami and H2SO4/H2O2 Pretreatment of WC-Co Hard Metal Substrates to Increase the Adhesion of CVD Diamond Coatings p. C5-753 R. Haubner, S. Kubelka, B. Lux, M. Griesser and M. Grasserbauer DOI: https://doi.org/10.1051/jphyscol:1995589 PDF (2.361 MB)
Deposition of Boron Nitride Films from BB'B"-Trichloroborazine p. C5-761 R. Stolle and G. Wahl DOI: https://doi.org/10.1051/jphyscol:1995590 PDF (1011 KB)
LPCVD Pyrocarbon Coating on Unidirectional Carbon Fiber Yarns : an Efficient Interphase for Aluminium Matrix Composites p. C5-769 P. Bertrand, M.H. Vidal-Setif and R. Mevrel DOI: https://doi.org/10.1051/jphyscol:1995591 PDF (1.259 MB)
Preparation of β-SiC Coatings Using 1,2-Dimethyldisilane as Precursor p. C5-777 X. Tang, R. Haubner, B. Lux, A. Zechmann and E. Hengge DOI: https://doi.org/10.1051/jphyscol:1995592 PDF (2.744 MB)
Chemical Vapour Deposition of AIN-Si3N4 Codeposits p. C5-785 F. Henry, B. Armas, C. Combescure, D. Thenegal and R. Flamand DOI: https://doi.org/10.1051/jphyscol:1995593 PDF (1.065 MB)
SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System p. C5-793 A. Bendeddouche, R. Berjoan, E. Bêche, S. Schamm, V. Serin, R. Carles and R. Hillel DOI: https://doi.org/10.1051/jphyscol:1995594 PDF (489.7 KB)
TiN-TixSiy Codeposits A.P.C.V.D. Produced Using the TiCl4-N2-SiH2Cl2-H2 System p. C5-801 G. Llauro, A. Bendeddouche, M. Nadal and R. Hillel DOI: https://doi.org/10.1051/jphyscol:1995595 PDF (336.8 KB)
Optimization of the Deposition Conditions of Titanium Nitride from Ammonia and Titanium Tetrachloride p. C5-809 M. Nadal and F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995596 PDF (729.5 KB)
Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM) p. C5-815 S.G. Andryushin and A.V. Kasatkin DOI: https://doi.org/10.1051/jphyscol:1995597 PDF (457.7 KB)
Heat-Resistance and Phase Composition of Ti-Si Coatings on Niobium p. C5-823 A.V. Kasatkin, S.U. Rybakov and G.M. Anurova DOI: https://doi.org/10.1051/jphyscol:1995598 PDF (613.8 KB)
Development of TiN-Si3N4 Nano Composite Coatings for Wear Resistance Applications p. C5-831 A.G. Dias, J.H. van Breda, P. Moretto and J. Ordelman DOI: https://doi.org/10.1051/jphyscol:1995599 PDF (497.5 KB)
Optical Properties of CVD-Deposited Dielectric Films for Microelectronic Devices p. C5-843 A. Sassella, A. Borghesi, S. Rojas and L. Zanotti DOI: https://doi.org/10.1051/jphyscol:19955100 PDF (780.2 KB)
Photoelectron Diffraction : a Structural Probe for Epitaxial Thin Films p. C5-861 G. Granozzi DOI: https://doi.org/10.1051/jphyscol:19955101 PDF (51.83 KB)
Characterization of Buffer Layers for SiC CVD p. C5-863 V. Cimalla, J. Pezoldt, G. Ecke, H. Rößler and G. Eichhorn DOI: https://doi.org/10.1051/jphyscol:19955102 PDF (952.3 KB)
Substrate Effects on the APCVD Growth of Titanium Nitride Films p. C5-871 S.E. Johnson and J.R. Owen DOI: https://doi.org/10.1051/jphyscol:19955103 PDF (1.371 MB)
Analysis of the Intermediate Layers Generated at the Film-Substrate Interface During the CVD Process of Diamond Synthesis p. C5-879 M.L. Terranova, V. Sessa, M. Rossi, G. Vitali, G. Cappuccio and C. Veroli DOI: https://doi.org/10.1051/jphyscol:19955104 PDF (2.438 MB)
Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers p. C5-887 D. Briand, M. Sarret, P. Duverneuil, T. Mohammed-Brahim and K. Kis-Sion DOI: https://doi.org/10.1051/jphyscol:19955105 PDF (346.8 KB)
Investigation of the Substrate/Epitaxial Interface of Si/Si1-xGex Layers Grown by LPCVD p. C5-895 R. Loo, L. Vescan, C. Dieker, D. Freundt, A. Hartmann and A. Mück DOI: https://doi.org/10.1051/jphyscol:19955106 PDF (1.417 MB)
Transmission Electron Microscopy Studies of (AIN-Si3N4) Codeposits Obtained by LPCVD p. C5-905 P. Marti, F. Henry, A. Mazel, B. Armas and J. Sevely DOI: https://doi.org/10.1051/jphyscol:19955107 PDF (2.548 MB)
Polycrystalline Silicon Characteristics Dependence on Starting Amorphous Material p. C5-913 T. Mohammed-Brahim, M. Sarret, D. Briand, K. Kis-Sion, O. Bonnaud and A. Hadjaj DOI: https://doi.org/10.1051/jphyscol:19955108 PDF (416.9 KB)
Oxygen Effect on the Stability of PECVD Boron-Carbon Films p. C5-921 S.Yu. Rybakov, V.M. Sharapov and L.E. Gavrilov DOI: https://doi.org/10.1051/jphyscol:19955109 PDF (214.2 KB)
HREM Characterization of Interfaces in Thin MOCVD Superconducting Films p. C5-927 D. Dorignac, S. Schamm, Ch. Grigis, J. Santiso, G. Garcia and A. Figueras DOI: https://doi.org/10.1051/jphyscol:19955110 PDF (4.922 MB)
Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films p. C5-937 M. Leskelä and M. Ritala DOI: https://doi.org/10.1051/jphyscol:19955111 PDF (771.4 KB)
Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride p. C5-953 W.F.A. Besling, P.J.J.M. van der Put and J. Schoonman DOI: https://doi.org/10.1051/jphyscol:19955112 PDF (1.829 MB)
Mass Flow Controlled Evaporation System p. C5-961 H.J. Boer DOI: https://doi.org/10.1051/jphyscol:19955113 PDF (1.871 MB)
Low Pressure CVD of Tungsten Carbides p. C5-967 P. Tägtström, H. Högberg, U. Jansson and J.-O. Carlsson DOI: https://doi.org/10.1051/jphyscol:19955114 PDF (907.1 KB)
Chemical Vapour Deposition for Optical Fibre Technology p. C5-975 L. Cognolato DOI: https://doi.org/10.1051/jphyscol:19955115 PDF (553.5 KB)
Diamond Deposition Using a Grid Filament p. C5-989 D.M. Li, T. Mäntylä and J. Levoska DOI: https://doi.org/10.1051/jphyscol:19955116 PDF (1.503 MB)
Deposition of Thick Layers, in a New CVD Reactor p. C5-997 H. Vergnes, E. Scheid, P. Duverneuil and J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:19955117 PDF (298.2 KB)
LPCVD SiO2 Layers Prepared from SiH4 and O2 at 450 °C in a Rapid Thermal Processing Reactor p. C5-1005 C. Cobianu, J.B. Rem, J.H. Klootwijk, M.H.H. Weusthof, J. Holleman and P.H. Woerlee DOI: https://doi.org/10.1051/jphyscol:19955118 PDF (339.4 KB)
Preparation of Ultrafine CVD WC Powders Deposited from WCl6 Gas Mixtures p. C5-1013 X. Tang, R. Haubner, B. Lux and B. Kieffer DOI: https://doi.org/10.1051/jphyscol:19955119 PDF (1.488 MB)
Atomic Layer Epitaxy Growth of AIN Thin Films p. C5-1021 K.-E. Elers, M. Ritala, M. Leskelä and L.-S. Johansson DOI: https://doi.org/10.1051/jphyscol:19955120 PDF (728.4 KB)
Thin Films of Zirconia-Phosphate Glasses Deposited by an Aerosol CVD Process p. C5-1029 J.L. Deschanvres, J.M. Vaca and J.C. Joubert DOI: https://doi.org/10.1051/jphyscol:19955121 PDF (260.4 KB)
OMCVD on Fluidized Divided Substrates : a Potential Method for the Preparation of Catalysts p. C5-1037 R. Feurer, A. Reynes, P. Serp, P. Kalck and R. Morancho DOI: https://doi.org/10.1051/jphyscol:19955122 PDF (265.7 KB)
Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4 p. C5-1045 S. Crottier-Combe, S. Audisio, J. Degauque, C. Beraud, F. Fiorillo, M. Baricco and J.L. Porteseil DOI: https://doi.org/10.1051/jphyscol:19955123 PDF (977.7 KB)
Growth Stability in Semiopen Physical Vapour Transport p. C5-1053 C. Paorici, M. Zha, L. Zanotti, L. Carotenuto and T. Tiberti DOI: https://doi.org/10.1051/jphyscol:19955124 PDF (1.389 MB)
Vapour Growth of Micro-Coiled Ceramic Fibers and their Properties p. C5-1061 S. Motojima, I. Hasegawa and H. Iwanaga DOI: https://doi.org/10.1051/jphyscol:19955125 PDF (1.736 MB)
Preparation of Onboard Reforming Catalyst for Methanol by Chemical Vapor Deposition p. C5-1069 M. Yano, K. Ohno and H. Imanaka DOI: https://doi.org/10.1051/jphyscol:19955126 PDF (265.4 KB)
Deposition of Oxide Layers by Computer Controlled"Injection-LPCVD" p. C5-1079 F. Felten, J.P. Senateur, F. Weiss, R. Madar and A. Abrutis DOI: https://doi.org/10.1051/jphyscol:19955127 PDF (1.388 MB)
Deposition and Study of Nobium Coating on Iron and Copper Substrates from Reduction of NbCl5 by Hydrogen or Vapors of Zinc p. C5-1087 S. Audisio, H. Hamed and D. Hertz DOI: https://doi.org/10.1051/jphyscol:19955128 PDF (1.179 MB)
Chemical Vapor Deposition of Hyperpure Polysilicon on Industrial Scale p. C5-1099 M. Domenici DOI: https://doi.org/10.1051/jphyscol:19955129 PDF (18.51 KB)
Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD p. C5-1101 J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura and Y. Sawada DOI: https://doi.org/10.1051/jphyscol:19955130 PDF (718.3 KB)
Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films p. C5-1109 P. Nagels, E. Sleeckx and R. Callaerts DOI: https://doi.org/10.1051/jphyscol:19955131 PDF (315.1 KB)
Delta Doping in Si and SiGe by LP(RT)CVD p. C5-1117 B. Tillack, J. Schlote, G. Ritter, D. Krüger, G. Morgenstern and P. Gaworzewski DOI: https://doi.org/10.1051/jphyscol:19955132 PDF (1.324 MB)
Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures p. C5-1125 P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli and C. Summonte DOI: https://doi.org/10.1051/jphyscol:19955133 PDF (302.3 KB)
Comparison Between CVD and ALE Produced TiO2 Cathodes in Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO Galvanic Cells p. C5-1133 A. Turkovic, A. Drasner, D. Sokcevic, M. Ritala, T. Asikainen and M. Leskelä DOI: https://doi.org/10.1051/jphyscol:19955134 PDF (264.1 KB)
Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics p. C5-1141 A.-M. Dutron, E. Blanquet, V. Ghetta, R. Madar and C. Bernard DOI: https://doi.org/10.1051/jphyscol:19955135 PDF (1.148 MB)
Amorphous Hydrogenated Silicon Nitride Deposited by Mercury Photosensitization Chemical Vapour Deposition for Optoelectronic Applications p. C5-1149 P. Pastorino, G. Morello and S. Tamagno DOI: https://doi.org/10.1051/jphyscol:19955136 PDF (1.393 MB)
Production and Characterization of Quantum Nanostructures of Epitaxial Semiconductors p. C5-1157 M. Berti, A.V. Drigo, M. Mazzer, A. Camporese, G. Torzo and G. Rossetto DOI: https://doi.org/10.1051/jphyscol:19955137 PDF (1.698 MB)
Low-Temperature Epitaxial Growth Mechanism of Si1-xGex Films in the Silane and Germane Reactions p. C5-1165 J. Murota, Y. Takasawa, H. Fujimoto, K. Goto, T. Matsuura and Y. Sawada DOI: https://doi.org/10.1051/jphyscol:19955138 PDF (374.5 KB)
Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE p. C5-1173 T. Nagatomo and O. Omoto DOI: https://doi.org/10.1051/jphyscol:19955139 PDF (298.0 KB)
