| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-1125 - C5-1132 | |
| DOI | https://doi.org/10.1051/jphyscol:19955133 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-1125-C5-1132
DOI: 10.1051/jphyscol:19955133
1 Elettrorava S.p.A., Via Don Sapino 176, 10040 Savonera, Torino, Italy
2 Dipartimento di Fisica, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy
3 LAMEL CNR, Via P. Gobetti 101, 40129 Bologna, Italy
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-1125-C5-1132
DOI: 10.1051/jphyscol:19955133
Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures
P. Rava1, G. Crovini2, F. Demichelis2, F. Giorgis2, R. Galloni3, R. Rizzoli3 and C. Summonte31 Elettrorava S.p.A., Via Don Sapino 176, 10040 Savonera, Torino, Italy
2 Dipartimento di Fisica, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy
3 LAMEL CNR, Via P. Gobetti 101, 40129 Bologna, Italy
Abstract
The effective dissipated power in SiH4-CH4-H2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH4 concentration and decreases with increasing H2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.
© EDP Sciences 1995