Morphology and Film Growth in CVD Reactions p. C5-3 V. Hlavacek, J.J. Thiart et D. Orlicki DOI: https://doi.org/10.1051/jphyscol:1995501 RésuméPDF (1.547 MB)
Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process p. C5-45 S. Berg et C. Nender DOI: https://doi.org/10.1051/jphyscol:1995502 RésuméPDF (342.3 KB)
Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy p. C5-55 L. Vescan, R. Loo, A. Souifi, C. Dieker et S. Wickenhäuser DOI: https://doi.org/10.1051/jphyscol:1995503 RésuméPDF (2.036 MB)
Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex p. C5-63 M. Pons, E. Blanquet, C. Bernard, H. Rouch, J.M. Dedulle et R. Madar DOI: https://doi.org/10.1051/jphyscol:1995504 RésuméPDF (323.0 KB)
Kinetic Modeling of the Gas Phase Decomposition of Germane by Computational Chemistry Techniques p. C5-71 M. Hierlemann, H. Simka, K.F. Jensen et M. Utz DOI: https://doi.org/10.1051/jphyscol:1995505 RésuméPDF (333.1 KB)
Thermodynamic Analysis of the Chemical Vapor Deposition of Phosphorus Nitride (P3N5) Thin Films p. C5-79 S. Eroglu DOI: https://doi.org/10.1051/jphyscol:1995506 RésuméPDF (328.9 KB)
Metal-Containing Thin Film MOCVD : Kinetics and Reaction Mechanisms p. C5-87 I. Fragalà DOI: https://doi.org/10.1051/jphyscol:1995507 RésuméPDF (51.25 KB)
Mass Spectrometric Study of the Gas Phase During Chemical Vapor Deposition of Pyrolytic Carbon p. C5-89 F. Fau-Canillac, F. Carrere, A. Reynes, C. Vahlas et F. Maury DOI: https://doi.org/10.1051/jphyscol:1995508 RésuméPDF (357.9 KB)
Monitoring of SiC Deposition in an Industrial CVI/CVD Reactor by In-Situ FTIR Spectroscopy p. C5-97 H. Mosebach, V. Hopfe, M. Erhard et M. Meyer DOI: https://doi.org/10.1051/jphyscol:1995509 RésuméPDF (910.6 KB)
Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor p. C5-105 F. Langlais, F. Loumagne, D. Lespiaux, S. Schamm et R. Naslain DOI: https://doi.org/10.1051/jphyscol:1995510 RésuméPDF (1.181 MB)
On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2 p. C5-113 J.B. Rem, J.H. Klootwijk, C. Cobianu, J. Holleman et J.F. Verweij DOI: https://doi.org/10.1051/jphyscol:1995511 RésuméPDF (826.7 KB)
Deposition of Platinum from Bis(Acetylacetonato)Platinum(II) p. C5-119 J. Arndt, L. Klippe, R. Stolle et G. Wahl DOI: https://doi.org/10.1051/jphyscol:1995512 RésuméPDF (1.286 MB)
Experimental Design Approach to Development of a CVD ZrN Coating p. C5-127 W.C. Russell DOI: https://doi.org/10.1051/jphyscol:1995513 RésuméPDF (547.5 KB)
Silicon Carbide Coating for Carbon Materials Produced by a Pack-Cementation Process p. C5-135 O. Paccaud et A. Derré DOI: https://doi.org/10.1051/jphyscol:1995514 RésuméPDF (2.253 MB)
Chemical Vapour Deposition of Thick Tungsten Coatings : Raman Measurements and Mass Transport Modelling p. C5-143 M. Pons, A. Benezech, P. Huguet, R. Gaufres, Ph. Diez et D. Lafforet DOI: https://doi.org/10.1051/jphyscol:1995515 RésuméPDF (295.2 KB)
Thermodynamic Simulation of YBa2Cu3O6+x Film Growth Using Aerosol MOCVD p. C5-151 F. Weiss, A. Pisch, C. Bernard et U. Schmatz DOI: https://doi.org/10.1051/jphyscol:1995516 RésuméPDF (354.3 KB)
Modelling Binary, Knudsen and Transition Regime Diffusion Inside Complex Porous Media p. C5-159 G.L. Vignoles DOI: https://doi.org/10.1051/jphyscol:1995517 RésuméPDF (1.469 MB)
Kinetics of Chemical Vapour Deposition of Boron Nitride from a Gas Mixture of Trimethylborazine, Ammonia, and Hydrogen at 900 to 1050 °C and 1 Bar Total Pressure p. C5-167 A. Jörg, D. Neuschütz et E. Zimmermann DOI: https://doi.org/10.1051/jphyscol:1995518 RésuméPDF (682.5 KB)
Parameters of Vacuum Process as the Factors Changing the Growth Kinetics of Chromized Layers Produced on Low-Carbon Iron Alloys by Means of CVD p. C5-175 E. Kasprzycka DOI: https://doi.org/10.1051/jphyscol:1995519 RésuméPDF (586.5 KB)
A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy p. C5-183 S.E. Alexandrov, A.Y. Kovalgin et D.M. Krasovitskiy DOI: https://doi.org/10.1051/jphyscol:1995520 RésuméPDF (385.5 KB)
Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour p. C5-191 A.F. Bykov, A.E. Turgambaeva, I.K. Igumenov et P.P. Semyannikov DOI: https://doi.org/10.1051/jphyscol:1995521 RésuméPDF (347.9 KB)
Thermodynamics Aspects of Chemical Vapour Deposition of V-VII Group Metals and their Alloys with Tungsten p. C5-199 Y.V. Lakhotkin DOI: https://doi.org/10.1051/jphyscol:1995522 RésuméPDF (238.2 KB)
Mechanism of Thermal Decomposition of Palladium β-Diketonates Vapour on Hot surface p. C5-205 P.P. Semyannikov, V.M. Grankin, I.K. Igumenov et A.F. Bykov DOI: https://doi.org/10.1051/jphyscol:1995523 RésuméPDF (343.7 KB)
Mechanism of Interaction of Dimethylgold(III) Chelates Vapour with Hot Surface p. C5-213 P.P. Semyannikov, V.M. Grankin, I.K. Igumenov et G.I. Zharkova DOI: https://doi.org/10.1051/jphyscol:1995524 RésuméPDF (353.4 KB)
Mass Spectrometric Study of Copper(II) β-Diketonates Vapour Thermolysis Mechanism and Kinetics p. C5-221 A.E. Turgambaeva, A.F. Bykov et I.K. Igumenov DOI: https://doi.org/10.1051/jphyscol:1995525 RésuméPDF (348.1 KB)
Deposition Kinetics of CVD-Silicon Carbonitride Coatings p. C5-229 A.G. Varliamov et S.V. Afanas'eva DOI: https://doi.org/10.1051/jphyscol:1995526 RésuméPDF (220.0 KB)
CVD as Laminar Phenomena with Homogeneous/Heterogeneous Appearances. A Theoretical Analysis p. C5-235 K.T. Raic DOI: https://doi.org/10.1051/jphyscol:1995527 RésuméPDF (333.3 KB)
Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor p. C5-245 H. Siimon et J. Aarik DOI: https://doi.org/10.1051/jphyscol:1995528 RésuméPDF (309.7 KB)
Simulation of Chemical Vapour Deposition of SiC from Methyltrichlorosilane in a Hot Wall Reactor p. C5-253 D. Neuschütz, M. Schierling et S. Zimdahl DOI: https://doi.org/10.1051/jphyscol:1995529 RésuméPDF (325.2 KB)
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors p. C5-261 M. Masi, S. Fogliani et S. Carrà DOI: https://doi.org/10.1051/jphyscol:1995530 RésuméPDF (775.7 KB)
Optimum Design of LPCVD Reactors p. C5-269 L.M. Zambov DOI: https://doi.org/10.1051/jphyscol:1995531 RésuméPDF (288.8 KB)
Reactivities of TaCl5 and H2O as Precursors for Atomic Layer Deposition p. C5-277 H. Siimon et J. Aarik DOI: https://doi.org/10.1051/jphyscol:1995532 RésuméPDF (240.3 KB)
Systematic Classification of LPCVD Processes p. C5-283 J. Schlote, K. Tittelbach-Helmrich, B. Tillack, B. Kuck et T. Hünlich DOI: https://doi.org/10.1051/jphyscol:1995533 RésuméPDF (363.8 KB)
Low Pressure CVD of Silicon Nitride from a Silane-Ammonia Mixture : Analysis of Preliminary Experimental and Simulation Results p. C5-291 K. Yacoubi, C. Azzaro et J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:1995534 RésuméPDF (392.5 KB)
Wall-Less Like Reactor : Simulation and Experimental Results p. C5-299 C. Bisch, Y.B. Wang et F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995535 RésuméPDF (1007 KB)
Reactor Modelling and Analysis of Amorphous Hydrogenated Silicon Deposition by PECVD p. C5-307 A. Djelloul, B. Despax, J.P. Couderc et P. Duverneuil DOI: https://doi.org/10.1051/jphyscol:1995536 RésuméPDF (866.6 KB)
SIPOS Deposition from Disilane : Experimental Study and Modelling p. C5-315 C. Cordier, E. Dehan, E. Scheid, P. Duverneuil et J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:1995537 RésuméPDF (382.9 KB)
Economical Analysis and Optimization of a Low Pressure Chemical Vapor Depositioni (LPCVD) Reactor p. C5-323 T. Tamani, P. Duverneuil et J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:1995538 RésuméPDF (294.3 KB)
Modelling of the Deposition of Molybdenum on Silicon from Molybdenum Hexafluoride and Hydrogen p. C5-331 E.N. Orij, M.H.J.M. de Croon et G.B. Marin DOI: https://doi.org/10.1051/jphyscol:1995539 RésuméPDF (833.4 KB)
Formation of Ti(OCN) Layers Under Glow Discharge Conditions p. C5-339 J.R. Sobiecki et T. Wierzchon DOI: https://doi.org/10.1051/jphyscol:1995540 RésuméPDF (1.613 MB)
Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors p. C5-347 A. Figueras DOI: https://doi.org/10.1051/jphyscol:1995541 RésuméPDF (424.0 KB)
A study by In Situ FTIR Spectroscopy of the Decomposition of Precursors for the MOCVD of High Temperature Superconductors p. C5-357 A.Y. Kovalgin, F. Chabert-Rocabois, M.L. Hitchman, S.H. Shamlian et S.E. Alexandrov DOI: https://doi.org/10.1051/jphyscol:1995542 RésuméPDF (317.4 KB)
High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD p. C5-365 C. Dubourdieu, J.P. Sénateur, O. Thomas et F. Weiss DOI: https://doi.org/10.1051/jphyscol:1995543 RésuméPDF (1.573 MB)
Barium Diketonates as Precursors for HTSC Thin Films : Structure and Properties p. C5-373 A. Drozdov et S. Troyanov DOI: https://doi.org/10.1051/jphyscol:1995544 RésuméPDF (156.2 KB)
Atomic Layer-by-Layer MOCVD of Oxide Superconductors p. C5-379 S. Oda, S. Yamamoto et A. Kawaguchi DOI: https://doi.org/10.1051/jphyscol:1995545 RésuméPDF (1.971 MB)
MOCVD Routes to Tl2Ba2Can-1CunO4+2nSuperconductor and Dielectric Insulator Thin Films p. C5-391 B.J. Hinds, D.B. Studebaker, J. Chen, R.J. McNeely, B. Han, J.L. Schindler, T.P. Hogan, C.R. Kannewurf et T.J. Marks DOI: https://doi.org/10.1051/jphyscol:1995546 RésuméPDF (1.296 MB)
MOCVD of High Quality YBa2Cu3O7-δ Thin Films Using Novel Fluorinated and Non-Fluorinated Precursors p. C5-407 B.C. Richads, S.L. Cook, D.L. Pinch et G.W. Andrews DOI: https://doi.org/10.1051/jphyscol:1995547 RésuméPDF (776.3 KB)
Compositional Effects on Morphology, Structure and Superconducting Properties of YxBay CuzO7-δ Thin Films Prepared by Metalorganic Chemical Vapour Deposition p. C5-415 M. Doudkowsky, J. Santiso, A. Figueras et R. Berjoan DOI: https://doi.org/10.1051/jphyscol:1995548 RésuméPDF (1.011 MB)
Growth of (YBaCuO)m/(PrBaCuO)n Superlattices by MOCVD p. C5-423 N. Didier, B. Chenevier, O. Thomas, J.P. Sénateur, F. Weiss et A. Gaskov DOI: https://doi.org/10.1051/jphyscol:1995549 RésuméPDF (893.1 KB)
Physico-Chemical Study of Barium (II) Dipivaloylmethanate Nature p. C5-431 N.E. Fedotova, I.K. Igumenov, V.I. Mamatyuk et G.V. Sidorenko DOI: https://doi.org/10.1051/jphyscol:1995550 RésuméPDF (330.0 KB)
Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film p. C5-439 G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, A. Figueras, S. Schamm, D. Dorignac, Ch. Grigis et M. Aguilò DOI: https://doi.org/10.1051/jphyscol:1995551 RésuméPDF (1.472 MB)
Recent Trends in the Selection of Metal-Organic Precursors for MOCVD Process p. C5-449 F. Maury DOI: https://doi.org/10.1051/jphyscol:1995552 RésuméPDF (836.5 KB)
Nickel Thin Films Grown by MOCVD Using Ni(dmg)2 as Precursor p. C5-465 M. Becht, J. Gallus, M. Hunziker, F. Atamny et K.-H. Dahmen DOI: https://doi.org/10.1051/jphyscol:1995553 RésuméPDF (291.4 KB)
Vanadium Oxi-Carbide Coatings Deposited by OMCVD in an Isothermal Reactor p. C5-473 L. Poirier et F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995554 RésuméPDF (1.160 MB)
Growth of InP in a Novel Remote-Plasma MOCVD Apparatus : an Approach to Improve Process and Material Properties p. C5-481 G. Bruno, P. Capezzuto et M. Losurdo DOI: https://doi.org/10.1051/jphyscol:1995555 RésuméPDF (347.9 KB)
MO CVD of Noble Metals p. C5-489 I.K. Igumenov DOI: https://doi.org/10.1051/jphyscol:1995556 RésuméPDF (358.3 KB)
Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings p. C5-497 A. Grafov, E. Mazurenko, G.A. Battiston et P. Zanella DOI: https://doi.org/10.1051/jphyscol:1995557 RésuméPDF (672.6 KB)
New Barium Volatile Complexes Useful in CVD p. C5-503 A. Drozdov, S. Troyanov, A. Pisarevsky et Y. Struchkov DOI: https://doi.org/10.1051/jphyscol:1995558 RésuméPDF (183.5 KB)
Deposition of MoO3 Films from a Volatile Molybdenyl Complex p. C5-509 B. Ballarin, E. Brescacin, G.A. Rizzi et E. Tondello DOI: https://doi.org/10.1051/jphyscol:1995559 RésuméPDF (1.065 MB)
CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design p. C5-517 J.-L. Mermet, M.-J. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau et F. Braud DOI: https://doi.org/10.1051/jphyscol:1995560 RésuméPDF (678.2 KB)
Chemical Vapor Deposition of ZrO2 Thin Films Using Zr(NEt2)4 as Precursor p. C5-525 A. Bastianini, G.A. Battiston, R. Gerbasi, M. Porchia et S. Daolio DOI: https://doi.org/10.1051/jphyscol:1995561 RésuméPDF (727.7 KB)
Properties of Thin Epitaxial Aerosol MOCVD CeO2 Films Grown on (1102) Sapphire p. C5-533 K. Fröhlich, J. Souc, D. Machajdík, A.P. Kobzev, F. Weiss, J.P. Senateur et K.H. Dahmen DOI: https://doi.org/10.1051/jphyscol:1995562 RésuméPDF (308.0 KB)
Structure and Destruction of a Precursor : Mass-Spectrometric Evaluation of Creation of Functional Films with Predeterminated Composition p. C5-541 A. Grafov, I.A. Grafova, E. Mazurenko, L.I. Koval, S. Catinella, P. Traldi, G.A. Battiston et P. Zanella DOI: https://doi.org/10.1051/jphyscol:1995563 RésuméPDF (357.3 KB)
Volatile Metals Coordination Compounds as Precursors for Functional Materials Synthesis by CVD-Method p. C5-547 E.A. Mazurenko et A.I. Gerasimchuk DOI: https://doi.org/10.1051/jphyscol:1995564 RésuméPDF (227.9 KB)
CVD Synthesis of HTSC Films Using Volatile Coordination Compounds p. C5-553 S.V. Volkov, V.Y. Zub, O.N. Balakshina et E.A. Mazurenko DOI: https://doi.org/10.1051/jphyscol:1995565 RésuméPDF (165.1 KB)
A New Route to the Deposition of Al2O3 by MOCVD p. C5-557 A.C. Jones, D.J. Houlton, S.A. Rushworth et G.W. Critchlow DOI: https://doi.org/10.1051/jphyscol:1995566 RésuméPDF (613.2 KB)
CVD Conference Recollections p. C5-563 J.M. Blocher Jr. DOI: https://doi.org/10.1051/jphyscol:1995567 RésuméPDF (23.72 KB)
Remote PECVD : a Route to Controllable Plasma Deposition p. C5-567 S.E. Alexandrov DOI: https://doi.org/10.1051/jphyscol:1995568 RésuméPDF (747.6 KB)
Plasma-Assisted Deposition at Atmospheric Pressure p. C5-583 J. Salge DOI: https://doi.org/10.1051/jphyscol:1995569 RésuméPDF (1.757 MB)
Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates p. C5-593 C. Tixier, P. Tristant, J. Desmaison et D. Merle DOI: https://doi.org/10.1051/jphyscol:1995570 RésuméPDF (337.0 KB)
Laser-CVD 3D Rapid Prototyping of Laser Driven Moveable Micro-Objects p. C5-601 O. Lehmann et M. Stuke DOI: https://doi.org/10.1051/jphyscol:1995571 RésuméPDF (1.111 MB)
Optical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition p. C5-607 M. Andrieux, J.M. Badie, C. Bisch, M. Ducarroir et F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995572 RésuméPDF (1.336 MB)
Deposition and Properties of Thin PECVD Carbon Films After Rapid Thermal Annealing p. C5-615 G. Beshkov, D. Dimitrov, S. Georgiev et T. Dimitrova DOI: https://doi.org/10.1051/jphyscol:1995573 RésuméPDF (152.7 KB)
Remote Microwave Plasma Enhanced Chemical Vapour Deposition of SiO2 Films : Oxygen Plasma Diagnostic p. C5-621 C. Regnier, J. Desmaison, P. Tristant et D. Merle DOI: https://doi.org/10.1051/jphyscol:1995574 RésuméPDF (819.0 KB)
Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate p. C5-629 D. Tonneau, R. Pierrisnard, H. Dallaporta et W. Marine DOI: https://doi.org/10.1051/jphyscol:1995575 RésuméPDF (867.9 KB)
Deposition of Boron Containing Coatings Using MO-PACVD Process to Protect Aluminium Casting Tools p. C5-637 K.-T. Rie, A. Gebauer et C. Pfohl DOI: https://doi.org/10.1051/jphyscol:1995576 RésuméPDF (1.637 MB)
Laser CVD vs. Hot Wall CVD : Coating of Fibres for Ceramic Composites p. C5-647 V. Hopfe, K. Brennfleck, R. Weiß, R. Meistring, K. Schönfeld, R. Jäckel, G. Dietrich et R. Goller DOI: https://doi.org/10.1051/jphyscol:1995577 RésuméPDF (2.098 MB)
Principles for Controlling the Electronic Quality of High-Rate Deposited a-Si:H Films p. C5-655 G. Suchaneck, T. Blum, S. Röhlecke et A. Kottwitz DOI: https://doi.org/10.1051/jphyscol:1995578 RésuméPDF (314.6 KB)
On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates p. C5-663 G. Bruno, M. Losurdo et P. Capezzuto DOI: https://doi.org/10.1051/jphyscol:1995579 RésuméPDF (347.9 KB)
Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition p. C5-671 H. Masumoto et T. Hirai DOI: https://doi.org/10.1051/jphyscol:1995580 RésuméPDF (233.7 KB)
A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm p. C5-679 I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D.C. Dumitras, S. Mulenko, A. Pogorelyi et A. Andrei DOI: https://doi.org/10.1051/jphyscol:1995581 RésuméPDF (1.033 MB)
Direct Deposition of Metal Film Patterns Using Nitrogen Laser p. C5-687 E.F. Reznikova, V.V. Chesnokov, G.I. Zharkova et I.K. Igumenov DOI: https://doi.org/10.1051/jphyscol:1995582 RésuméPDF (2.459 MB)
The Study of the Boron Nitride Thin Layer Structure p. C5-695 G.S. Yuryev, E.A. Maximovskiy, Yu.M. Rumyantsev, N.I. Fainer et M.L. Kosinova DOI: https://doi.org/10.1051/jphyscol:1995583 RésuméPDF (183.2 KB)
Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions p. C5-699 T. Wierzchon et J.R. Sobiecki DOI: https://doi.org/10.1051/jphyscol:1995584 RésuméPDF (966.5 KB)
PE MOCVD of Thin High Transparent Dielectric Amorphous Films of Aluminium Oxide p. C5-705 V.P. Ovsyannikov, G.V. Lashkaryov et E.A. Mazurenko DOI: https://doi.org/10.1051/jphyscol:1995585 RésuméPDF (222.2 KB)
Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films p. C5-711 T.V. Tabenskaya, V.P. Ovsyannikov et E.A. Mazurenko DOI: https://doi.org/10.1051/jphyscol:1995586 RésuméPDF (194.5 KB)
Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD p. C5-719 C.I.M.A. Spee, J.P.A.M. Driessen et A.D. Kuypers DOI: https://doi.org/10.1051/jphyscol:1995587 RésuméPDF (843.1 KB)
Silicon and Boron Containing Components by CVD and CVI for High Temperature Ceramic Composites p. C5-735 L. Vandenbulke et M. Leparoux DOI: https://doi.org/10.1051/jphyscol:1995588 RésuméPDF (2.493 MB)
Murakami and H2SO4/H2O2 Pretreatment of WC-Co Hard Metal Substrates to Increase the Adhesion of CVD Diamond Coatings p. C5-753 R. Haubner, S. Kubelka, B. Lux, M. Griesser et M. Grasserbauer DOI: https://doi.org/10.1051/jphyscol:1995589 RésuméPDF (2.361 MB)
Deposition of Boron Nitride Films from BB'B"-Trichloroborazine p. C5-761 R. Stolle et G. Wahl DOI: https://doi.org/10.1051/jphyscol:1995590 RésuméPDF (1011 KB)
LPCVD Pyrocarbon Coating on Unidirectional Carbon Fiber Yarns : an Efficient Interphase for Aluminium Matrix Composites p. C5-769 P. Bertrand, M.H. Vidal-Setif et R. Mevrel DOI: https://doi.org/10.1051/jphyscol:1995591 RésuméPDF (1.259 MB)
Preparation of β-SiC Coatings Using 1,2-Dimethyldisilane as Precursor p. C5-777 X. Tang, R. Haubner, B. Lux, A. Zechmann et E. Hengge DOI: https://doi.org/10.1051/jphyscol:1995592 RésuméPDF (2.744 MB)
Chemical Vapour Deposition of AIN-Si3N4 Codeposits p. C5-785 F. Henry, B. Armas, C. Combescure, D. Thenegal et R. Flamand DOI: https://doi.org/10.1051/jphyscol:1995593 RésuméPDF (1.065 MB)
SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System p. C5-793 A. Bendeddouche, R. Berjoan, E. Bêche, S. Schamm, V. Serin, R. Carles et R. Hillel DOI: https://doi.org/10.1051/jphyscol:1995594 RésuméPDF (489.7 KB)
TiN-TixSiy Codeposits A.P.C.V.D. Produced Using the TiCl4-N2-SiH2Cl2-H2 System p. C5-801 G. Llauro, A. Bendeddouche, M. Nadal et R. Hillel DOI: https://doi.org/10.1051/jphyscol:1995595 RésuméPDF (336.8 KB)
Optimization of the Deposition Conditions of Titanium Nitride from Ammonia and Titanium Tetrachloride p. C5-809 M. Nadal et F. Teyssandier DOI: https://doi.org/10.1051/jphyscol:1995596 RésuméPDF (729.5 KB)
Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM) p. C5-815 S.G. Andryushin et A.V. Kasatkin DOI: https://doi.org/10.1051/jphyscol:1995597 RésuméPDF (457.7 KB)
Heat-Resistance and Phase Composition of Ti-Si Coatings on Niobium p. C5-823 A.V. Kasatkin, S.U. Rybakov et G.M. Anurova DOI: https://doi.org/10.1051/jphyscol:1995598 RésuméPDF (613.8 KB)
Development of TiN-Si3N4 Nano Composite Coatings for Wear Resistance Applications p. C5-831 A.G. Dias, J.H. van Breda, P. Moretto et J. Ordelman DOI: https://doi.org/10.1051/jphyscol:1995599 RésuméPDF (497.5 KB)
Optical Properties of CVD-Deposited Dielectric Films for Microelectronic Devices p. C5-843 A. Sassella, A. Borghesi, S. Rojas et L. Zanotti DOI: https://doi.org/10.1051/jphyscol:19955100 RésuméPDF (780.2 KB)
Photoelectron Diffraction : a Structural Probe for Epitaxial Thin Films p. C5-861 G. Granozzi DOI: https://doi.org/10.1051/jphyscol:19955101 RésuméPDF (51.83 KB)
Characterization of Buffer Layers for SiC CVD p. C5-863 V. Cimalla, J. Pezoldt, G. Ecke, H. Rößler et G. Eichhorn DOI: https://doi.org/10.1051/jphyscol:19955102 RésuméPDF (952.3 KB)
Substrate Effects on the APCVD Growth of Titanium Nitride Films p. C5-871 S.E. Johnson et J.R. Owen DOI: https://doi.org/10.1051/jphyscol:19955103 RésuméPDF (1.371 MB)
Analysis of the Intermediate Layers Generated at the Film-Substrate Interface During the CVD Process of Diamond Synthesis p. C5-879 M.L. Terranova, V. Sessa, M. Rossi, G. Vitali, G. Cappuccio et C. Veroli DOI: https://doi.org/10.1051/jphyscol:19955104 RésuméPDF (2.438 MB)
Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers p. C5-887 D. Briand, M. Sarret, P. Duverneuil, T. Mohammed-Brahim et K. Kis-Sion DOI: https://doi.org/10.1051/jphyscol:19955105 RésuméPDF (346.8 KB)
Investigation of the Substrate/Epitaxial Interface of Si/Si1-xGex Layers Grown by LPCVD p. C5-895 R. Loo, L. Vescan, C. Dieker, D. Freundt, A. Hartmann et A. Mück DOI: https://doi.org/10.1051/jphyscol:19955106 RésuméPDF (1.417 MB)
Transmission Electron Microscopy Studies of (AIN-Si3N4) Codeposits Obtained by LPCVD p. C5-905 P. Marti, F. Henry, A. Mazel, B. Armas et J. Sevely DOI: https://doi.org/10.1051/jphyscol:19955107 RésuméPDF (2.548 MB)
Polycrystalline Silicon Characteristics Dependence on Starting Amorphous Material p. C5-913 T. Mohammed-Brahim, M. Sarret, D. Briand, K. Kis-Sion, O. Bonnaud et A. Hadjaj DOI: https://doi.org/10.1051/jphyscol:19955108 RésuméPDF (416.9 KB)
Oxygen Effect on the Stability of PECVD Boron-Carbon Films p. C5-921 S.Yu. Rybakov, V.M. Sharapov et L.E. Gavrilov DOI: https://doi.org/10.1051/jphyscol:19955109 RésuméPDF (214.2 KB)
HREM Characterization of Interfaces in Thin MOCVD Superconducting Films p. C5-927 D. Dorignac, S. Schamm, Ch. Grigis, J. Santiso, G. Garcia et A. Figueras DOI: https://doi.org/10.1051/jphyscol:19955110 RésuméPDF (4.922 MB)
Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films p. C5-937 M. Leskelä et M. Ritala DOI: https://doi.org/10.1051/jphyscol:19955111 RésuméPDF (771.4 KB)
Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride p. C5-953 W.F.A. Besling, P.J.J.M. van der Put et J. Schoonman DOI: https://doi.org/10.1051/jphyscol:19955112 RésuméPDF (1.829 MB)
Mass Flow Controlled Evaporation System p. C5-961 H.J. Boer DOI: https://doi.org/10.1051/jphyscol:19955113 RésuméPDF (1.871 MB)
Low Pressure CVD of Tungsten Carbides p. C5-967 P. Tägtström, H. Högberg, U. Jansson et J.-O. Carlsson DOI: https://doi.org/10.1051/jphyscol:19955114 RésuméPDF (907.1 KB)
Chemical Vapour Deposition for Optical Fibre Technology p. C5-975 L. Cognolato DOI: https://doi.org/10.1051/jphyscol:19955115 RésuméPDF (553.5 KB)
Diamond Deposition Using a Grid Filament p. C5-989 D.M. Li, T. Mäntylä et J. Levoska DOI: https://doi.org/10.1051/jphyscol:19955116 RésuméPDF (1.503 MB)
Deposition of Thick Layers, in a New CVD Reactor p. C5-997 H. Vergnes, E. Scheid, P. Duverneuil et J.P. Couderc DOI: https://doi.org/10.1051/jphyscol:19955117 RésuméPDF (298.2 KB)
LPCVD SiO2 Layers Prepared from SiH4 and O2 at 450 °C in a Rapid Thermal Processing Reactor p. C5-1005 C. Cobianu, J.B. Rem, J.H. Klootwijk, M.H.H. Weusthof, J. Holleman et P.H. Woerlee DOI: https://doi.org/10.1051/jphyscol:19955118 RésuméPDF (339.4 KB)
Preparation of Ultrafine CVD WC Powders Deposited from WCl6 Gas Mixtures p. C5-1013 X. Tang, R. Haubner, B. Lux et B. Kieffer DOI: https://doi.org/10.1051/jphyscol:19955119 RésuméPDF (1.488 MB)
Atomic Layer Epitaxy Growth of AIN Thin Films p. C5-1021 K.-E. Elers, M. Ritala, M. Leskelä et L.-S. Johansson DOI: https://doi.org/10.1051/jphyscol:19955120 RésuméPDF (728.4 KB)
Thin Films of Zirconia-Phosphate Glasses Deposited by an Aerosol CVD Process p. C5-1029 J.L. Deschanvres, J.M. Vaca et J.C. Joubert DOI: https://doi.org/10.1051/jphyscol:19955121 RésuméPDF (260.4 KB)
OMCVD on Fluidized Divided Substrates : a Potential Method for the Preparation of Catalysts p. C5-1037 R. Feurer, A. Reynes, P. Serp, P. Kalck et R. Morancho DOI: https://doi.org/10.1051/jphyscol:19955122 RésuméPDF (265.7 KB)
Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4 p. C5-1045 S. Crottier-Combe, S. Audisio, J. Degauque, C. Beraud, F. Fiorillo, M. Baricco et J.L. Porteseil DOI: https://doi.org/10.1051/jphyscol:19955123 RésuméPDF (977.7 KB)
Growth Stability in Semiopen Physical Vapour Transport p. C5-1053 C. Paorici, M. Zha, L. Zanotti, L. Carotenuto et T. Tiberti DOI: https://doi.org/10.1051/jphyscol:19955124 RésuméPDF (1.389 MB)
Vapour Growth of Micro-Coiled Ceramic Fibers and their Properties p. C5-1061 S. Motojima, I. Hasegawa et H. Iwanaga DOI: https://doi.org/10.1051/jphyscol:19955125 RésuméPDF (1.736 MB)
Preparation of Onboard Reforming Catalyst for Methanol by Chemical Vapor Deposition p. C5-1069 M. Yano, K. Ohno et H. Imanaka DOI: https://doi.org/10.1051/jphyscol:19955126 RésuméPDF (265.4 KB)
Deposition of Oxide Layers by Computer Controlled"Injection-LPCVD" p. C5-1079 F. Felten, J.P. Senateur, F. Weiss, R. Madar et A. Abrutis DOI: https://doi.org/10.1051/jphyscol:19955127 RésuméPDF (1.388 MB)
Deposition and Study of Nobium Coating on Iron and Copper Substrates from Reduction of NbCl5 by Hydrogen or Vapors of Zinc p. C5-1087 S. Audisio, H. Hamed et D. Hertz DOI: https://doi.org/10.1051/jphyscol:19955128 RésuméPDF (1.179 MB)
Chemical Vapor Deposition of Hyperpure Polysilicon on Industrial Scale p. C5-1099 M. Domenici DOI: https://doi.org/10.1051/jphyscol:19955129 RésuméPDF (18.51 KB)
Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD p. C5-1101 J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura et Y. Sawada DOI: https://doi.org/10.1051/jphyscol:19955130 RésuméPDF (718.3 KB)
Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films p. C5-1109 P. Nagels, E. Sleeckx et R. Callaerts DOI: https://doi.org/10.1051/jphyscol:19955131 RésuméPDF (315.1 KB)
Delta Doping in Si and SiGe by LP(RT)CVD p. C5-1117 B. Tillack, J. Schlote, G. Ritter, D. Krüger, G. Morgenstern et P. Gaworzewski DOI: https://doi.org/10.1051/jphyscol:19955132 RésuméPDF (1.324 MB)
Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures p. C5-1125 P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli et C. Summonte DOI: https://doi.org/10.1051/jphyscol:19955133 RésuméPDF (302.3 KB)
Comparison Between CVD and ALE Produced TiO2 Cathodes in Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO Galvanic Cells p. C5-1133 A. Turkovic, A. Drasner, D. Sokcevic, M. Ritala, T. Asikainen et M. Leskelä DOI: https://doi.org/10.1051/jphyscol:19955134 RésuméPDF (264.1 KB)
Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics p. C5-1141 A.-M. Dutron, E. Blanquet, V. Ghetta, R. Madar et C. Bernard DOI: https://doi.org/10.1051/jphyscol:19955135 RésuméPDF (1.148 MB)
Amorphous Hydrogenated Silicon Nitride Deposited by Mercury Photosensitization Chemical Vapour Deposition for Optoelectronic Applications p. C5-1149 P. Pastorino, G. Morello et S. Tamagno DOI: https://doi.org/10.1051/jphyscol:19955136 RésuméPDF (1.393 MB)
Production and Characterization of Quantum Nanostructures of Epitaxial Semiconductors p. C5-1157 M. Berti, A.V. Drigo, M. Mazzer, A. Camporese, G. Torzo et G. Rossetto DOI: https://doi.org/10.1051/jphyscol:19955137 RésuméPDF (1.698 MB)
Low-Temperature Epitaxial Growth Mechanism of Si1-xGex Films in the Silane and Germane Reactions p. C5-1165 J. Murota, Y. Takasawa, H. Fujimoto, K. Goto, T. Matsuura et Y. Sawada DOI: https://doi.org/10.1051/jphyscol:19955138 RésuméPDF (374.5 KB)
Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE p. C5-1173 T. Nagatomo et O. Omoto DOI: https://doi.org/10.1051/jphyscol:19955139 RésuméPDF (298.0 KB)