| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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| Page(s) | C5-671 - C5-677 | |
| DOI | https://doi.org/10.1051/jphyscol:1995580 | |
J. Phys. IV France 05 (1995) C5-671-C5-677
DOI: 10.1051/jphyscol:1995580
Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition
H. Masumoto and T. HiraiInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku Sendai, 980-77, Japan
Abstract
Bismuth titanate (Bi4Ti3O12 : BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi2O3 was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H7O)4] as a CVD source. The composition of films was controlled by changing RF power (PRF) of Bi2O3 target and Ti source temperature (TTi). The stoichiometric BIT film was prepared under the condition of PRF=500W, TTi=63°C, deposition temperature of 650°C and deposition rate of 14 nm/min. Epitaxial relationships between the BIT film and the substrate were determined MgO(100)//Pt(100)//BIT(001) and [MATH]. The remanent polarization and coercive field measured by a Sawyer and Tower bridge circuit at 50 Hz were 1.12 µC/cm2 and 46 kV/cm, respectively.
© EDP Sciences 1995