| Issue |
J. Phys. IV France
Volume 05, Number C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C5-113 - C5-118 | |
| DOI | https://doi.org/10.1051/jphyscol:1995511 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-113-C5-118
DOI: 10.1051/jphyscol:1995511
1 MESA Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
2 Institute of Microtechnology, P.O. Box 38-160, 72225 Bucharest, Romania
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-113-C5-118
DOI: 10.1051/jphyscol:1995511
On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2
J.B. Rem1, J.H. Klootwijk1, C. Cobianu2, J. Holleman1 and J.F. Verweij11 MESA Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
2 Institute of Microtechnology, P.O. Box 38-160, 72225 Bucharest, Romania
Abstract
An experimental study on the deposition kinetics of LPCVD SiO2 films at 450°C in a hot wall system from SiH4 and O2 in the range of very high O2 / SiH4 ratios (100-284) and very low SiH4 partial pressures (3.5-5.2 µbar) is presented. Unexpectedly, a low deposition rate of 1.8 nm/min with a thickness uniformity of less than 6 MAXMIN% on five simultaneously processed wafers is obtained. The results can be explained by a gas phase formation of precursors which dominate the deposition process. This process can be used for different device applications where thin SiO2 films are required, such as Thin Film Transistors and EEPROMs.
© EDP Sciences 1995