On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates

G. Bruno; M. Losurdo; P. Capezzuto

doi:doi:10.1051/jphyscol:1995579

Issue		J. Phys. IV France Volume 05, Number C5, Juin 1995 Proceedings of the Tenth European Conference on Chemical Vapour Deposition


Page(s)		C5-663 - C5-670
DOI		https://doi.org/10.1051/jphyscol:1995579

Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-663-C5-670
DOI: 10.1051/jphyscol:1995579

On the Use of H₂ Plasma for the Cleaning and Passivation of InP Substrates

G. Bruno, M. Losurdo and P. Capezzuto

Centro di Studio per la Chimica dei Plasmi-CNR, Dipartimento di Chimica-Università di Bari, via Orabona 4, 70126 Bari, Italy

Abstract
The effectiveness of hydrogen plasma for the reduction process of surface native oxide on InP substrates is investigated by X-ray photoelectron spectroscopy (XPS) and by phase modulated spectroscopic ellipsometry (PMSE). H2 plasmas, generated in a quartz tube by applying a r.f. field (13.56 MHz) to external electrodes, produce a very high H-atom flux (5-10₂₀ atoms/cm₂.sec) in the downstream region. The ex-situ XPS and in-situ PMSE measurements indicate that the native oxide layer (25 Å) is completely removed. The end point of the cleaning process is well detected by kinetic ellipsometry. The plasma treated surface shows a higher stability to reoxidation than that observed for wet etches samples.