Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film

G. Garcia; J. Casado; J. Llibre; M. Doudkowski; J. Santiso; A. Figueras; S. Schamm; D. Dorignac; Ch. Grigis; M. Aguilò

doi:doi:10.1051/jphyscol:1995551

Issue		J. Phys. IV France Volume 05, Number C5, Juin 1995 Proceedings of the Tenth European Conference on Chemical Vapour Deposition


Page(s)		C5-439 - C5-447
DOI		https://doi.org/10.1051/jphyscol:1995551

Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-439-C5-447
DOI: 10.1051/jphyscol:1995551

Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film

G. Garcia¹, J. Casado¹, J. Llibre¹, M. Doudkowski², J. Santiso², A. Figueras², S. Schamm³, D. Dorignac³, Ch. Grigis³ and M. Aguilò⁴

¹ S.E. Carburos Metàlicos, P° Zona Franca 14-20, 08038 Barcelona, Spain
² ICMAB/CSIC, Campus U.A.B., 08193 Bellaterra, Spain
³ CEMES-LOE/CNRS, 29 rue Jeanne Marvig, BP. 4347, 31055 Toulouse, France
⁴ Universitat Rovira i Virgili, Pl Imperial Tarraco, 43000 Tarragona, Spain

Abstract
YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO₂ amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an inplane texture defined by the following relationships : (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers.