Systematic Classification of LPCVD Processes

Abstract
A simple classification scheme of low pressure chemical vapor deposition processes is discussed which is based on only three different one-dimensional models of the radial film thickness distribution on silicon wafers processed in a conventional horizontal hot-wall reactor. Comparing theoretical predictions of these models with experimental results obtained from various LPCVD processes, a good qualitative agreement can be stated. For better quantitative accuracy additional effects must be taken into account. The stoichiometrically induced radial flow for deposition reactions not preserving the mole number of involved gaseous species is very important for the parameter evaluation as well as model identification.