Issue
J. Phys. IV France
Volume 05, Number C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-379 - C5-390
DOI https://doi.org/10.1051/jphyscol:1995545
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-379-C5-390

DOI: 10.1051/jphyscol:1995545

Atomic Layer-by-Layer MOCVD of Oxide Superconductors

S. Oda, S. Yamamoto and A. Kawaguchi

Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan


Abstract
A very smooth surface film of c-axis oriented YBa2Cu3Ox (YBCO) with roughness of less than monomolecular layer over 10µmx10µm, free of precipitates, has benne obtained by atomic layer-by-layer metalorganic chemical vapor deposition (MOCVD) on a SrTiO3 substrate at 650°C. A very large terrace length of 0.3-0.5µm may be due to the enhanced migration of growing species on the surface. The result of an attempt to prepare YBCO films with a larger terrace width surface using NdGaO3 substrates is discussed. The correlation between boulder formation and dislocations in the substrate is clarified and methods for eliminating boulders are proposed. Very high superconductivity critical current densities of 3x107A/cm2 at 4.2K and 3x106A/cm2 at 77K have been obtained.



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