A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

S.E. Alexandrov; A.Y. Kovalgin; D.M. Krasovitskiy

doi:doi:10.1051/jphyscol:1995520

Issue		J. Phys. IV France Volume 05, Number C5, Juin 1995 Proceedings of the Tenth European Conference on Chemical Vapour Deposition


Page(s)		C5-183 - C5-190
DOI		https://doi.org/10.1051/jphyscol:1995520

Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-183-C5-190
DOI: 10.1051/jphyscol:1995520

A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

S.E. Alexandrov, A.Y. Kovalgin and D.M. Krasovitskiy

Department of Electronic Materials Technology, Sr.-Petersburg State Technical University, Polytechnical Str. 29, St.-Petersburg, 195 251, Russia

Abstract
Direct "in situ" UV spectroscopic analysis of the gas phase was performed during chemical vapour deposition of gallium nitride films based on pyrolysis of GaCl₃NH₃ complexes. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.