| Issue |
J. Phys. IV France
Volume 05, Number C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C5-323 - C5-330 | |
| DOI | https://doi.org/10.1051/jphyscol:1995538 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-323-C5-330
DOI: 10.1051/jphyscol:1995538
Laboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC/INPT, 18 Chemin de la Loge, 31078 Toulouse cedex, France
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-323-C5-330
DOI: 10.1051/jphyscol:1995538
Economical Analysis and Optimization of a Low Pressure Chemical Vapor Depositioni (LPCVD) Reactor
T. Tamani, P. Duverneuil and J.P. CoudercLaboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC/INPT, 18 Chemin de la Loge, 31078 Toulouse cedex, France
Abstract
An economical analysis of the LPCVD hot wall tubular reactor functioning is presented including equipment amortization, clean room location, supplies, maintenance, labor, gas and energy consumption. From a technical point of view, CVD1 model is used to characterise the phenomena involved during polysilicon deposition, linking growth rate distribution to operating conditions. An optimization is then realized in three different cases with and without a temperature profile. By this study the main costs of CVD operation such as gases consumption and equipment amortization are identified, and the total cost has been drastically reduced by using a temperature profile.
© EDP Sciences 1995